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公开(公告)号：US20220260925A1
公开(公告)日：2022-08-18
申请号：US17738093
申请日：2022-05-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Bart Peter Bert SEGERS , Everhardus Cornelis MOS , Emil Peter SCHMITT-WEAVER , Yichen ZHANG , Petrus Gerardus VAN RHEE , Xing Lan LIU , Maria KILITZIRAKI , Reiner Maria JUNGBLUT , Hyunwoo YU
Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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公开(公告)号：US20180173099A1
公开(公告)日：2018-06-21
申请号：US15737400
申请日：2016-06-07
Applicant: ASML Netherlands B.V.
Inventor： Cedric Marc AFFENTAUSCHEGG , Milenko JOVANOVIC , Richard Johannes Franciscus VAN HAREN , Reiner Maria JUNGBLUT , Robertus Wilhelmus VAN DER HEIJDEN
IPC: G03F7/20
CPC classification number: G03F7/706 , G03F7/70008 , G03F7/7055 , G03F7/70633 , G03F7/70683
Abstract: A method to form on a substrate a first target comprising a first feature and a second target comprising a second feature, wherein the forming of the targets comprises applying the first feature and the second feature to the substrate by projection of a radiation beam through a production patterning device installed in a lithographic apparatus, the features corresponding to one or more features of the patterning device, and controlling a configuration of the lithographic apparatus to induce an aberration component, such that the first feature is applied to the substrate using a first value of an induced aberration component and the second feature is applied to the substrate using a second, different value of the induced aberration component; measuring a property of the targets; and using the measurements to determine a sensitivity of the property of the targets to changes in value of the induced aberration component.
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公开(公告)号：US20170160073A1
公开(公告)日：2017-06-08
申请号：US15432684
申请日：2017-02-14
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk ELINGS , Franciscus Bernardus Maria VAN BILSEN , Christianus Gerardus Maria DE MOL , Everhardus Cornelis MOS , Hoite Pieter Theodoor TOLSMA , Peter TEN BERGE , Paul Jacques VAN WIJNEN , Leonardus Henricus Marie VERSTAPPEN , Gerald DICKER , Reiner Maria JUNGBLUT , Li CHUNG-HSUN
CPC classification number: G01B11/002 , G01B11/02 , G01B11/14 , G01B11/26 , G01N21/9501 , G01N21/956 , G01N21/95607 , G03F7/70508 , G03F7/70625 , G03F7/70633 , G05B19/41875 , G05B2219/37224 , H01L22/20 , Y02P90/20 , Y02P90/22
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.
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公开(公告)号：US20210191278A1
公开(公告)日：2021-06-24
申请号：US17197167
申请日：2021-03-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Bart Peter Bert SEGERS , Everhardus Cornelis MOS , Emil Peter SCHMITT-WEAVER , Yichen ZHANG , Petrus Gerardus VAN RHEE , Xing Lan LIU , Maria KILITZIRAKI , Reiner Maria JUNGBLUT , Hyunwoo YU
Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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Patent Agency Ranking
公开(公告)号：US20200310242A1
公开(公告)日：2020-10-01
申请号：US16099452
申请日：2017-05-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus VAN HAREN , Reiner Maria JUNGBLUT , Leon Paul VAN DIJK , Willem Seine Christian ROELOFS , Wim Tjibbo TEL , Stefan HUNSCHE , Maurits VAN DER SCHAAR
Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.
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6.发明申请公开(公告)号：US20180210351A1
公开(公告)日：2018-07-26
申请号：US15743661
申请日：2016-07-05
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F9/7026 , G03F7/70616 , G03F9/7034 , G03F9/7046 , G03F9/7049
Abstract: A lithographic apparatus applies a device pattern at multiple fields across a substrate. A height map is decomposed into a plurality of components. A first height map component represents topographical variations associated with the device pattern. One or more further height map components represent other topographical variations. Using each height map component, control set-points are calculated according to a control algorithm specific to each component. The control set-points calculated for the different height map components are then combined and used to control imaging of the device pattern to the substrate. The specific control algorithms can be different from one another, and may have differing degrees of nonlinearity. The combining of the different set-points can be linear. Focus control in the presence of device-specific topography and other local variations can be improved.
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公开(公告)号：US20200319118A1
公开(公告)日：2020-10-08
申请号：US16905629
申请日：2020-06-18
Applicant: ASML Netherlands B.V.
Inventor： Wouter Lodewijk ELINGS , Franciscus Bernardus Maria VAN BILSEN , Christianus Gerardus Maria DE MOL , Everhardus Cornelis MOS , Hoite Pieter Theodoor TOLSMA , Peter TEN BERGE , Paul Jacques VAN WIJNEN , Leonard us Henricus Marie VERSTAPPEN , Gerald DICKER , Reiner Maria JUNGBLUT , Chung-Hsun LI
IPC: G01N21/95 , G01B11/14 , G01B11/02 , G01N21/956 , G03F7/20 , H01L21/66 , G05B19/418 , G01B11/00 , G01B11/26
Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.
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8.发明申请公开(公告)号：US20190079411A1
公开(公告)日：2019-03-14
申请号：US16076743
申请日：2017-02-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergun CEKLI , Masashi ISHIBASHI , Leon Paul VAN DIJK , Richard Johannes Franciscus VAN HAREN , Xing Lan LIU , Reiner Maria JUNGBLUT , Cedric Marc AFFENTAUSCHEGG , Ronald Henricus Johannes OTTEN
Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.
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9.发明申请公开(公告)号：US20170160648A1
公开(公告)日：2017-06-08
申请号：US15325716
申请日：2015-07-15
Applicant: ASML Netherlands B.V.
Inventor： Wim Tjibbo TEL , Frank STAALS , Paul Christiaan HINNEN , Reiner Maria JUNGBLUT
IPC: G03F7/20
CPC classification number: G03F7/70516 , G03F7/705 , G03F7/70625 , G03F7/70633 , G03F7/70641
Abstract: A method of determining a process window for a lithographic process, the process window describing a degree of acceptable variation in at least one processing parameter during the lithographic process. The method includes obtaining a set of output parameter values derived from measurements performed at a plurality of locations on a substrate, following pattern transfer to the substrate using a lithographic process, and obtaining a corresponding set of actual processing parameter values that includes an actual value of a processing parameter of the lithographic process during the pattern transfer at each of the plurality of locations. The process window is determined from the output parameter values and the actual processing parameter values. This process window may be used to improve the selection of the processing parameter at which a subsequent lithographic process is performed.
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