公开(公告)号：US09324910B2

公开(公告)日：2016-04-26

申请号：US14558798

申请日：2014-12-03

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Hsin-Hsien Wu ,  Chyi Shyuan Chern ,  Chun-Lin Chang ,  Ching-Wen Hsiao ,  Kuang-Huan Hsu

IPC: H01L29/06 ,  H01L33/22 ,  H01L21/265 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L21/2654 ,  H01L21/26546 ,  H01L21/26593 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/32

Abstract: A device includes: a substrate; and a doped III-V compound layer disposed over the substrate; wherein: the doped III-V compound layer includes an upper boundary; the upper boundary has a micro-roughened texture and a macro-roughened texture where the micro-roughened texture located on; and the upper boundary includes dopant ions that are not present in a remainder of the doped III-V compound layer underneath the upper boundary.

Abstract translation: 一种器件包括：衬底; 以及设置在所述衬底上的掺杂III-V化合物层; 其中：掺杂的III-V化合物层包括上边界; 上边界具有微粗糙纹理和位于其上的微粗糙纹理的宏观粗糙纹理; 并且上边界包括在上边界下方的掺杂III-V化合物层的剩余部分中不存在的掺杂离子。

公开(公告)号：US20150083998A1

公开(公告)日：2015-03-26

申请号：US14558798

申请日：2014-12-03

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Hsin-Hsien Wu ,  Chyi Shyuan Chern ,  Chun-Lin Chang ,  Ching-Wen Hsiao ,  Kuang-Huan Hsu

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/06 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L21/2654 ,  H01L21/26546 ,  H01L21/26593 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/32

Abstract: A light-emitting diode (LED) element includes a substrate and a GaN layer formed on the substrate. The GaN layer includes a boundary layer including a surface of the GaN opposing the substrate. The surface has a micro-roughening texture and a macro-roughening texture. The boundary layer includes at least one of As, Si, P, Ge, C, B, F, N, Sb, and Xe ions.

Abstract translation: 发光二极管（LED）元件包括衬底和形成在衬底上的GaN层。 GaN层包括边界层，其包括与衬底相对的GaN的表面。 表面具有微粗糙纹理和宏观粗糙纹理。 边界层包括As，Si，P，Ge，C，B，F，N，Sb和Xe离子中的至少一种。