公开(公告)号：US10276443B2

公开(公告)日：2019-04-30

申请号：US15445928

申请日：2017-02-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shin-Chi Chen ,  Chih-Chung Chen ,  An-Chi Liu ,  Chih-Yueh Li ,  Pei-Ching Yeh ,  Tsung-Chieh Yang

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/306 ,  H01L21/762 ,  H01L29/66 ,  H01L29/78

Abstract: A method of removing a fin structure includes providing a substrate. A fin structure extends from the substrate. A mask layer is disposed on a top surface of the fin structure. An organic dielectric layer covers the substrate, the fin structure and the mask layer. A first etching process is performed to entirely remove the mask layer by taking the organic dielectric layer as a mask. Then a second etching process is performed to remove the fin structure. The first etching process is preferably an anisotropic etching process, and the second etching process is an isotropic etching process.

公开(公告)号：US20180158903A1

公开(公告)日：2018-06-07

申请号：US15369895

申请日：2016-12-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsung-Chieh Yang

IPC: H01L29/06 ,  H01L21/306 ,  H01L21/762 ,  H01L21/308

CPC classification number: H01L29/0649 ,  H01L21/76232

Abstract: A method of fabricating an STI trench has a sidewall with two different slopes. The fabricating steps include providing a substrate with a patterned mask thereon. Then, a first trench is formed in the substrate by taking the patterned mask as a mask, wherein the first trench includes a first sidewall and a bottom. Later, a treatment process is performed to form a dielectric layer contacting the first sidewall and the bottom. Finally, after performing the treatment process, the dielectric layer on the bottom of the first trench is removed and the bottom of the first trench and the substrate are also removed to form a second trench by taking the patterned mask as a mask. The first trench and the second trench form the STI trench.

公开(公告)号：US20180226403A1

公开(公告)日：2018-08-09

申请号：US15445928

申请日：2017-02-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shin-Chi Chen ,  Chih-Chung Chen ,  An-Chi Liu ,  Chih-Yueh Li ,  Pei-Ching Yeh ,  Tsung-Chieh Yang

IPC: H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/306

CPC classification number: H01L27/0886 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/823431 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method of removing a fin structure includes providing a substrate. A fin structure extends from the substrate. A mask layer is disposed on a top surface of the fin structure. An organic dielectric layer covers the substrate, the fin structure and the mask layer. A first etching process is performed to entirely remove the mask layer by taking the organic dielectric layer as a mask. Then a second etching process is performed to remove the fin structure. The first etching process is preferably an anisotropic etching process, and the second etching process is an isotropic etching process.

公开(公告)号：US20190086809A1

公开(公告)日：2019-03-21

申请号：US15711864

申请日：2017-09-21

Applicant: United Microelectronics Corp.

Inventor： Tsung-Chieh Yang ,  Chin-Che Hsu

IPC: G03F7/42 ,  H01L21/306 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3213

Abstract: A method for cleaning masking material is provided. A sacrificial layer is patterned to form a masking material over a semiconductor structure. The method includes plasma striping a top surface of the masking material, and cleaning the masking material by a hot ammonia solution.