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公开(公告)号：KR100816671B1
公开(公告)日：2008-03-27
申请号：KR1020060131214
申请日：2006-12-20
Applicant: 한국과학기술연구원
Abstract: A WSi2-SiC nanocomposite coating layer and a manufacturing method thereof are provided to improve anti-oxidation characteristic of the coating layer in the high temperature condition by preventing micro crack from being formed in the nanocomposite coating layer. A method for manufacturing a WSi2-SiC nanocomposite coating layer comprises steps of vapor-depositing tungsten and carbon on the surface of tungsten or tungsten alloy to form a W2C coating layer, and vapor-depositing silicon on the surface of the W2C coating layer to form the WSi2-(17-19.3) vol.% SiC nanocomposite coating layer. The carbon is subject to chemical deposition using one selected from the group consisting of CO, CH4, C2H4 and CH2I2, and simultaneously the tungsten is subject to chemical deposition using WF6, WCl6 or W(CO)6. The silicon is subject to chemical deposition using SiCl4, SiH2Cl2, SiH3Cl or SiH4.
Abstract translation: 提供WSi2-SiC纳米复合涂层及其制造方法，以通过防止在纳米复合涂层中形成微裂纹来提高涂层在高温条件下的抗氧化性能。 制备WSi2-SiC纳米复合涂层的方法包括在钨或钨合金表面上气相沉积钨和碳以形成W2C涂层的步骤，并在W2C涂层的表面上气相沉积硅以形成 WSi2-（17-19.3）体积％SiC纳米复合材料涂层。 使用选自CO，CH4，C2H4和CH2I2的一种碳进行化学沉积，同时使用WF6，WCl6或W（CO）6进行化学沉积。 使用SiCl 4，SiH 2 Cl 2，SiH 3 Cl或SiH 4进行化学沉积。
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Patent Agency Ranking
公开(公告)号：KR100822303B1
公开(公告)日：2008-04-16
申请号：KR1020060106528
申请日：2006-10-31
Applicant: 한국과학기술연구원
Abstract: A new TaSi2-Si3N4 nanocomposite coating layer formed on a surface of tantalum or tantalum alloys is provided to improve isothermal oxidation resistance and repeated oxidation resistance of the coating layer at high temperatures and improve mechanical properties of the coating layer at high temperatures, and a manufacturing method of the nanocomposite coating layer is provided. A manufacturing method of a TaSi2-Si3N4 nanocomposite coating layer comprises the steps of: (a) simultaneously vapor-depositing tantalum and nitrogen onto a surface of tantalum or tantalum alloys as a matrix to form a TaN coating layer on the surface of the matrix, and forming a Ta2N coating layer on the TaN coating layer; and (b) vapor-depositing silicon onto the surface of the tantalum nitride coating layer to form a TaSi2-(28.4-11.7) vol.% Si3N4 nanocomposite coating layer, wherein the nanocomposite coating layer is gradient structured such that the Si3N4 volume fraction of the nanocomposite coating layer is reduced as it goes from the matrix side to the surface side.
Abstract translation: 提供在钽或钽合金表面上形成的新的TaSi2-Si3N4纳米复合涂层，以提高涂层在高温下的等温抗氧化性和反复抗氧化性，并提高涂层在高温下的机械性能。 提供了纳米复合涂层的方法。 TaSi2-Si3N4纳米复合涂层的制造方法包括以下步骤：（a）将钽和氮同时气相沉积到钽或钽合金的表面上作为基体，以在基体的表面上形成TaN涂层， 并在TaN涂层上形成Ta2N涂层; 和（b）在氮化钽涂层的表面上气相沉积硅以形成TaSi 2（28.4-11.7）体积％Si 3 N 4纳米复合材料涂层，其中纳米复合涂层是梯度结构的，使得Si 3 N 4体积分数 当纳米复合涂层从基体侧流到表面侧时，纳米复合涂层被还原。
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公开(公告)号：KR102045989B1
公开(公告)日：2019-11-18
申请号：KR1020180029553
申请日：2018-03-14
Applicant: 한국과학기술연구원
IPC: H01L21/8238 , H01L29/10 , H01L21/02 , H01L29/165 , H01L21/324
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公开(公告)号：KR101843917B1
公开(公告)日：2018-03-30
申请号：KR1020160114295
申请日：2016-09-06
Applicant: 한국과학기술연구원
CPC classification number: H01L27/092 , H01L21/28291 , H01L21/823807 , H01L21/8252 , H01L27/0605 , H01L27/085 , H01L29/0895 , H01L29/36 , H01L29/66462 , H01L29/66984 , H01L29/7785 , H01L29/7786
Abstract: 일실시예는스핀궤도결합상수가상이한 2DEG(2-dimension electron gas, 2차원전자가스)와 2DHG(2-dimension hole gas, 2차원정공가스) 구조를채널층으로하는반도체소자를이용한상보성논리소자및 그제조방법을제공한다. 상보성논리소자는ⅰ) 기판, ⅱ) 기판위에위치하고, 제1 채널층과상기채널층에캐리어를공급하는전하공급층및 상기채널층의상하에각각배치된상부클래딩층및 하부클래딩층을포함하는제1 반도체소자, ⅲ) 기판위에위치하고, 제1 반도체소자와이격배치되고, 제2 채널층과상기채널층에캐리어를공급하는전하공급층및 상기채널층의상하에각각배치된상부클래딩층및 하부클래딩층을포함하는제2 반도체소자, ⅳ) 제1 반도체소자와제2 반도체소자위에위치하는강자성체로이루어진소스전극, ⅴ)제1 반도체소자와제2 반도체소자위에위치하고, 소스전극과이격형성된강자성체로이루어진드레인전극, 그리고ⅵ) 제1 반도체소자와제2 반도체소자위에위치하고, 소스전극과드레인전극사이에위치하여제1 채널층및 제2 채널층을통과하는전자의스핀을제어하도록적용된게이트전압이인가되는게이트전극을포함한다.
Abstract translation: 在一个实施例中，使用具有不同自旋轨道耦合常数的2DEG（2维电子气）和2维空穴气（2DHG）结构的半导体器件作为沟道层的互补逻辑器件 及其制造方法。 位于一基板，一第一沟道层和用于提供载流子到所述沟道层和包括分别设置在所述沟道层上形成上部包层的顶部和底部与下部包层的电荷供给层上的互补逻辑器件ⅰ）底物，ⅱ） Iii）设置在衬底上并与第一半导体元件间隔开的上覆层，上覆层设置在沟道层的上方和下方，用于将载流子供应到第二沟道层和沟道层的电荷供应层， 包括下覆层，ⅳ）第一半导体元件和由在所述半导体器件中的源极电极上形成的强磁性材料的第二，ⅴ）的第一半导体元件和位于第二半导体元件上，形成了源极电极和间隔开的一个第二半导体器件 施加由铁磁材料制成的漏电极，和ⅵ）位于所述第一半导体元件和第二半导体元件的上方，以控制被设置在源极和通过所述第一通道层的漏电极和第二沟道层之间的电子的自旋 栅极电压包括施加的栅电极。
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公开(公告)号：KR1020180027122A
公开(公告)日：2018-03-14
申请号：KR1020160114295
申请日：2016-09-06
Applicant: 한국과학기술연구원
CPC classification number: H01L27/092 , H01L21/28291 , H01L21/823807 , H01L21/8252 , H01L27/0605 , H01L27/085 , H01L29/0895 , H01L29/36 , H01L29/66462 , H01L29/66984 , H01L29/7785 , H01L29/7786 , H01L43/02 , G11C11/161 , H01L43/10 , H01L43/12
Abstract: 일실시예는스핀궤도결합상수가상이한 2DEG(2-dimension electron gas, 2차원전자가스)와 2DHG(2-dimension hole gas, 2차원정공가스) 구조를채널층으로하는반도체소자를이용한상보성논리소자및 그제조방법을제공한다. 상보성논리소자는ⅰ) 기판, ⅱ) 기판위에위치하고, 제1 채널층과상기채널층에캐리어를공급하는전하공급층및 상기채널층의상하에각각배치된상부클래딩층및 하부클래딩층을포함하는제1 반도체소자, ⅲ) 기판위에위치하고, 제1 반도체소자와이격배치되고, 제2 채널층과상기채널층에캐리어를공급하는전하공급층및 상기채널층의상하에각각배치된상부클래딩층및 하부클래딩층을포함하는제2 반도체소자, ⅳ) 제1 반도체소자와제2 반도체소자위에위치하는강자성체로이루어진소스전극, ⅴ)제1 반도체소자와제2 반도체소자위에위치하고, 소스전극과이격형성된강자성체로이루어진드레인전극, 그리고ⅵ) 제1 반도체소자와제2 반도체소자위에위치하고, 소스전극과드레인전극사이에위치하여제1 채널층및 제2 채널층을통과하는전자의스핀을제어하도록적용된게이트전압이인가되는게이트전극을포함한다.
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公开(公告)号：KR100822302B1
公开(公告)日：2008-04-16
申请号：KR1020060099989
申请日：2006-10-13
Applicant: 한국과학기술연구원
Abstract: A new TaSi2-SiC nanocomposite coating layer formed on a surface of tantalum or tantalum alloys is provided to improve isothermal oxidation resistance and repeated oxidation resistance of the coating layer at high temperatures and improve mechanical properties of the coating layer at high temperatures, and a manufacturing method of the nanocomposite coating layer is provided. A manufacturing method of a TaSi2-SiC nanocomposite coating layer comprises the steps of: (a) simultaneously vapor-depositing tantalum and carbon onto a surface of tantalum or tantalum alloys as a matrix to form a TaC coating layer on the surface of the matrix, and forming a Ta2C coating layer on the TaC coating layer; and (b) vapor-depositing silicon onto the surface of the tantalum carbide coating layer to form a TaSi2-(31.5-16) vol.% SiC nanocomposite coating layer, wherein the nanocomposite coating layer is gradient structured such that the SiC volume fraction of the nanocomposite coating layer is reduced as it goes from the matrix side to the surface side.
Abstract translation: 提供在钽或钽合金表面上形成的新的TaSi2-SiC纳米复合涂层，以提高涂层在高温下的等温抗氧化性和反复抗氧化性，并提高涂层在高温下的机械性能，以及制造 提供了纳米复合涂层的方法。 TaSi2-SiC纳米复合涂层的制造方法包括以下步骤：（a）将钽和碳同时气相沉积到钽或钽合金的表面上作为基体，以在基体的表面上形成TaC涂层， 在TaC涂层上形成Ta2C涂层; 和（b）将氧气沉积到碳化钽涂层的表面上以形成TaSi2-（31.5-16）体积％SiC纳米复合材料涂层，其中纳米复合涂层是梯度结构的，使得SiC体积分数 当纳米复合涂层从基体侧流到表面侧时，纳米复合涂层被还原。
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