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公开(公告)号：KR1020110092693A
公开(公告)日：2011-08-18
申请号：KR1020100012262
申请日：2010-02-10
Applicant: 서울대학교산학협력단
Abstract: PURPOSE: A structure of electrode for minimizing oersted magnetic field is provided to perform accurate control of a device by controlling the oersted magnetic field which is generated in an electrode connection structure. CONSTITUTION: In a structure of electrode for minimizing oersted magnetic field, a device comprises a magnetic element(320) and an electrode(310). The electrode is faced with the magnetic element while being contacted with it. The oersted magnetic field is generated by a current flowing through an electrode. The size of the oersted magnetic field is larger than the magnetization change critical field of magnetic materials.
Abstract translation: 目的：提供用于使奥斯特磁场最小化的电极结构，通过控制在电极连接结构中产生的奥斯特磁场来对器件进行精确的控制。 构成：在用于最小化奥斯特磁场的电极的结构中，装置包括磁性元件（320）和电极（310）。 电极在与其接触的同时面对磁性元件。 奥斯特磁场由流过电极的电流产生。 奥斯特磁场的大小大于磁性材料的磁化变化临界场。
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公开(公告)号：KR100958551B1
公开(公告)日：2010-05-18
申请号：KR1020090068079
申请日：2009-07-24
Applicant: 서울대학교산학협력단
CPC classification number: C08J3/205 , C08J2323/10 , C08K3/346 , C08K2201/011 , C08L23/10 , Y10S977/783
Abstract: PURPOSE: A soundproofing material and a manufacturing method thereof are provided to use a PP resin for improving the soundproof property of the material, and to prevent the productivity degradation. CONSTITUTION: A manufacturing method of a soundproofing material comprises the following steps: forming a mixture by dissolving a PP resin and nanoclay into a solvent; and evaporating the solvent from the mixture. The formation process for the mixture is performed by mixing 2~10wt% of nanoclay for the total amount of the mixture. The mass ratio of the PP resin and the solvent is 1:3~1:5. The content rate of the solvent is under 0.5~2wt%.
Abstract translation: 目的：提供隔音材料及其制造方法，以使用PP树脂来改善材料的隔音性能，并且防止生产率降低。 构成：隔音材料的制造方法包括以下步骤：通过将PP树脂和纳米粘土溶解在溶剂中形成混合物; 并从混合物中蒸发溶剂。 混合物的形成过程是通过混合2〜10重量％的纳米粘土混合物的总量来进行的。 PP树脂和溶剂的质量比为1：3〜1：5。 溶剂含量为0.5〜2wt％。
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公开(公告)号：KR101209487B1
公开(公告)日：2012-12-07
申请号：KR1020100068136
申请日：2010-07-14
Applicant: 서울대학교산학협력단
IPC: H01L33/12
Abstract: 사파이어기판상에 GaN계반도체층을성장시킬때 열팽창계수의차로인해기판의휨 또는깨짐현상이발생하는것을방지하여우수한특성을갖는반도체발광소자를제조하기위한본 발명의일 측면에따른반도체발광소자의제조방법은, 사파이어기판; 상기사파이어기판의하면에형성된박막; 상기사파이어기판의상면상에형성된제1 GaN계반도체층; 상기제1 GaN계반도체층상에형성된활성층; 상기활성층상에형성된제2 GaN계반도체층; 상기활성층및 상기제2 GaN계반도체층이형성되지않은상기제1 GaN계반도체층상에형성된제1 전극; 및상기제2 GaN계반도체층상에형성된제2 전극을포함한다.
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公开(公告)号：KR1020120007394A
公开(公告)日：2012-01-20
申请号：KR1020100068136
申请日：2010-07-14
Applicant: 서울대학교산학협력단
IPC: H01L33/12
CPC classification number: H01L33/12 , H01L21/0242 , H01L33/0079 , H01L33/32
Abstract: PURPOSE: A semiconductor light emitting device and a method manufacturing thereof are provided to prevent the deformation of a sapphire substrate due to a difference in a thermal expansion coefficient by forming a thin film or a groove by using a material in which a thermal expansion coefficient is smaller than a sapphire in a lower part of a sapphire substrate. CONSTITUTION: A thin film(112) is formed in a lower part of a sapphire substrate(110). A first GaN system semiconductor layer(120) is formed on an upper part of the sapphire substrate. An active layer(130) is formed on the first GaN system semiconductor layer. A second GaN system semiconductor layer(140) is formed on the active layer. A first electrode(170) is formed on the first GaN system semiconductor layer in which the active layer and the second GaN system semiconductor layer are not formed. A second electrode(160) is formed on the second GaN system semiconductor layer.
Abstract translation: 目的：提供一种半导体发光器件及其制造方法，以通过使用热膨胀系数为1的材料形成薄膜或沟槽来防止由于热膨胀系数的差异而导致的蓝宝石衬底的变形 小于蓝宝石衬底下部的蓝宝石。 构成：在蓝宝石衬底（110）的下部形成薄膜（112）。 第一GaN系半导体层（120）形成在蓝宝石衬底的上部。 在第一GaN系半导体层上形成有源层（130）。 在有源层上形成第二GaN系半导体层（140）。 第一电极（170）形成在不形成有源层和第二GaN系半导体层的第一GaN系半导体层上。 第二电极（160）形成在第二GaN系半导体层上。
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公开(公告)号：KR1020110064701A
公开(公告)日：2011-06-15
申请号：KR1020090121407
申请日：2009-12-08
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: H01L29/786 , G02F1/136
CPC classification number: H01L29/78606 , H01L29/66969 , H01L29/7869 , H01L29/78696 , H01L27/1225 , H01L29/66742
Abstract: PURPOSE: A transistor and electronic device with the same are provided to prevent the degradation of a channel layer due to an external environment, thereby obtaining superior reliability. CONSTITUTION: A channel layer(C1) includes a Zn oxide. A source and a drain(D1) contact both ends of the channel layer respectively. A gate insulating layer insulates the channel layer from a gate. The channel layer includes a first side adjacent to a substrate and a second side facing the first side. A channel layer-protection area includes a fluoride group material on the second side.
Abstract translation: 目的：提供一种晶体管及其电子器件，以防止由于外部环境导致的沟道层的劣化，从而获得优异的可靠性。 构成：沟道层（C1）包括Zn氧化物。 源极和漏极（D1）分别与沟道层的两端接触。 栅极绝缘层将沟道层与栅极绝缘。 沟道层包括与衬底相邻的第一侧和面向第一侧的第二侧。 沟道层保护区域包括在第二侧上的氟化物基材料。
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Patent Agency Ranking
公开(公告)号：KR101635827B1
公开(公告)日：2016-07-04
申请号：KR1020090046080
申请日：2009-05-26
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: H01L21/8247 , H01L27/115 , G11C11/15 , B82Y40/00
CPC classification number: G11C11/161 , G11C11/1675
Abstract: 자구벽이동을이용한정보저장장치에관해개시되어있다. 개시된정보저장장치는자성트랙과상기자성트랙의자구벽을핀닝(pinning)시키기위한적어도하나의핀닝부재(pinning element)를포함할수 있다. 상기핀닝부재는상기자성트랙에상기자구벽을핀닝시키기위한자기장을인가하는요소일수 있고, 상기자기장의방향은상기자구벽의자화방향과동일할수 있다.
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公开(公告)号：KR101615636B1
公开(公告)日：2016-04-27
申请号：KR1020090121407
申请日：2009-12-08
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: H01L29/786 , G02F1/136
CPC classification number: H01L29/78606 , H01L29/66969 , H01L29/7869 , H01L29/78696
Abstract: 트랜지스터및 상기트랜지스터를포함한전자장치가개시된다. 상기트랜지스터는불소계물질을포함하는채널층-보호영역을포함한다.
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公开(公告)号：KR1020100039794A
公开(公告)日：2010-04-16
申请号：KR1020090046080
申请日：2009-05-26
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: H01L21/8247 , H01L27/115 , G11C11/15 , B82Y40/00
CPC classification number: G11C11/161 , G11C11/1675 , G11C11/15 , B82Y10/00 , G11B5/02 , H01L43/12
Abstract: PURPOSE: An information storage device using the movement of a magnetic domain wall is provided to obtain the information storage device with a large storage capacity without a rotating mechanical device using the movement principles of a magnetic domain and a magnetic domain wall. CONSTITUTION: A magnetic track(100) includes a plurality of magnetic domains(D1, D2) and a magnetic domain wall(DW1). A pinning material(200) is spaced apart from the magnetic track and pins the magnetic domain wall. The pining material applies magnetic field to the magnetic track in order to pin the magnetic domain wall. The direction of the magnetic field is identical to the magnetization direction of the magnetic domain wall. The pinning material is magnetic layer pattern.
Abstract translation: 目的：提供使用磁畴壁移动的信息存储装置，以便利用磁畴和磁畴壁的运动原理，不用旋转的机械装置来获得具有大存储容量的信息存储装置。 构成：磁道（100）包括多个磁畴（D1，D2）和磁畴壁（DW1）。 钉扎材料（200）与磁迹间隔开并且对磁畴壁进行引脚。 打浆材料将磁场施加到磁道以便将磁畴壁固定。 磁场的方向与磁畴壁的磁化方向相同。 钉扎材料是磁性层图案。
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公开(公告)号：KR101340458B1
公开(公告)日：2013-12-11
申请号：KR1020100108074
申请日：2010-11-02
Applicant: 서울대학교산학협력단
Abstract: 본 발명은 우수한 연골 재생 능력을 발휘하는 하이드로겔을 포함하는 연골 이식용 조성물 및 그 제조방법에 관한 것이다.
본 발명의 하이드로겔을 포함하는 연골 이식용 조성물은 최소한의 침습적 처치로 연골 결함 또는 손상 부위에 간편하게 적용될 수 있으며, 이식 후 활액막 조직의 침투 및 성장으로 연골의 재생이 효과적으로 일어나고 우수한 연골의 보호 효과를 발휘한다.-
公开(公告)号：KR1020100104413A
公开(公告)日：2010-09-29
申请号：KR1020090022811
申请日：2009-03-17
Applicant: 서울대학교산학협력단
IPC: G11C11/15 , H01L27/115
CPC classification number: G11C11/161 , G11C11/1675 , G11C11/15 , H01L27/228 , H01L43/08 , H01L43/12
Abstract: PURPOSE: A magnetic memory device is provided to improve magnetic domain moving efficiency by a current by maintaining vertical magnetism in a thick magnetic layer. CONSTITUTION: A magnetic memory device includes a non-magnetic layer(100a,100b), a first magnetic layer(110a,110b), and a second magnetic layer(120). A first magnetic layer is formed between nonmagnetic layers. A second magnetic layer is formed between the first magnetic layers. A saturated magnetization value of the second magnetic layer is below the saturated magnetization value of the first magnetic layer.
Abstract translation: 目的：提供一种磁存储器件，通过在厚磁层中维持垂直磁场，通过电流提高磁畴移动效率。 构成：磁存储器件包括非磁性层（100a，100b），第一磁性层（110a，110b）和第二磁性层（120）。 在非磁性层之间形成第一磁性层。 在第一磁性层之间形成第二磁性层。 第二磁性层的饱和磁化值低于第一磁性层的饱和磁化值。
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