公开(公告)号：WO2019161993A1

公开(公告)日：2019-08-29

申请号：PCT/EP2019/050766

申请日：2019-01-14

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  KEA, Marc, Jurian ,  ANUNCIADO, Roy

IPC: G03F7/20

Abstract: Described herein is a method for determining adjustment to a patterning process. The method includes obtaining a probability density function of a parameter related to a feature of a substrate subject to the patterning process based on measurements of the parameter, determining, by a hardware computer system, an asymmetry of the probability density function, and determining, by the hardware computer system, an adjustment to the patterning process based on the asymmetry of the probability density function of the parameter so as to reduce a probability of the feature having a parameter value that falls outside a range between threshold values of the parameter.

公开(公告)号：WO2019063206A1

公开(公告)日：2019-04-04

申请号：PCT/EP2018/072605

申请日：2018-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  MASLOW, Mark, John ,  VAN INGEN SCHENAU, Koenraad ,  WARNAAR, Patrick ,  SLACHTER, Abraham ,  ANUNCIADO, Roy ,  VAN GORP, Simon, Hendrik, Celine ,  STAALS, Frank ,  JOCHEMSEN, Marinus

IPC: G03F7/20

Abstract: Disclosed herein is a method for determining one or more control parameters of a manufacturing process comprising a lithographic process and one or more further processes, the method comprising: obtaining an image of at least part of a substrate, wherein the image comprises at least one feature manufactured on the substrate by the manufacturing process; calculating one or more image-related metrics in dependence on a contour determined from the image, wherein one of the image -related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or said one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

公开(公告)号：WO2022135890A1

公开(公告)日：2022-06-30

申请号：PCT/EP2021/084430

申请日：2021-12-06

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LAARHOVEN, Hendrik, Adriaan ,  VERMA, Alok ,  ANUNCIADO, Roy ,  DILLEN, Hermanus, Adrianus ,  VAN DER SANDEN, Stefan, Cornelis, Theodorus

IPC: G03F7/20 ,  H01L21/66

Abstract: Disclosed is a method of monitoring a semiconductor manufacturing process. The method comprises obtaining at least one first trained model being operable to derive local performance parameter data from high resolution metrology data, wherein said local performance parameter data describes a local component, or one or more local contributors thereto, of a performance metric and high resolution metrology data relating to at least one substrate having been subject to at least a part of said semiconductor manufacturing process. Local performance parameter data is determined from said high resolution metrology data using said first trained model. The first trained model is operable to determine said local performance parameter data as if it had been subject to an etch step on at least the immediately prior exposed layer, based on said high resolution metrology data comprising only metrology data performed prior to any such etch step.

公开(公告)号：WO2020099010A1

公开(公告)日：2020-05-22

申请号：PCT/EP2019/076048

申请日：2019-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： ANUNCIADO, Roy

IPC: G03F7/20

Abstract: Disclosed is a method for determining a contribution of a processing apparatus to a fingerprint of a parameter across a first substrate, the method comprising: obtaining a delta image which relates to the difference between a first pupil image associated with inspection of a first feature on the substrate and a second pupil image associated with inspection of a second feature on the substrate, wherein the first and second features have different dose sensitivities; determining a rate of change of the difference in response to a variation of a dose used to form said first and second features; selecting a plurality of pixels comprised within the delta image having a rate of change above a predetermined threshold; and determining the contribution using the determined rate of change and the delta image restricted to the plurality of pixels.

公开(公告)号：WO2017144379A1

公开(公告)日：2017-08-31

申请号：PCT/EP2017/053700

申请日：2017-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  STAALS, Frank ,  MASLOW, Mark, John ,  ANUNCIADO, Roy ,  JOCHEMSEN, Marinus ,  CRAMER, Hugo, Augustinus, Joseph ,  THEEUWES, Thomas ,  HINNEN, Paul, Christiaan

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70625

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

Abstract translation: 一种方法，包括：通过组合所述衬底上的所述第一变量的指纹和所述衬底的特定值来计算由图案化过程处理的衬底的图案的第一变量的值 第一个变量; 以及至少部分地基于所计算的第一变量的值来确定图案的第二变量的值。

公开(公告)号：EP4235305A1

公开(公告)日：2023-08-30

申请号：EP23171216.7

申请日：2018-08-22

Applicant: ASML Netherlands B.V.

Inventor： ANUNCIADO, Roy ,  JOCHEMSEN, Marinus ,  MASLOW, Mark, John ,  SLACHTER, Abraham ,  STAALS, Frank ,  TEL, Wim, Tjibbo ,  VAN GORP, Simon, Hendrik, Celine ,  VAN INGEN SCHENAU, Koenraad ,  WARNAAR, Patrick

IPC: G03F7/20

Abstract: Disclosed herein is a method for determining one or more control parameters of a manufacturing process comprising a lithographic process and one or more further processes, the method comprising: obtaining an image of at least part of a substrate, wherein the image comprises at least one feature manufactured on the substrate by the manufacturing process; calculating one or more image-related metrics in dependence on a contour determined from the image, wherein one of the image-related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or said one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.

公开(公告)号：EP4030236A1

公开(公告)日：2022-07-20

申请号：EP21152071.3

申请日：2021-01-18

Applicant: ASML Netherlands B.V.

Inventor： VAN LAARHOVEN, Hendrik Adriaan ,  VERMA, Alok ,  ANUNCIADO, Roy ,  DILLEN, Hermanus Adrianus ,  VAN DER SANDEN, Stefan Cornelis Theodorus

IPC: G03F7/20 ,  H01L21/66

Abstract: Disclosed is a method of monitoring a semiconductor manufacturing process. The method comprises obtaining at least one first trained model being operable to derive local performance parameter data from high resolution metrology data, wherein said local performance parameter data describes a local component, or one or more local contributors thereto, of a performance metric and high resolution metrology data relating to at least one substrate having been subject to at least a part of said semiconductor manufacturing process. Local performance parameter data is determined from said high resolution metrology data using said first trained model. The first trained model is operable to determine said local performance parameter data as if it had been subject to an etch step on at least the immediately prior exposed layer, based on said high resolution metrology data comprising only metrology data performed prior to any such etch step.

公开(公告)号：EP4361727A1

公开(公告)日：2024-05-01

申请号：EP22203387.0

申请日：2022-10-24

Applicant: ASML Netherlands B.V.

Inventor： ANUNCIADO, Roy ,  DZAFIC, Harun ,  RIDANE, Mohamed

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70683

Abstract: Disclosed is metrology method comprising: obtaining metrology data relating to a measurement of at least one target, each said at least one target comprising a plurality of features; said metrology data describing a placement error of one or more pairs of corresponding features of said at least one target, each one or more pairs of corresponding features comprising pairs of features which are substantially equidistant from a reference point on the target in a measurement direction of the target; determining an asymmetric component of said placement error from said metrology data; and determining a tilt parameter from said asymmetric component.

公开(公告)号：EP3531205A1

公开(公告)日：2019-08-28

申请号：EP18157999.6

申请日：2018-02-22

Applicant: ASML Netherlands B.V.

Inventor： TEL, Wim Tjibbo ,  KEA, Marc Jurian ,  ANUNCIADO, Roy

IPC: G03F7/20

Abstract: Described herein is a method for determining adjustment to a patterning process. The method includes obtaining a probability density function of a parameter related to a feature of a substrate subject to the patterning process based on measurements of the parameter, determining, by a hardware computer system, an asymmetry of the probability density function, and determining, by the hardware computer system, an adjustment to the patterning process based on the asymmetry of the probability density function of the parameter so as to reduce a probability of the feature having a parameter value that falls outside a range between threshold values of the parameter.

公开(公告)号：EP4261616A1

公开(公告)日：2023-10-18

申请号：EP22168094.5

申请日：2022-04-13

Applicant: ASML Netherlands B.V.

Inventor： SU, Jing ,  ZOU, Yi ,  VAN MIERLO, Willem, Louis ,  VAN DER STRATEN, Koen, Wilhelmus, Cornelis, Adrianus ,  CAO, Peigen ,  ENGBLOM, Peter, David ,  DILLEN, Hermanus, Adrianus ,  SLACHTER, Abraham ,  TEL, Wim, Tjibbo ,  NECHAEV, Konstantin, Sergeevich ,  ANUNCIADO, Roy

IPC: G03F7/20

Abstract: A method of grouping pattern features of a substantially irregular pattern layout for patterning a substrate in a lithographic process. The method comprises obtaining at least one substantially irregular pattern representation, each at least one substantially irregular pattern representation relating to a respective layer of interest; grouping a plurality of pattern features comprised within the substantially irregular pattern representation based on geometry and/or at least one processing attribute relating to processing performance into a plurality of groups, each group comprising a plurality of pattern features which are similar in terms of geometry and/or the at least one processing attribute; and deriving a parameter of interest associated with one or more groups of the plurality of groups.