公开(公告)号：JP2009037245A

公开(公告)日：2009-02-19

申请号：JP2008216969

申请日：2008-08-26

Applicant: Brewer Science Inc ,  ブルーワー サイエンス アイ エヌ シー.

Inventor： SHAO XIE ,  MEADOR JIM D ,  BHAVE MANDAR ,  KRISHNAMURTHY VANDANA ,  NOWAK KELLY A ,  FOWLER MICHELLE ,  DESHPANDE SHREERAM V

IPC: G03F7/11 ,  B32B7/02 ,  C08J3/24 ,  C09D5/00 ,  C09D7/12 ,  C09D105/00 ,  C09D133/00 ,  C09D161/20 ,  C09D163/00 ,  C09D167/00 ,  C09D171/00 ,  C09D179/08 ,  C09D201/00 ,  G03F7/004 ,  G03F7/09 ,  H01L21/027

CPC classification number: C08J3/241 ,  G03F7/091 ,  Y10S430/151

Abstract: PROBLEM TO BE SOLVED: To provide an anti-reflective coating composition that does not crosslink prior to a bake stage in microlithographic processes so as to solve problems of spin bowl incompatibility and stability of an anti-reflective coating. SOLUTION: The anti-reflective composition includes a polymer dissolved or dispersed in a solvent system, a crosslinking agent, a light attenuating compound and a strong acid. The polymer is selected from a group consisting of acrylic polymers, polyesters, epoxy novolacs, polysaccharides, polyethers, polyimides and mixtures thereof. The crosslinking agent is selected from a group consisting of amino resin and epoxy resin. The light attenuating compound is selected from a group consisting of phenolic compounds, carboxylic acid, phosphoric acid, cyano compounds, benzene, naphthalene and anthracene. The composition contains the strong acid by less than 1.0 mass% based upon the total mass of the composition taken as 100 mass%. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供在微光刻工艺中在烘烤阶段之前不交联的抗反射涂料组合物，以解决纺丝碗不相容性和抗反射涂层的稳定性的问题。 抗反射组合物包括溶解或分散在溶剂体系中的聚合物，交联剂，光衰减化合物和强酸。 聚合物选自丙烯酸聚合物，聚酯，环氧酚醛清漆，多糖，聚醚，聚酰亚胺及其混合物。 交联剂选自氨基树脂和环氧树脂。 光衰减化合物选自酚类化合物，羧酸，磷酸，氰基化合物，苯，萘和蒽。 组合物以占组合物总质量的100质量％为基准，含有小于1.0质量％的强酸。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：AU2003300771A8

公开(公告)日：2004-05-25

申请号：AU2003300771

申请日：2003-05-13

Applicant: BREWER SCIENCE INC

Inventor： DESHPANDE SHREERAM V ,  NOWAK KELLY A ,  BHAVE MANDER R ,  XU GU ,  MEADOR JIMMY D

IPC: C09D101/00 ,  C09D129/08 ,  G02B1/11 ,  G03F7/09 ,  H01L21/768 ,  C08F12/02 ,  C08F20/10 ,  C08F212/00 ,  C08F16/36

Abstract: New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a styrene-allyl alcohol polymer and preferably at least one other polymer (e.g., cellulosic polymers) in addition to the styrene-allyl alcohol polymer. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

公开(公告)号：AU2003300771A1

公开(公告)日：2004-05-25

申请号：AU2003300771

申请日：2003-05-13

Applicant: BREWER SCIENCE INC

Inventor： XU GU ,  MEADOR JIMMY D ,  BEHAVE MANDER R ,  DESHPANDE SHREERAM V ,  NOWAK KELLY A

IPC: C09D101/00 ,  C09D129/08 ,  G02B1/11 ,  G03F7/09 ,  H01L21/768

Abstract: New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a styrene-allyl alcohol polymer and preferably at least one other polymer (e.g., cellulosic polymers) in addition to the styrene-allyl alcohol polymer. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

公开(公告)号：DE60315177T2

公开(公告)日：2008-04-10

申请号：DE60315177

申请日：2003-05-13

Applicant: BREWER SCIENCE INC

Inventor： XU GU ,  MEADOR JIMMY D ,  BEHAVE MANDER R ,  DESHPANDE SHREERAM V ,  NOWAK KELLY A

IPC: C08F212/08 ,  C09D101/00 ,  C09D129/08 ,  G02B1/11 ,  G03F7/09 ,  H01L21/768

Abstract: New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a styrene-allyl alcohol polymer and preferably at least one other polymer (e.g., cellulosic polymers) in addition to the styrene-allyl alcohol polymer. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

公开(公告)号：DE60315177D1

公开(公告)日：2007-09-06

申请号：DE60315177

申请日：2003-05-13

Applicant: BREWER SCIENCE INC

Inventor： XU GU ,  MEADOR JIMMY D ,  BEHAVE MANDER R ,  DESHPANDE SHREERAM V ,  NOWAK KELLY A

IPC: C08F212/08 ,  C09D101/00 ,  C09D129/08 ,  G02B1/11 ,  G03F7/09 ,  H01L21/768

Abstract: New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a styrene-allyl alcohol polymer and preferably at least one other polymer (e.g., cellulosic polymers) in addition to the styrene-allyl alcohol polymer. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

公开(公告)号：WO2004040369A3

公开(公告)日：2004-07-08

申请号：PCT/US0315164

申请日：2003-05-13

Applicant: BREWER SCIENCE INC

Inventor： XU GU ,  MEADOR JIMMY D ,  BHAVE MANDAR R ,  DESHPANDE SHREERAM V ,  NOWAK KELLY A

IPC: C09D101/00 ,  C09D129/08 ,  G02B1/11 ,  G03F7/09 ,  H01L21/768 ,  C08F12/02 ,  C08F16/36 ,  C08F20/10 ,  C08F212/00

CPC classification number: H01L21/76808 ,  G02B1/111 ,  G03F7/091 ,  Y10S430/136 ,  Y10S430/151

Abstract: New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a styrene-allyl alcohol polymer and preferably at least one other polymer (e.g., cellulosic polymers) in addition to the styrene-allyl alcohol polymer. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

Abstract translation: 提供了具有改进流动性能的新型抗反射或填充组合物。 除了苯乙烯 - 烯丙醇聚合物之外，组合物还包含苯乙烯 - 烯丙醇聚合物，优选至少一种其他聚合物（例如纤维素聚合物）。 本发明的组合物可以用于在双镶嵌工艺的后续蚀刻期间保护接触或通孔免于降解。 本发明的组合物也可以用于基底（例如硅晶片）以形成具有高蚀刻速率的抗反射涂层，该蚀刻速率最小化或防止后续光致抗蚀剂曝光和显影期间的反射。

公开(公告)号：WO0057247A8

公开(公告)日：2001-03-15

申请号：PCT/US0007463

申请日：2000-03-21

Applicant: BREWER SCIENCE INC

Inventor： MEADOR JIM D ,  NOWAK KELLY A ,  XU GU

IPC: G03F7/11 ,  C08F8/00 ,  C08F220/32 ,  C08F283/10 ,  C09D133/06 ,  G03F7/09 ,  G03C1/492

CPC classification number: C08F8/00 ,  C08F283/10 ,  C09D133/062 ,  G03F7/091 ,  C08F20/00 ,  C08L2666/14 ,  C08L2666/28

Abstract: Anti-reflective coating compositions having improved etch rate, inter alia, are prepared from certain acrylic polymers and copolymers, such as, glycidyl methacrylate reacted with non-polycyclic carboxylic acid dyes and non-polycyclic phenolic dyes, all light absorbing at a wavelength of 193 nm.

Abstract translation: 具有改善的蚀刻速率的抗反射涂料组合物，特别是由某些丙烯酸聚合物和共聚物制备，例如与非多环羧酸染料和非多环酚类染料反应的甲基丙烯酸缩水甘油酯，所有光在波长193处吸光 纳米。

公开(公告)号：EP1554322A4

公开(公告)日：2005-10-05

申请号：EP03809914

申请日：2003-05-13

Applicant: BREWER SCIENCE INC

Inventor： XU GU ,  MEADOR JIMMY D ,  BHAVE MANDER R ,  DESHPANDE SHREERAM V ,  NOWAK KELLY A

IPC: C09D101/00 ,  C09D129/08 ,  G02B1/11 ,  G03F7/09 ,  H01L21/768 ,  C08F212/08

CPC classification number: H01L21/76808 ,  G02B1/111 ,  G03F7/091 ,  Y10S430/136 ,  Y10S430/151

Abstract: New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a styrene-allyl alcohol polymer and preferably at least one other polymer (e.g., cellulosic polymers) in addition to the styrene-allyl alcohol polymer. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.

Abstract translation: 提供了具有改进流动性能的新型抗反射或填充组合物。 除了苯乙烯 - 烯丙醇聚合物之外，组合物还包含苯乙烯 - 烯丙醇聚合物，优选至少一种其他聚合物（例如纤维素聚合物）。 本发明的组合物可以用于在双镶嵌工艺的后续蚀刻期间保护接触或通孔免于降解。 本发明的组合物也可以用于基底（例如硅晶片）以形成具有高蚀刻速率的抗反射涂层，该蚀刻速率最小化或防止后续光致抗蚀剂曝光和显影期间的反射。

公开(公告)号：EP1392508A4

公开(公告)日：2006-06-07

申请号：EP02762137

申请日：2002-04-15

Applicant: BREWER SCIENCE INC

Inventor： SHAO XIE ,  MEADOR JIM D ,  BHAVE MANDAR ,  KRISHNAMURTHY VANDANA ,  NOWAK KELLY A ,  FOWLER MICHELLE ,  DESHPANDE SHREERAM V

IPC: G03F7/11 ,  B32B7/02 ,  C08J3/24 ,  C09D5/00 ,  C09D7/12 ,  C09D105/00 ,  C09D133/00 ,  C09D161/20 ,  C09D163/00 ,  C09D167/00 ,  C09D171/00 ,  C09D179/08 ,  C09D201/00 ,  G03F7/004 ,  G03F7/09 ,  H01L21/027 ,  B32B27/36 ,  G03C1/492

CPC classification number: C08J3/241 ,  G03F7/091 ,  Y10S430/151

Abstract: Anti-reflective compositions and methods of using those compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In one embodiment, the compositions comprise less than about 0.3% by weight of a strong acid. In another embodiment, the weight ratio of strong acid to weak acid in the composition is from about 0:100 to about 25:75. Examples of preferred weak acid compounds include phenolic compounds (e.g., Bisphenol S, Bisphenol A, alpha-cyano-4-hydroxycinnamic acid), carboxylic acids (e.g., acetic acid), phosphoric acid, and cyano compounds. The polymer and other ingredients are preferably physically mixed in a solvent system. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature).