Invention Grant
- Patent Title: Micro light emitting diode and manufacturing method thereof
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Application No.: US16195812Application Date: 2018-11-19
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Publication No.: US10580934B2Publication Date: 2020-03-03
- Inventor: Shao-Ying Ting , Yan-Ting Lan , Jing-En Huang , Yi-Ru Huang
- Applicant: Genesis Photonics Inc.
- Applicant Address: TW Tainan
- Assignee: Genesis Photonics Inc.
- Current Assignee: Genesis Photonics Inc.
- Current Assignee Address: TW Tainan
- Agency: JCIPRNET
- Main IPC: H01L33/08
- IPC: H01L33/08 ; H01L25/075 ; H01L27/15 ; H01L33/00 ; H01L33/20 ; H01L33/38 ; H01L33/44 ; H01L33/62 ; H01L33/06

Abstract:
A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.
Public/Granted literature
- US20190088819A1 MICRO LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-03-21
Information query
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