公开(公告)号：US11919036B1

公开(公告)日：2024-03-05

申请号：US18232090

申请日：2023-08-09

Applicant: Yield Engineering Systems, Inc.

Inventor： Kenneth Sautter

IPC: B05D1/00 ,  B05D3/10 ,  H05K3/38

CPC classification number: B05D1/60 ,  B05D3/102 ,  H05K3/386 ,  H05K3/389 ,  B05D2202/45 ,  B05D2518/00 ,  Y10T29/49155

Abstract: A method of improving the adhesion of a metal-organic interface in an electronic device includes providing a substrate with a metal structure, treating a surface of the metal structure to form a monolayer coating of a selected chemical composition on the surface, and coating the treated surface with an organic material.

公开(公告)号：US11850672B2

公开(公告)日：2023-12-26

申请号：US17872320

申请日：2022-07-25

Applicant: Yield Engineering Systems, Inc.

Inventor： Lei Jing ,  M Ziaul Karim ,  Kenneth Sautter ,  Kang Song

IPC: B23K1/015 ,  B23K1/008 ,  B23K3/08 ,  H01L23/00 ,  B23K101/42 ,  B23K101/40 ,  B23K1/012 ,  H01L21/60 ,  B23K1/00

CPC classification number: B23K1/015 ,  B23K1/008 ,  B23K3/085 ,  H01L24/742 ,  H01L24/75 ,  B23K1/0016 ,  B23K1/012 ,  B23K2101/40 ,  B23K2101/42 ,  H01L2021/60007 ,  H01L2021/6027 ,  H01L2021/60135 ,  H01L2224/75272 ,  H01L2224/75283

Abstract: A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

公开(公告)号：US20240066618A1

公开(公告)日：2024-02-29

申请号：US18387093

申请日：2023-11-06

Applicant: Yield Engineering Systems, Inc.

Inventor： Lei Jing ,  M Ziaul Karim ,  Kenneth Sautter ,  Kang Song

IPC: B23K1/015 ,  B23K1/008 ,  B23K3/08 ,  H01L23/00

CPC classification number: B23K1/015 ,  B23K1/008 ,  B23K3/085 ,  H01L24/742 ,  H01L24/75 ,  B23K2101/42

Abstract: A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

公开(公告)号：US20240357749A1

公开(公告)日：2024-10-24

申请号：US18232403

申请日：2023-08-10

Applicant: Yield Engineering Systems, Inc.

Inventor： Kenneth Sautter ,  Syndee Young ,  Charudatta Galande

IPC: H05K3/38 ,  H05K3/14 ,  H05K3/42

CPC classification number: H05K3/389 ,  H05K1/0353 ,  H05K3/146 ,  H05K3/382 ,  H05K3/386 ,  H05K3/42 ,  Y10T29/49155

Abstract: An electronic device having a substrate with a metal structure, a mono-layer coating of a selected silane composition on a surface of the metal structure, and an organic layer on the mono-layer coating, wherein the mono-layer coating improves the interfacial adhesion strength between the metal surface and the organic material.

公开(公告)号：US11818849B1

公开(公告)日：2023-11-14

申请号：US18137876

申请日：2023-04-21

Applicant: Yield Engineering Systems, Inc.

Inventor： Kenneth Sautter ,  Syndee Young ,  Charudatta Galande

IPC: H05K3/38 ,  H05K3/42 ,  H05K3/14

CPC classification number: H05K3/389 ,  H05K3/146 ,  H05K3/382 ,  H05K3/386 ,  H05K3/42 ,  Y10T29/49155

Abstract: A method of improving the adhesion of a metal-organic interface in an electronic device includes providing a substrate with a metal structure, depositing a mono-layer of a selected silane composition on a surface of the metal structure with a vapor of the selected silane composition, and coating the treated surface with an organic material.

公开(公告)号：US20230060603A1

公开(公告)日：2023-03-02

申请号：US17872320

申请日：2022-07-25

Applicant: Yield Engineering Systems, Inc.

Inventor： Lei Jing ,  M Ziaul Karim ,  Kenneth Sautter ,  Kang Song

IPC: B23K1/015 ,  H01L23/00 ,  B23K1/008 ,  B23K3/08

Abstract: A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

公开(公告)号：US11465225B1

公开(公告)日：2022-10-11

申请号：US17692760

申请日：2022-03-11

Applicant: Yield Engineering Systems, Inc.

Inventor： Lei Jing ,  M Ziaul Karim ,  Kenneth Sautter ,  Kang Song

IPC: B23K1/015 ,  B23K1/008 ,  B23K3/08 ,  H01L23/00 ,  B23K101/42 ,  B23K101/40 ,  B23K1/012 ,  H01L21/60 ,  B23K1/00

Abstract: A method of using a solder reflow oven can include disposing at least one substrate including solder in a chamber of the oven. The method can include decreasing a pressure of the chamber to a first pressure between about 0.1-50 Torr. After decreasing the pressure of the chamber, the temperature of the at least one substrate can be increased to a first temperature. Formic acid vapor can be admitted into the chamber above the at least one substrate while nitrogen is discharged into the chamber below the at least one substrate. The method can also include removing at least a portion of the formic acid vapor from the enclosure. After the removing step, the temperature of the at least one substrate can be further increased to a second temperature higher than the first temperature. The at least one substrate can be maintained at the second temperature for a first time. And then, the at least one substrate can be cooled.

公开(公告)号：US11456274B1

公开(公告)日：2022-09-27

申请号：US17686514

申请日：2022-03-04

Applicant: Yield Engineering Systems, Inc.

Inventor： M Ziaul Karim ,  Lei Jing ,  Kenneth Sautter

IPC: H01L23/00 ,  B23K1/008 ,  B23K37/04 ,  B23K101/40 ,  B23K101/42 ,  B23K1/015 ,  B23K1/012 ,  B23K1/00

Abstract: A method of using an oven includes supporting a substrate on a rotatable spindle in a processing chamber of the oven and rotating the substrate. The method may also include raising the spindle with the substrate to a heating zone and activating a lamp assembly to heat a top surface of the substrate. The substrate may then be lowered to a dosing zone and a chemical vapor directed into the processing chamber above the substrate. The substrate may then be further heated using the lamp assembly and cooled.