公开(公告)号：US20210384219A1

公开(公告)日：2021-12-09

申请号：US17190601

申请日：2021-03-03

Applicant: Yangtze Memory Technologies Co., Ltd.

Inventor： Di WANG ,  Wenxi ZHOU ,  Zhiliang XIA ,  Yonggang YANG ,  Kun ZHANG ,  Hao ZHANG ,  Yiming AI

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11565 ,  H01L23/00

Abstract: Aspects of the disclosure provide a semiconductor device and a method for fabricating the same. The method for fabricating the semiconductor device can include forming a stack of alternating first insulating layers and first sacrificial layers over a semiconductor substrate, and forming a staircase in the stack having a plurality of steps, with at least a first step of the staircase including a first sacrificial layer of the first sacrificial layers over a first insulating layer of the first insulating layers. Further, the method can include forming a recess in the first sacrificial layer, forming a second sacrificial layer in the recess, and replacing a portion of the first sacrificial layer and the second sacrificial layer with a conductive material that forms a contact pad.