公开(公告)号：US20250079315A1

公开(公告)日：2025-03-06

申请号：US18677434

申请日：2024-05-29

Applicant: Winbond Electronics Corp.

Inventor： Jian-Ting CHEN ,  Yao-Ting TSAI ,  Bo-Lun WU ,  Sih-Han CHEN

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/528

Abstract: The method for forming the semiconductor structure includes the following steps. A substrate that is divided into a cell region and a peripheral region is provided. A bottom dielectric layer is formed on the substrate. A first stacked structure and a second stacked structure are formed on the bottom dielectric layer. The first stacked structure is disposed in the cell region and the second stacked structure is disposed in the peripheral region. The first stacked structure is patterned to form first conductive stacks. A first cleaning process is performed. A first repair dielectric layer is formed on the first conductive stacks, the second stacked structure, and the bottom dielectric layer. The second stacked structure is patterned to form second conductive stacks. A second cleaning process is performed. A second repair dielectric layer is formed on the first conductive stacks, the second conductive stacks, and the bottom dielectric layer.

公开(公告)号：US20190305110A1

公开(公告)日：2019-10-03

申请号：US16374162

申请日：2019-04-03

Applicant: Winbond Electronics Corp.

Inventor： Sih-Han CHEN ,  Chien-Ting CHEN ,  Yao-Ting TSAI ,  Hsiu-Han LIAO

IPC: H01L29/66 ,  H01L29/45 ,  H01L21/285

Abstract: A method for forming a self-aligned contact includes providing a substrate with a plurality of gate structures formed on the substrate. The method also includes forming a spacer liner on the gate structures and the substrate. The method also includes forming a sacrificial layer between the gate structures and on the gate structures. The method also includes forming a plurality of dielectric plugs through the sacrificial layer above the gate structures. The method also includes removing the sacrificial layer to form a plurality of contact openings between the gate structures. The method also includes forming an etch resistant layer conformally covering the sidewall and the bottom of the contact openings. The method also includes forming a plurality of contact plugs in the contact openings.