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公开(公告)号：US11342488B2
公开(公告)日：2022-05-24
申请号：US16531148
申请日：2019-08-05
Applicant: Genesis Photonics Inc.
Inventor： Tung-Lin Chuang , Yi-Ru Huang , Yu-Chen Kuo , Yan-Ting Lan , Chih-Ming Shen , Jing-En Huang
Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.
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公开(公告)号：US20180053742A1
公开(公告)日：2018-02-22
申请号：US15680225
申请日：2017-08-18
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Yan-Ting Lan , Jing-En Huang , Yi-Ru Huang
IPC: H01L23/00 , H01L21/683 , H01L21/78 , H01L25/075 , H01L33/62
CPC classification number: H01L24/97 , H01L21/6836 , H01L21/78 , H01L24/81 , H01L24/83 , H01L25/0753 , H01L33/0095 , H01L33/38 , H01L33/62 , H01L2221/68336 , H01L2221/6834 , H01L2221/68354 , H01L2221/68363 , H01L2224/81203 , H01L2224/81805 , H01L2224/81815 , H01L2224/83851 , H01L2224/95001 , H01L2224/95136 , H01L2933/0066 , H01L2924/00014
Abstract: A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion arc bonded to the carrying substrate. The sub-substrates of the blocks are removed. Another method of mass transferring electronic devices is also provided.
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公开(公告)号：US20170062653A1
公开(公告)日：2017-03-02
申请号：US15255161
申请日：2016-09-02
Applicant: Genesis Photonics Inc.
Inventor： Tsung-Syun Huang , Jing-En Huang , Yu-Chen Kuo , Yan-Ting Lan , Kai-Shun Kang , Fei-Lung Lu , Teng-Hsien Lai , Yi-Ru Huang
CPC classification number: H01L33/06 , H01L33/145 , H01L33/20 , H01L33/38 , H01L2933/0016
Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.
Abstract translation: 提供了包括半导体外延层，第一电极和第二电极的发光二极管。 半导体外延层包括第一掺杂半导体层，第二掺杂半导体层和量子阱层。 在半导体外延层中形成凹部。 凹陷部分分离第二掺杂半导体层，量子阱层和第一掺杂半导体层的一部分，并在半导体外延层上限定第一区域和第二区域。 第一电极位于第一区域中，并且电连接至第一掺杂半导体层的至少一部分和第二掺杂半导体层的至少一部分。 第二电极位于第二区域中并电连接到第二掺杂半导体层。
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公开(公告)号：US20200220050A1
公开(公告)日：2020-07-09
申请号：US16705255
申请日：2019-12-06
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Kai-Shun Kang , Tung-Lin Chuang , Yu-Chen Kuo , Yan-Ting Lan , Chih-Ming Shen , Jing-En Huang
Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ≤10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.
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公开(公告)号：USD872701S1
公开(公告)日：2020-01-14
申请号：US29650986
申请日：2018-06-11
Applicant: GENESIS PHOTONICS INC.
Designer： Shao-Ying Ting , Yan-Ting Lan , Jing-En Huang , Yi-Ru Huang
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Patent Agency Ranking
公开(公告)号：US20190139932A1
公开(公告)日：2019-05-09
申请号：US16241947
申请日：2019-01-07
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Yan-Ting Lan , Jing-En Huang , Yi-Ru Huang
IPC: H01L23/00 , H01L33/62 , H01L21/78 , H01L33/00 , H01L21/683 , H01L25/075
Abstract: A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion are bonded to the carrying substrate. The sub-substrates of the blocks are removed. Another method of mass transferring electronic devices is also provided.
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公开(公告)号：US10134950B2
公开(公告)日：2018-11-20
申请号：US15680227
申请日：2017-08-18
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Yan-Ting Lan , Jing-En Huang , Yi-Ru Huang
Abstract: A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.
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公开(公告)号：US20180261727A1
公开(公告)日：2018-09-13
申请号：US15981855
申请日：2018-05-16
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
CPC classification number: H01L33/38 , H01L33/36 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/46 , H01L33/465 , H01L33/60
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
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公开(公告)号：US10734551B2
公开(公告)日：2020-08-04
申请号：US16659548
申请日：2019-10-21
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
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公开(公告)号：US20200075821A1
公开(公告)日：2020-03-05
申请号：US16531148
申请日：2019-08-05
Applicant: Genesis Photonics Inc.
Inventor： Tung-Lin Chuang , Yi-Ru Huang , Yu-Chen Kuo , Yan-Ting Lan , Chih-Ming Shen , Jing-En Huang
IPC: H01L33/60 , H01L33/36 , H01L33/62 , H01L33/14 , H01L25/075
Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.
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