Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
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Application No.: US14558798Application Date: 2014-12-03
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Publication No.: US09324910B2Publication Date: 2016-04-26
- Inventor: Hsin-Hsien Wu , Chyi Shyuan Chern , Chun-Lin Chang , Ching-Wen Hsiao , Kuang-Huan Hsu
- Applicant: TSMC Solid State Lighting Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L33/22 ; H01L21/265 ; H01L33/32 ; H01L33/00 ; H01L33/06
Abstract:
A device includes: a substrate; and a doped III-V compound layer disposed over the substrate; wherein: the doped III-V compound layer includes an upper boundary; the upper boundary has a micro-roughened texture and a macro-roughened texture where the micro-roughened texture located on; and the upper boundary includes dopant ions that are not present in a remainder of the doped III-V compound layer underneath the upper boundary.
Public/Granted literature
- US20150083998A1 LIGHT EMITTING DIODE AND METHOD OF FABRICATION THEREOF Public/Granted day:2015-03-26
Information query
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