Invention Grant
- Patent Title: Method of mass transferring electronic device
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Application No.: US15680225Application Date: 2017-08-18
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Publication No.: US10177113B2Publication Date: 2019-01-08
- Inventor: Shao-Ying Ting , Yan-Ting Lan , Jing-En Huang , Yi-Ru Huang
- Applicant: Genesis Photonics Inc.
- Applicant Address: TW Tainan
- Assignee: Genesis Photonics Inc.
- Current Assignee: Genesis Photonics Inc.
- Current Assignee Address: TW Tainan
- Agency: JCIPRNET
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/78 ; H01L27/15 ; H01L33/06 ; H01L33/60 ; H01L23/00 ; H01L25/075 ; H01L33/62

Abstract:
A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion arc bonded to the carrying substrate. The sub-substrates of the blocks are removed. Another method of mass transferring electronic devices is also provided.
Public/Granted literature
- US20180053742A1 METHOD OF MASS TRANSFERRING ELECTRONIC DEVICE Public/Granted day:2018-02-22
Information query
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