公开(公告)号：US20140235053A1

公开(公告)日：2014-08-21

申请号：US14267303

申请日：2014-05-01

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Chyi Shyuan Chern ,  Hsin-Hsien Wu ,  Chun-Lin Chang ,  Hsing-Kuo Hsia ,  Hung-Yi Kuo

IPC: H01L21/768

CPC classification number: H01L21/76801 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/76898

Abstract: A method of forming a through-silicon-via (TSV) opening includes forming a TSV opening through a substrate. A recast of a material of the substrate on sidewalls of the TSV opening is removed with a first chemical. The sidewalls of the TSV opening are cleaned with a second chemical by substantially removing a residue of the first chemical.

Abstract translation: 形成贯通硅通孔（TSV）开口的方法包括通过基板形成TSV开口。 使用第一种化学物质去除在TSV开口的侧壁上的衬底的材料的重铸。 TSV开口的侧壁通过基本上除去第一种化学物质的残留物而用第二种化学品清洗。

公开(公告)号：US09324910B2

公开(公告)日：2016-04-26

申请号：US14558798

申请日：2014-12-03

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Hsin-Hsien Wu ,  Chyi Shyuan Chern ,  Chun-Lin Chang ,  Ching-Wen Hsiao ,  Kuang-Huan Hsu

IPC: H01L29/06 ,  H01L33/22 ,  H01L21/265 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L21/2654 ,  H01L21/26546 ,  H01L21/26593 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/32

Abstract: A device includes: a substrate; and a doped III-V compound layer disposed over the substrate; wherein: the doped III-V compound layer includes an upper boundary; the upper boundary has a micro-roughened texture and a macro-roughened texture where the micro-roughened texture located on; and the upper boundary includes dopant ions that are not present in a remainder of the doped III-V compound layer underneath the upper boundary.

Abstract translation: 一种器件包括：衬底; 以及设置在所述衬底上的掺杂III-V化合物层; 其中：掺杂的III-V化合物层包括上边界; 上边界具有微粗糙纹理和位于其上的微粗糙纹理的宏观粗糙纹理; 并且上边界包括在上边界下方的掺杂III-V化合物层的剩余部分中不存在的掺杂离子。

公开(公告)号：US20150083998A1

公开(公告)日：2015-03-26

申请号：US14558798

申请日：2014-12-03

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Hsin-Hsien Wu ,  Chyi Shyuan Chern ,  Chun-Lin Chang ,  Ching-Wen Hsiao ,  Kuang-Huan Hsu

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/06 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L21/2654 ,  H01L21/26546 ,  H01L21/26593 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/32

Abstract: A light-emitting diode (LED) element includes a substrate and a GaN layer formed on the substrate. The GaN layer includes a boundary layer including a surface of the GaN opposing the substrate. The surface has a micro-roughening texture and a macro-roughening texture. The boundary layer includes at least one of As, Si, P, Ge, C, B, F, N, Sb, and Xe ions.

Abstract translation: 发光二极管（LED）元件包括衬底和形成在衬底上的GaN层。 GaN层包括边界层，其包括与衬底相对的GaN的表面。 表面具有微粗糙纹理和宏观粗糙纹理。 边界层包括As，Si，P，Ge，C，B，F，N，Sb和Xe离子中的至少一种。

公开(公告)号：US09224636B2

公开(公告)日：2015-12-29

申请号：US14267303

申请日：2014-05-01

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Chyi Shyuan Chern ,  Hsin-Hsien Wu ,  Chun-Lin Chang ,  Hsing-Kuo Hsia ,  Hung-Yi Kuo

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/76801 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/76898

Abstract: A method includes forming an opening in a substrate, and the opening completely extends through the substrate. A recast material is formed on sidewalls of the substrate exposed by the opening. A first chemical is applied in the opening to remove the recast material, wherein a residue of the first chemical remains on portions of the sidewalls after the applying of the first chemical. Moreover, A second chemical is applied in the opening to remove the residue of the first chemical, and the second chemical is different from the first chemical.

Abstract translation: 一种方法包括在基板中形成开口，并且开口完全延伸穿过基板。 在由开口暴露的衬底的侧壁上形成重铸材料。 在开口中施加第一种化学品以去除重铸材料，其中在施加第一种化学品之后，第一种化学物质的残留物残留在侧壁的部分上。 此外，在开口中施加第二种化学物质以除去第一化学品的残余物，而第二种化学品与第一种化学品不同。