公开(公告)号：US20220091514A1

公开(公告)日：2022-03-24

申请号：US17424991

申请日：2019-12-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  David Frans Simon DECKERS ,  Bijoy RAJASEKHARAN ,  Ignacio Salvador VAZQUEZ RODARTE ,  Sarathi ROY

IPC: G03F7/20 ,  G05B13/02

Abstract: A method of determining a control parameter for a lithographic process is disclosed, the method includes: defining a substrate model for representing a process parameter fingerprint across a substrate, the substrate model being defined as a combination of basis functions including at least one basis function suitable for representing variation of the process parameter fingerprint between substrates and/or batches of substrates; receiving measurements of the process parameter across at least one substrate; calculating substrate model parameters using the measurements and the basis functions; and determining the control parameter based on the substrate model parameters and the similarity of the at least one basis function to a process parameter fingerprint variation between substrates and/or batches of substrates.

公开(公告)号：US20200278614A1

公开(公告)日：2020-09-03

申请号：US16762982

申请日：2018-11-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  Bijoy RAJASEKHARAN ,  Lydia Marianna VERGAIJ-HUIZER ,  Jochem Sebastiaan WILDENBERG ,  Ronald VAN ITTERSUM ,  Pieter Gerardus Jacobus SMORENBERG ,  Robertus Wilhelmus VAN DER HEIJDEN ,  Xiuhong WEI ,  Hadi YAGUBIZADE

IPC: G03F7/20

Abstract: A method for determining a plurality of corrections for control of at least one manufacturing apparatus used in a manufacturing process for providing product structures to a substrate in a plurality of layers, the method including: determining the plurality of corrections including a correction for each layer, based on an actuation potential of the applicable manufacturing apparatus used in the formation of each layer, wherein the determining includes determining corrections for each layer simultaneously in terms of a matching parameter.

公开(公告)号：US20200026200A1

公开(公告)日：2020-01-23

申请号：US16495119

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Jochem Sebastiaan WILDENBERG ,  Marinus JOCHEMSEN ,  Erik JENSEN ,  Erik Johannes Maria WALLERBOS ,  Cornelis Johannes RIJNIERSE ,  Bijoy RAJASEKHARAN ,  Roy WERKMAN ,  Jurgen Johannes Henerikus Maria SCHOONUS

IPC: G03F7/20

Abstract: A method for optimizing a sequence of processes for manufacturing of product units, includes: associating measurement results of performance parameters (e.g., fingerprints) with the recorded process characteristics (e.g., context); obtaining a characteristic (e.g., context) of a previous process (e.g. deposition) in the sequence already performed on a product unit; obtaining a characteristic (e.g., context) of a subsequent process (e.g., exposure) in the sequence to be performed on the product unit; determining a predicted performance parameter (e.g., fingerprint) of the product unit associated with the sequence of previous and subsequent processes by using the obtained characteristics to retrieve measurement results of the performance parameters (e.g., fingerprints) corresponding to the recorded characteristics; and determining corrections to be applied to future processes (e.g. exposure, etch) in the sequence to be performed on the product unit, based on the determined predicted performance parameter.

公开(公告)号：US20190285992A1

公开(公告)日：2019-09-19

申请号：US16463057

申请日：2017-11-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus VAN HAREN ,  Victor Emanuel CALADO ,  Leon Paul VAN DIJK ,  Roy WERKMAN ,  Everhardus Cornelis MOS ,  Jochem Sebastiaan WILDENBERG ,  Marinus JOCHEMSEN ,  Bijoy RAJASEKHARAN ,  Erik JENSEN ,  Adam Jan URBANCZYK

IPC: G03F7/20

Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.