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公开(公告)号:WO2021043936A1
公开(公告)日:2021-03-11
申请号:PCT/EP2020/074663
申请日:2020-09-03
Applicant: ASML NETHERLANDS B.V.
Inventor: KOOIMAN, Marleen , PISARENCO, Maxim , SLACHTER, Abraham , MASLOW, Mark, John , OYARZUN RIVERA, Bernardo, Andres , TEL, Wim, Tjibbo , MAAS, Ruben, Cornelis
Abstract: Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.
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公开(公告)号:WO2021229030A1
公开(公告)日:2021-11-18
申请号:PCT/EP2021/062772
申请日:2021-05-12
Applicant: ASML NETHERLANDS B.V.
Inventor: BATISTAKIS, Chrysostomos , PISARENCO, Maxim , OYARZUN RIVERA, Bernardo, Andres , SLACHTER, Abraham
IPC: G03F7/20 , G06T7/00 , G01N21/956
Abstract: Described herein is a method for training a machine learning model to determine a source of error contribution to multiple features of a pattern printed on a substrate. The method includes obtaining training data having multiple datasets, wherein each dataset has error contribution values representative of an error contribution from one of multiple sources to the features, and wherein each dataset is associated with an actual classification that identifies a source of the error contribution of the corresponding dataset; and training, based on the training data, a machine learning model to predict a classification of a reference dataset of the datasets such that a cost function that determines a difference between the predicted classification and the actual classification of the reference dataset is reduced.
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公开(公告)号:WO2020114684A1
公开(公告)日:2020-06-11
申请号:PCT/EP2019/079640
申请日:2019-10-30
Applicant: ASML NETHERLANDS B.V.
Inventor: SLACHTER, Abraham , TEL, Wim, Tjibbo , SLOTBOOM, Daan, Maurits , TIMOSHKOV, Vadim, Yourievich , VAN DER STRATEN, Koen, Wilhelmus, Cornelis, Adrianus , MENCHTCHIKOV, Boris , HASTINGS, Simon, Philip, Spencer , TABERY, Cyrus, Emil , GENIN, Maxime, Philippe, Frederic , ZHANG, Youping , ZOU, Yi , LIN, Chenxi , CHENG, Yana
IPC: G03F7/20
Abstract: A method for analyzing a process, the method including: obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.
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公开(公告)号:WO2019121486A1
公开(公告)日:2019-06-27
申请号:PCT/EP2018/085159
申请日:2018-12-17
Applicant: ASML NETHERLANDS B.V.
Inventor: SLACHTER, Abraham , HUNSCHE, Stefan , TEL, Wim, Tjibbo , VAN OOSTEN, Anton, Bernhard , VAN INGEN SCHENAU, Koenraad , RISPENS, Gijsbert , PETERSON, Brennan
IPC: G03F7/20
Abstract: Described herein is a method. The method includes steps for obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.
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公开(公告)号:WO2021165419A1
公开(公告)日:2021-08-26
申请号:PCT/EP2021/054064
申请日:2021-02-18
Applicant: ASML NETHERLANDS B.V.
Inventor: VAN INGEN SCHENAU, Koenraad , SLACHTER, Abraham , TIMOSHKOV, Vadim Yourievich , KOOIMAN, Marleen , VAN LARE, Marie-Claire , DILLEN, Hermanus, Adrianus , HUNSCHE, Stefan , COLINA, Luis, Alberto, Colina, Santamaría , JIANG, Aiqin , WANG, Fuming , RAGHUNATHAN, Sudharshanan
IPC: G03F7/20
Abstract: Described herein are methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of the characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining the probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.
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公开(公告)号:WO2019063206A1
公开(公告)日:2019-04-04
申请号:PCT/EP2018/072605
申请日:2018-08-22
Applicant: ASML NETHERLANDS B.V.
Inventor: TEL, Wim, Tjibbo , MASLOW, Mark, John , VAN INGEN SCHENAU, Koenraad , WARNAAR, Patrick , SLACHTER, Abraham , ANUNCIADO, Roy , VAN GORP, Simon, Hendrik, Celine , STAALS, Frank , JOCHEMSEN, Marinus
IPC: G03F7/20
Abstract: Disclosed herein is a method for determining one or more control parameters of a manufacturing process comprising a lithographic process and one or more further processes, the method comprising: obtaining an image of at least part of a substrate, wherein the image comprises at least one feature manufactured on the substrate by the manufacturing process; calculating one or more image-related metrics in dependence on a contour determined from the image, wherein one of the image -related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or said one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.
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公开(公告)号:EP4235305A1
公开(公告)日:2023-08-30
申请号:EP23171216.7
申请日:2018-08-22
Applicant: ASML Netherlands B.V.
Inventor: ANUNCIADO, Roy , JOCHEMSEN, Marinus , MASLOW, Mark, John , SLACHTER, Abraham , STAALS, Frank , TEL, Wim, Tjibbo , VAN GORP, Simon, Hendrik, Celine , VAN INGEN SCHENAU, Koenraad , WARNAAR, Patrick
IPC: G03F7/20
Abstract: Disclosed herein is a method for determining one or more control parameters of a manufacturing process comprising a lithographic process and one or more further processes, the method comprising: obtaining an image of at least part of a substrate, wherein the image comprises at least one feature manufactured on the substrate by the manufacturing process; calculating one or more image-related metrics in dependence on a contour determined from the image, wherein one of the image-related metrics is an edge placement error, EPE, of the at least one feature; and determining one or more control parameters of the lithographic process and/or said one or more further processes in dependence on the edge placement error, wherein at least one control parameter is determined so as to minimize the edge placement error of the at least one feature.
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公开(公告)号:EP3789826A1
公开(公告)日:2021-03-10
申请号:EP19195527.7
申请日:2019-09-05
Applicant: ASML Netherlands B.V.
Inventor: KOOIMAN, Marleen , PISARENCO, Maxim , SLACHTER, Abraham , MASLOW, Mark, John
Abstract: Described herein is a method of training a model configured to predict whether a feature associated with an imaged substrate will be defective after etching of the imaged substrate and determining etch conditions based on the trained model. The method includes obtaining, via a metrology tool, (i) an after development image of the imaged substrate at a given location, the after development image including a plurality of features, and (ii) an after etch image of the imaged substrate at the given location; and training, using the after development image and the after etch image, the model configured to determine defectiveness of a given feature of the plurality of features in the after development image. In an embodiment, the determining of defectiveness is based on comparing the given feature in the after development image with a corresponding etch feature in the after etch image.
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公开(公告)号:EP3629087A1
公开(公告)日:2020-04-01
申请号:EP18196917.1
申请日:2018-09-26
Applicant: ASML Netherlands B.V.
Inventor: MAHAJAN, Sunit Sondhi , SLACHTER, Abraham , PETERSON, Brennan , VAN DER STRATEN, Koen Wilhelmus Cornelis Adrianus , CORRADI, Antonio , WOLTGENS, Pieter Joseph Marie
Abstract: A method for controlling a processing apparatus used in a semiconductor manufacturing process to form a structure on a substrate, the method comprising:
obtaining a relationship between a geometric parameter of the structure and a performance characteristic of a device including the structure; and
determining a process setting for the processing apparatus based on an expected value of the geometric parameter of the structure when using the processing setting and a desired performance characteristic of the device.-
公开(公告)号:EP3462240A1
公开(公告)日:2019-04-03
申请号:EP17193430.0
申请日:2017-09-27
Applicant: ASML Netherlands B.V.
Inventor: TEL, Wim, Tjibbo , WARNAAR, Patrick , MASLOW, Mark, John , SLACHTER, Abraham , VAN INGEN SCHENAU, Koenraad
IPC: G03F7/20
Abstract: Disclosed herein is a method in the manufacturing process of a device on a substrate, wherein the manufacturing process comprises a lithographic process of imaging a portion of a design layout onto the substrate using a lithographic apparatus and one or more further processes in the manufacturing process of the device, the method comprising: obtaining an image of at least part of the substrate, wherein the image comprises at least one feature comprised by the device being manufactured on the substrate; calculating one or more image-related metrics in dependence on a contour determined from the image comprising the at least one feature; determining one or more control parameters of the lithographic apparatus and/or said one or more further processes in the manufacturing process of the device in dependence on the one or more image-related metrics. Advantageously, the determination of the control parameters is improved.
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