公开(公告)号：US20250157906A1

公开(公告)日：2025-05-15

申请号：US18399626

申请日：2023-12-28

Applicant: Yangtze Memory Technologies Co., Ltd.

Inventor： Hao ZHENG ,  Dongyu FAN ,  Tingting GAO ,  Lei LIU ,  Wenxi ZHOU ,  Zhiliang XIA

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/538 ,  H10B80/00

Abstract: Systems, devices, and methods for fabricating semiconductor structures for semiconductor packaging are provided. One example method includes forming a stack of conductive layers interleaved with isolating layers in a redistribution layer (RDL) structure of a semiconductor device. First contact structures and second contact structures are formed in the RDL structure, where each of the first contact structures extends through a portion of the conductive layers and the isolating layers and is connected to a pad on a first interface of the RDL structure, each of the second contact structures is connected to a respective one of the first contact structures through one of the conductive layers, and each of the second contact structures is connected to a pad on a second interface of the RDL structure opposite to the first interface.