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    COATED CARBON NANOFLAKES
    2.
    发明申请
    COATED CARBON NANOFLAKES 审中-公开
    涂层碳纳米管

    公开(公告)号：US20110175038A1

    公开(公告)日：2011-07-21

    申请号：US12359435

    申请日：2009-01-26

    Applicant: Kun Hou ,  Dennis M. Manos ,  Ronald A. Outlaw

    Inventor： Kun Hou ,  Dennis M. Manos ,  Ronald A. Outlaw

    IPC: H01B1/04 ,  H01B1/02 ,  B05D5/12 ,  B05D3/10 ,  B82Y30/00 ,  B82Y40/00

    CPC classification number: C23C14/18 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/20 ,  C23C14/5806 ,  C23C14/5853 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30453 ,  H01J2201/30484 ,  H01J2201/30488 ,  H01J2201/30492 ,  H01J2201/30496

    Abstract: Compositions of carbon nanoflakes are coated with a low Z compound, where an effective electron emission of the carbon nanoflakes coated with the low Z compound is improved compared to an effective electron emission of the same carbon nanoflakes that are not coated with the low Z compound or of the low Z compound that is not coated onto the carbon nanoflakes. Compositions of chromium oxide and molybdenum carbide-coated carbon nanoflakes are also described, as well as applications of these compositions. Carbon nanoflakes are formed and a low Z compound coating, such as a chromium oxide or molybdenum carbide coating, is formed on the surfaces of carbon nanoflakes. The coated carbon nanoflakes have excellent field emission properties.

    Abstract translation: 碳纳米片的组合物涂覆有低Z化合物，其中涂覆有低Z化合物的碳纳米片的有效电子发射与未涂覆低Z化合物的相同碳纳米片的有效电子发射相比有所改善，或 的未涂覆在碳纳米片上的低Z化合物。 还描述了氧化铬和碳化钼包覆的碳纳米片的组成以及这些组合物的应用。 形成碳纳米片，并且在碳纳米片的表面上形成低Z化合物涂层，例如氧化铬或碳化钼涂层。 涂覆的碳纳米片具有优异的场致发射特性。

    Electron-emitting device, electron source, image display apparatus, and manufacturing method of electron-emitting device
    3.
    发明授权
    Electron-emitting device, electron source, image display apparatus, and manufacturing method of electron-emitting device 失效
    电子发射器件，电子源，图像显示装置和电子发射器件的制造方法

    公开(公告)号：US08075360B2

    公开(公告)日：2011-12-13

    申请号：US12253668

    申请日：2008-10-17

    Applicant: Yoji Teramoto ,  Ryoji Fujiwara ,  Michiyo Nishimura ,  Kazushi Nomura ,  Shunsuke Murakami

    Inventor： Yoji Teramoto ,  Ryoji Fujiwara ,  Michiyo Nishimura ,  Kazushi Nomura ,  Shunsuke Murakami

    IPC: H01J1/304 ,  H01J9/12

    CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30453 ,  H01J2329/0444

    Abstract: A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH3., C2H5., and C2H. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.

    Abstract translation: 一种电子发射器件的制造方法，包括以下步骤：预先制备设置有绝缘或半导体层的基底衬底，并将该层暴露于包含含有中性自由基的氢的气氛中。 优选绝缘或半导电层含有金属颗粒; 绝缘或半导体层是以碳为主要成分的膜; 含氢的中性基团含有H.，CH 3，C 2 H 5和C 2 H中的任何一种。 或其混合气体; 与大气中的带电粒子的密度相比，气氛中含有氢的中性基团的密度大于1000倍; 并且将绝缘或半导体层暴露于大气的步骤是通过使用具有偏置栅格的等离子体装置进行氢终止的步骤。

    ELECTRON-EMITTING DEVICE, ELECTRON SOURCE, IMAGE DISPLAY APPARATUS, AND MANUFACTURING METHOD OF ELECTRON-EMITTING DEVICE
    4.
    发明申请
    ELECTRON-EMITTING DEVICE, ELECTRON SOURCE, IMAGE DISPLAY APPARATUS, AND MANUFACTURING METHOD OF ELECTRON-EMITTING DEVICE 失效
    电子发射装置，电子源，图像显示装置和电子发射装置的制造方法

    公开(公告)号：US20090111350A1

    公开(公告)日：2009-04-30

    申请号：US12253668

    申请日：2008-10-17

    Applicant: Yoji Teramoto ,  Ryoji Fujiwara ,  Michiyo Nishimura ,  Kazushi Nomura ,  Shunsuke Murakami

    Inventor： Yoji Teramoto ,  Ryoji Fujiwara ,  Michiyo Nishimura ,  Kazushi Nomura ,  Shunsuke Murakami

    IPC: H01J9/12

    CPC classification number: H01J9/025 ,  H01J31/127 ,  H01J2201/30453 ,  H01J2329/0444

    Abstract: A manufacturing method of an electron-emitting device including the steps of: preparing a base substrate provided with an insulating or semi-conducting layer in advance and exposing the layer to an atmosphere which contains neutral radical containing hydrogen. It is preferable that the insulating or semi-conducting layer contains metal particles; the insulating or semi-conducting layer is a film containing carbon as a main component; the neutral radical containing hydrogen contains any of H., CH3., C2H5., and C2H. or mixture gas thereof; compared with a density of a charged particle in the atmosphere, a density of the neutral radical containing hydrogen in the atmosphere is more than 1,000 times; and a step of exposing the insulating or semi-conducting layer to the atmosphere is a step of making a hydrogen termination by using a plasma apparatus provided with a bias grid.

    Abstract translation: 一种电子发射器件的制造方法，包括以下步骤：预先制备设置有绝缘或半导体层的基底衬底，并将该层暴露于含有含有中性基团的氢的气氛中。 优选绝缘或半导电层含有金属颗粒; 绝缘或半导体层是以碳为主要成分的膜; 含氢的中性基团含有H.，CH 3，C 2 H 5和C 2 H中的任何一种。 或其混合气体; 与大气中的带电粒子的密度相比，气氛中含有氢的中性基团的密度大于1000倍; 并且将绝缘或半导体层暴露于大气的步骤是通过使用具有偏置栅格的等离子体装置进行氢终止的步骤。

    METHOD OF FABRICATING ELECTRON EMISSION SOURCE, ELECTRON EMISSION DEVICE, AND ELECTRON EMISSION DISPLAY DEVICE INCLUDING THE ELECTRON EMISSION DEVICE
    6.
    发明申请
    METHOD OF FABRICATING ELECTRON EMISSION SOURCE, ELECTRON EMISSION DEVICE, AND ELECTRON EMISSION DISPLAY DEVICE INCLUDING THE ELECTRON EMISSION DEVICE 审中-公开
    制造电子发射源的方法，电子发射装置和包括电子发射装置的电子发射显示装置

    公开(公告)号：US20080278062A1

    公开(公告)日：2008-11-13

    申请号：US11865208

    申请日：2007-10-01

    Applicant: Hee-Sung MOON ,  Jae-Myung KIM ,  Yoon-Jin KIM

    Inventor： Hee-Sung MOON ,  Jae-Myung KIM ,  Yoon-Jin KIM

    IPC: H01J1/62 ,  H01J9/02 ,  B05D5/12

    CPC classification number: H01J63/06 ,  H01J1/304 ,  H01J9/025 ,  H01J29/04 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/30453 ,  H01J2201/30484 ,  H01J2329/0444 ,  H01J2329/0465

    Abstract: A method is provided for fabricating an electron emission source which can attain improved electron emission efficiency and has simplified manufacturing processes. Also provided are an electron emission display device and an electron emission display device fabricated using the method of fabricating an electron emission source. The method includes forming an electrode, forming a carbide compound thin film on the electrode and forming a carbide-induced carbon thin film layer from the carbide compound thin film using an etching gas. The electron emission device and the electron emission display device each include a first electrode, a second electrode disposed to face the first electrode, and a carbide-induced carbon thin film layer formed to be electrically connected to f the first electrode or the second electrode.

    Abstract translation: 提供了一种用于制造能够获得改善的电子发射效率和简化制造工艺的电子发射源的方法。 还提供了使用制造电子发射源的方法制造的电子发射显示装置和电子发射显示装置。 该方法包括形成电极，在电极上形成碳化物化合物薄膜，并使用蚀刻气体从碳化物化合物薄膜形成碳化物诱导的碳薄膜层。 电子发射装置和电子发射显示装置各自包括第一电极，与第一电极相对设置的第二电极和形成为与第一电极或第二电极电连接的碳化物诱导碳薄膜层。

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