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    CONTROL BASED ON PROBABILITY DENSITY FUNCTION OF PARAMETER
    1.
    发明申请
    CONTROL BASED ON PROBABILITY DENSITY FUNCTION OF PARAMETER 审中-公开

    公开(公告)号：WO2019161993A1

    公开(公告)日：2019-08-29

    申请号：PCT/EP2019/050766

    申请日：2019-01-14

    Applicant: ASML NETHERLANDS B.V.

    Inventor： TEL, Wim, Tjibbo ,  KEA, Marc, Jurian ,  ANUNCIADO, Roy

    IPC: G03F7/20

    Abstract: Described herein is a method for determining adjustment to a patterning process. The method includes obtaining a probability density function of a parameter related to a feature of a substrate subject to the patterning process based on measurements of the parameter, determining, by a hardware computer system, an asymmetry of the probability density function, and determining, by the hardware computer system, an adjustment to the patterning process based on the asymmetry of the probability density function of the parameter so as to reduce a probability of the feature having a parameter value that falls outside a range between threshold values of the parameter.

    TOPOLOGY-BASED IMAGE RENDERING IN CHARGED-PARTICLE BEAM INSPECTION SYSTEMS
    2.
    发明申请
    TOPOLOGY-BASED IMAGE RENDERING IN CHARGED-PARTICLE BEAM INSPECTION SYSTEMS 审中-公开

    公开(公告)号：WO2022128374A1

    公开(公告)日：2022-06-23

    申请号：PCT/EP2021/082773

    申请日：2021-11-24

    Applicant: ASML NETHERLANDS B.V.

    Inventor： LIANG, Haoyi ,  MA, Bing ,  CHEN, Zhichao ,  KEA, Marc, Jurian

    IPC: G03F7/20 ,  G01N21/956 ,  G06T7/00 ,  G06V10/24

    Abstract: Systems and methods of image alignment are disclosed herein. The method of image alignment may comprise obtaining an image of a sample, obtaining information associated with a corresponding reference image, generating a modified rendered image by blurring a rendered image of the corresponding reference image such that a topology of the rendered image is substantially preserved, wherein a degree of blurring is based on a characteristic of the topology, and aligning the image of the sample with the blurred rendered image. The method may further comprise aligning the image of the sample with the corresponding reference image based on an alignment between the image of the sample and the blurred rendered image.

    INSPECTION METHODS, SUBSTRATES HAVING METROLOGY TARGETS, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD
    4.
    发明申请
    INSPECTION METHODS, SUBSTRATES HAVING METROLOGY TARGETS, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD 审中-公开
    检查方法，具有计量学目标的基板，光刻系统和器件制造方法

    公开(公告)号：WO2015090838A1

    公开(公告)日：2015-06-25

    申请号：PCT/EP2014/075165

    申请日：2014-11-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： NOOITGEDAGT, Tjitte ,  KEA, Marc, Jurian

    IPC: G03F7/20

    CPC classification number: G03F7/70625 ,  G03F7/70466 ,  G03F7/70633 ,  G03F7/70683

    Abstract: Disclosed is a method of measuring overlay between upper and lower layers on a substrate using metrology targets formed by a lithographic process. The lithographic process is of a multiple-patterning type whereby first and second distinct populations of structures are formed in a single one of said layers (L1) by respective first and second patterning steps. The metrology target (620) in the single one of said layers comprises a set of structures of which different subsets (642A, 642B) are formed in said first and second patterning steps. An overlay measurement on this target can be used to calculate a combined (average) overlay performance parameter for both of the first and second patterning steps.

    Abstract translation: 公开了一种使用由光刻工艺形成的测量目标来测量衬底上的上层和下层之间的覆盖层的方法。 光刻工艺是多重图案化形式，其中通过相应的第一和第二图案形成步骤，通过第一和第二不同的结构群体形成在单个所述层（L1）中。 所述层中的一个中的测量目标（620）包括在所述第一和第二图案化步骤中形成不同子集（642A，642B）的一组结构。 可以使用该目标上的覆盖测量来计算第一和第二图案化步骤两者的组合（平均）叠加性能参数。

    DEFECT PREDICTION
    6.
    发明申请
    DEFECT PREDICTION 审中-公开

    公开(公告)号：WO2019011604A1

    公开(公告)日：2019-01-17

    申请号：PCT/EP2018/066394

    申请日：2018-06-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： CHEONG, Lin, Lee ,  LA FONTAINE, Bruno ,  KEA, Marc, Jurian ,  YUDHISTIRA, Yasri ,  GENIN, Maxime, Philippe, Frederic

    IPC: G03F7/20

    Abstract: A method including obtaining verified values of a characteristic of a plurality of patterns on a substrate produced by a device manufacturing process; obtaining computed values of the characteristic using a non-probabilistic model; obtaining values of a residue of the non-probabilistic model based on the verified values and the computed values; and obtaining an attribute of a distribution of the residue based on the values of the residue. Also disclosed herein are methods of computing a probability of defects on a substrate produced by the device manufacturing process, and of obtaining an attribute of a distribution of the residue of a non-probabilistic model.

    METHOD OF DETERMINING A POSITION OF A FEATURE
    9.
    发明公开
    METHOD OF DETERMINING A POSITION OF A FEATURE 审中-公开

    公开(公告)号：EP3339959A1

    公开(公告)日：2018-06-27

    申请号：EP16206732.6

    申请日：2016-12-23

    Applicant: ASML Netherlands B.V.

    Inventor： HUIJGEN, Ralph, Timotheus ,  KEA, Marc, Jurian ,  VAN KESSEL, Marcel, Theodorus, Maria

    IPC: G03F9/00 ,  G03F7/20

    CPC classification number: G03F9/7092 ,  G03F7/70633

    Abstract: The present invention provides a method, system and program for determining a position of a feature referenced to a substrate. The method comprises measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate comprising the feature, or another layer of the substrate, or another layer of another substrate.

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