High-Temperature Thin-Film Strain Sensor

    公开(公告)号:US20240393196A1

    公开(公告)日:2024-11-28

    申请号:US18782000

    申请日:2024-07-23

    Abstract: The present disclosure relates to the field of strain sensors, and specifically relates to a high-temperature thin-film strain sensor, including a substrate and a strain-sensitive grid. The strain-sensitive grid includes an indium tin oxide layer and a platinum layer, the indium tin oxide layer is deposited on the substrate, and the platinum layer is deposited on the indium tin oxide layer. The indium tin oxide layer contains 50% by mass of indium oxide and 50% by mass of tin oxide. The high-temperature thin-film strain sensor provided by the present disclosure can be used in an environment from room temperature to 500° C., and have extremely high sensitivity at a high temperature of 500° C. Unlike the conventional metal foil strain gauge with a thickness of several microns, the high-temperature thin-film strain grid has a thickness of 500 nm, which can better convey the strain of the measured object at high temperature.

    Frequency detection method based on synchronous oscillation of resonators and tilt sensor using the frequency detection method

    公开(公告)号:US20190293421A1

    公开(公告)日:2019-09-26

    申请号:US16465576

    申请日:2017-12-29

    Abstract: A frequency detection method based on synchronous oscillation of resonators, and a tilt sensor using the frequency detection method are disclosed. The sensor includes a detecting unit and a synchronization unit which are respectively disposed in a first oscillating circuit and a second oscillating circuit for forming two self-excited oscillators. The detecting unit and the synchronization unit are electrostatically coupled through a plate capacitor to allow a weak synchronous current to pass through, which affects and reduces phase noise of the self-excited oscillator formed by the detecting unit, thereby greatly improving the frequency stability thereof and simultaneously reading out a natural frequency thereof through a frequency counter. Three detecting units are respectively evenly distributed at a periphery of a hexagonal mass block through magnifying beams. The mass block is configured to sense a gravitational acceleration. The gravitational acceleration is converted into a compressive or tension stress to be applied to the magnifying beams, and then the stress is amplified by the magnifying beams to be applied to the detecting units, so as to change a self-oscillation frequency of the detecting units for forming three synchronous self-oscillation circuits. Through the oscillation frequency and the oscillation frequency variation of the three synchronous self-oscillation circuits, the acceleration magnitude and direction of the entire sensor are deduced.

    Thin-film thermocouple probe and method of preparing same

    公开(公告)号:US11171276B2

    公开(公告)日:2021-11-09

    申请号:US17118504

    申请日:2020-12-10

    Abstract: A thin-film thermocouple probe includes a columnar substrate, a tungsten-26% rhenium film and an indium oxide (In2O3) film. A side surface of the columnar substrate is provided with a first straight groove and a second straight groove. The tungsten-26% rhenium film is arranged on a front end surface of the columnar substrate and in the first straight groove. The indium oxide film is arranged on the front end surface of the columnar substrate and in the second straight groove. The indium oxide film on the front end surface of the columnar substrate is connected to the tungsten-26% rhenium film on the front end surface of the columnar substrate. A first metal lead wire is connected to the tungsten-26% rhenium film, and a second metal lead wire is connected to the indium oxide film. A method of preparing the thin-film thermocouple probe is provided.

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