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    SYSTEM AND METHOD FOR GENERATING PREDICTIVE IMAGES FOR WAFER INSPECTION USING MACHINE LEARNING
    1.
    发明申请
    SYSTEM AND METHOD FOR GENERATING PREDICTIVE IMAGES FOR WAFER INSPECTION USING MACHINE LEARNING 审中-公开

    公开(公告)号：WO2021052918A1

    公开(公告)日：2021-03-25

    申请号：PCT/EP2020/075675

    申请日：2020-09-14

    Applicant: ASML NETHERLANDS B.V.

    Inventor： PISARENCO, Maxim ,  MIDDLEBROOKS, Scott, Anderson ,  MASLOW, Mark, John ,  VAN LARE, Marie-Claire ,  BATISTAKIS, Chrysostomos

    IPC: G06T7/00 ,  G01N21/95 ,  G03F1/80 ,  G06N3/04

    Abstract: A system and method for generating predictive images for wafer inspection using machine learning are provided. Some embodiments of the system and method include acquiring the wafer after a photoresist applied to the wafer has been developed; imaging a portion of a segment of the developed wafer; acquiring the wafer after the wafer has been etched; imaging the segment of the etched wafer; training a machine learning model using the imaged portion of the developed wafer and the imaged segment of the etched wafer; and applying the trained machine learning model using the imaged segment of the etched wafer to generate predictive images of a developed wafer. Some embodiments include imaging a segment of the developed wafer; imaging a portion of the segment of the etched wafer; training a machine learning model; and applying the trained machine learning model to generate predictive after-etch images of the developed wafer.

    METHOD AND SYSTEM TO MONITOR A PROCESS APPARATUS
    3.
    发明申请
    METHOD AND SYSTEM TO MONITOR A PROCESS APPARATUS 审中-公开
    监视过程设备的方法和系统

    公开(公告)号：WO2018041513A1

    公开(公告)日：2018-03-08

    申请号：PCT/EP2017/069669

    申请日：2017-08-03

    Applicant: ASML NETHERLANDS B.V.

    Inventor： TEL, Wim, Tjibbo ,  MASLOW, Mark, John ,  STAALS, Frank ,  HINNEN, Paul, Christiaan

    IPC: G01N21/956 ,  G03F7/20

    Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more prelithography process apparatuses to the characteristic.

    Abstract translation: 涉及根据一个或多个处理设备的图案化处理，通过从基板的图案化处理中移除一个或多个处理设备对基板的特性所作出的贡献 衬底的特性，光刻设备对特性的贡献以及一个或多个预光刻处理设备对特性的贡献。

    PROCESS WINDOW TRACKING
    6.
    发明申请
    PROCESS WINDOW TRACKING 审中-公开
    过程窗口跟踪

    公开(公告)号：WO2016202559A1

    公开(公告)日：2016-12-22

    申请号：PCT/EP2016/062069

    申请日：2016-05-27

    Applicant: ASML NETHERLANDS B.V.

    Inventor： TEL, Wim, Tjibbo ,  STAALS, Frank ,  MASLOW, Mark, John

    IPC: G03F7/20

    CPC classification number: G03F7/70525 ,  G03F7/70891

    Abstract: Disclosed herein is a computer-implemented method for adjusting a lithography process, processing parameters of the lithography process comprising a first group of processing parameters and a second group of processing parameters, the method comprising: obtaining a change of the second group of processing parameters; determining a change of a sub-PW as a result of the change of the second group of processing parameters, wherein the sub-PW is spanned by only the first group of processing parameters; adjusting the first group of processing parameters based on the change of the sub-PW.

    Abstract translation: 本文公开了一种用于调整光刻工艺的计算机实现的方法，处理包括第一组处理参数和第二组处理参数的光刻工艺的参数，该方法包括：获得第二组处理参数的变化; 由于所述第二组处理参数的变化，确定所述子PW的改变，其中所述子PW仅由所述第一组处理参数跨越; 根据子PW的变化调整第一组处理参数。

    METHOD OF DETERMINING CONTROL PARAMETERS OF A DEVICE MANUFACTURING PROCESS
    9.
    发明公开
    METHOD OF DETERMINING CONTROL PARAMETERS OF A DEVICE MANUFACTURING PROCESS 审中-公开

    公开(公告)号：EP3462240A1

    公开(公告)日：2019-04-03

    申请号：EP17193430.0

    申请日：2017-09-27

    Applicant: ASML Netherlands B.V.

    Inventor： TEL, Wim, Tjibbo ,  WARNAAR, Patrick ,  MASLOW, Mark, John ,  SLACHTER, Abraham ,  VAN INGEN SCHENAU, Koenraad

    IPC: G03F7/20

    Abstract: Disclosed herein is a method in the manufacturing process of a device on a substrate, wherein the manufacturing process comprises a lithographic process of imaging a portion of a design layout onto the substrate using a lithographic apparatus and one or more further processes in the manufacturing process of the device, the method comprising: obtaining an image of at least part of the substrate, wherein the image comprises at least one feature comprised by the device being manufactured on the substrate; calculating one or more image-related metrics in dependence on a contour determined from the image comprising the at least one feature; determining one or more control parameters of the lithographic apparatus and/or said one or more further processes in the manufacturing process of the device in dependence on the one or more image-related metrics. Advantageously, the determination of the control parameters is improved.

    METHOD FOR DETERMINING DEFECTIVENESS OF PATTERN BASED ON AFTER DEVELOPMENT IMAGE
    10.
    发明公开
    METHOD FOR DETERMINING DEFECTIVENESS OF PATTERN BASED ON AFTER DEVELOPMENT IMAGE 审中-公开

    公开(公告)号：EP3789826A1

    公开(公告)日：2021-03-10

    申请号：EP19195527.7

    申请日：2019-09-05

    Applicant: ASML Netherlands B.V.

    Inventor： KOOIMAN, Marleen ,  PISARENCO, Maxim ,  SLACHTER, Abraham ,  MASLOW, Mark, John

    IPC: G03F7/20 ,  H01L21/02

    Abstract: Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.

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