公开(公告)号：US20220336233A1

公开(公告)日：2022-10-20

申请号：US17856039

申请日：2022-07-01

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  You-Ming Hsu ,  Fei-Jain Wu

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L21/78

Abstract: A method of fabricating a semiconductor package includes the steps of: disposing semiconductor devices on a carrier; forming an encapsulation on the carrier to cover the semiconductor devices, a recession of the encapsulation includes a strengthening portion and a recessed portion, the strengthening portion protrudes from the recessed portion and surrounds the recessed portion; and removing the strengthening portion of the recession of the encapsulation.

公开(公告)号：US20140217578A1

公开(公告)日：2014-08-07

申请号：US13833347

申请日：2013-03-15

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Lung-Hua Ho ,  Fei-Jain Wu ,  Chih-Ming Kuo ,  Shih-Chieh Chang ,  Chia-Jung Tu

IPC: H01L23/00

CPC classification number: H01L24/81 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/13006 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13562 ,  H01L2224/1601 ,  H01L2224/16503 ,  H01L2224/81048 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81898 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/00012

Abstract: A semiconductor package process includes the following steps, providing a first substrate having a first metal bump, the first metal bump comprises a joint portion having a first softening point; providing a second substrate having a second metal bump having a top surface, a lateral surface and a second softening point, wherein the first softening point is smaller than the second softening point; performing a heating procedure to make the joint portion of the first metal bump become a softened state; and laminating the first substrate on the second substrate to make the second metal bump embedded into the joint portion in the softened state to make the top surface and the lateral surface of the at least one second metal bump being clad extendedly by compressing the joint portion in the softened state.

Abstract translation: 半导体封装工艺包括以下步骤：提供具有第一金属凸块的第一衬底，第一金属凸块包括具有第一软化点的接合部分; 提供具有第二金属凸块的第二基板，其具有顶表面，侧表面和第二软化点，其中所述第一软化点小于所述第二软化点; 执行加热程序以使第一金属凸块的接合部分变为软化状态; 并且将所述第一基板层压在所述第二基板上，以使所述第二金属凸块以软化状态嵌入所述接合部，以使所述至少一个第二金属凸块的顶表面和所述侧表面通过压缩所述接合部分 软化状态。

公开(公告)号：US20220037166A1

公开(公告)日：2022-02-03

申请号：US17161818

申请日：2021-01-29

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  You-Ming Hsu ,  Fei-Jain Wu

IPC: H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31

Abstract: A method of fabricating a semiconductor package includes the steps of: disposing semiconductor devices on a carrier; forming an encapsulation on the carrier to cover the semiconductor devices, a recession of the encapsulation includes a strengthening portion and a recessed portion, the strengthening portion protrudes from the recessed portion and surrounds the recessed portion; and removing the strengthening portion of the recession of the encapsulation.

公开(公告)号：US11651974B2

公开(公告)日：2023-05-16

申请号：US17161818

申请日：2021-01-29

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chih-Ming Kuo ,  Lung-Hua Ho ,  You-Ming Hsu ,  Fei-Jain Wu

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L21/78

CPC classification number: H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/562

Abstract: A method of fabricating a semiconductor package includes the steps of: disposing semiconductor devices on a carrier; forming an encapsulation on the carrier to cover the semiconductor devices, a recession of the encapsulation includes a strengthening portion and a recessed portion, the strengthening portion protrudes from the recessed portion and surrounds the recessed portion; and removing the strengthening portion of the recession of the encapsulation.

公开(公告)号：US09510441B2

公开(公告)日：2016-11-29

申请号：US14642945

申请日：2015-03-10

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chin-Tang Hsieh ,  Fei-Jain Wu ,  Chia-Jung Tu

IPC: H05K1/00 ,  H05K1/02 ,  H05K1/03

CPC classification number: H05K1/0209 ,  H05K1/0203 ,  H05K1/028 ,  H05K1/0346 ,  H05K1/0393 ,  H05K1/189 ,  H05K2201/0154 ,  H05K2201/066 ,  H05K2201/068

Abstract: A flexible substrate includes a circuit board, a flexible heat-dissipating structure and an adhesive. The circuit board has a substrate and a circuit layer formed on a top surface of the substrate, and the flexible heat-dissipating structure has a flexible supporting plate and a flexible heat-dissipating metal layer formed on a surface of the flexible supporting plate. The flexible heat-dissipating metal layer of the flexible heat-dissipating structure is connected with a bottom surface of the substrate by the adhesive. The circuit layer and the flexible heat-dissipating metal layer are made of same material.

Abstract translation: 柔性基板包括电路板，柔性散热结构和粘合剂。 电路基板具有形成在基板顶面的基板和电路层，柔性散热结构具有柔性支撑板和形成在柔性支撑板的表面上的柔性散热金属层。 柔性散热结构的柔性散热金属层通过粘合剂与基板的底面连接。 电路层和柔性散热金属层由相同的材料制成。

公开(公告)号：US09961759B2

公开(公告)日：2018-05-01

申请号：US15279657

申请日：2016-09-29

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chin-Tang Hsieh ,  Fei-Jain Wu ,  Chia-Jung Tu

IPC: H05K1/11 ,  H05K1/02 ,  H05K1/03 ,  H05K1/18

CPC classification number: H05K1/0209 ,  H05K1/0203 ,  H05K1/028 ,  H05K1/0346 ,  H05K1/0393 ,  H05K1/189 ,  H05K2201/0154 ,  H05K2201/066 ,  H05K2201/068

Abstract: A flexible substrate includes a circuit board, a flexible heat-dissipating structure and an adhesive. The circuit board has a substrate and a circuit layer formed on a top surface of the substrate, and the flexible heat-dissipating structure has a flexible supporting plate and a flexible heat-dissipating metal layer formed on a surface of the flexible supporting plate. The flexible heat-dissipating metal layer of the flexible heat-dissipating structure is connected with a bottom surface of the substrate by the adhesive. The circuit layer and the flexible heat-dissipating metal layer are made of same material.

公开(公告)号：US20170019984A1

公开(公告)日：2017-01-19

申请号：US15279657

申请日：2016-09-29

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chin-Tang Hsieh ,  Fei-Jain Wu ,  Chia-Jung Tu

IPC: H05K1/02 ,  H05K1/03

CPC classification number: H05K1/0209 ,  H05K1/0203 ,  H05K1/028 ,  H05K1/0346 ,  H05K1/0393 ,  H05K1/189 ,  H05K2201/0154 ,  H05K2201/066 ,  H05K2201/068

Abstract: A flexible substrate includes a circuit board, a flexible heat-dissipating structure and an adhesive. The circuit board has a substrate and a circuit layer formed on a top surface of the substrate, and the flexible heat-dissipating structure has a flexible supporting plate and a flexible heat-dissipating metal layer formed on a surface of the flexible supporting plate. The flexible heat-dissipating metal layer of the flexible heat-dissipating structure is connected with a bottom surface of the substrate by the adhesive. The circuit layer and the flexible heat-dissipating metal layer are made of same material.

Abstract translation: 柔性基板包括电路板，柔性散热结构和粘合剂。 电路基板具有形成在基板顶面的基板和电路层，柔性散热结构具有柔性支撑板和形成在柔性支撑板的表面上的柔性散热金属层。 柔性散热结构的柔性散热金属层通过粘合剂与基板的底面连接。 电路层和柔性散热金属层由相同的材料制成。

公开(公告)号：US20160234927A1

公开(公告)日：2016-08-11

申请号：US14642945

申请日：2015-03-10

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Chin-Tang Hsieh ,  Fei-Jain Wu ,  Chia-Jung Tu

IPC: H05K1/02 ,  H05K1/03

CPC classification number: H05K1/0209 ,  H05K1/0203 ,  H05K1/028 ,  H05K1/0346 ,  H05K1/0393 ,  H05K1/189 ,  H05K2201/0154 ,  H05K2201/066 ,  H05K2201/068

Abstract: A flexible substrate includes a circuit board, a flexible heat-dissipating structure and an adhesive. The circuit board has a substrate and a circuit layer formed on a top surface of the substrate, and the flexible heat-dissipating structure has a flexible supporting plate and a flexible heat-dissipating metal layer formed on a surface of the flexible supporting plate. The flexible heat-dissipating metal layer of the flexible heat-dissipating structure is connected with a bottom surface of the substrate by the adhesive. The circuit layer and the flexible heat-dissipating metal layer are made of same material.

Abstract translation: 柔性基板包括电路板，柔性散热结构和粘合剂。 电路基板具有形成在基板顶面的基板和电路层，柔性散热结构具有柔性支撑板和形成在柔性支撑板的表面上的柔性散热金属层。 柔性散热结构的柔性散热金属层通过粘合剂与基板的底面连接。 电路层和柔性散热金属层由相同的材料制成。

公开(公告)号：US20230326894A1

公开(公告)日：2023-10-12

申请号：US18078170

申请日：2022-12-09

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Fei-Jain Wu ,  Sheng-Jen Wu ,  Hsueh-Shun Yeh

IPC: H01L23/00 ,  H01L21/56

CPC classification number: H01L24/13 ,  H01L2224/05573 ,  H01L24/16 ,  H01L24/32 ,  H01L24/83 ,  H01L24/81 ,  H01L24/05 ,  H01L21/563 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2924/3011 ,  H01L2224/32225 ,  H01L2224/81201 ,  H01L2224/83201 ,  H01L2224/13007 ,  H01L2224/13019 ,  H01L2224/1319 ,  H01L2224/13541 ,  H01L2224/13553 ,  H01L2224/13562 ,  H01L2224/13582 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L24/73

Abstract: In a bonding process of a flip chip bonding method, a chip is bonded to contact pads of a substrate by composite bumps which each includes a raiser, a UBM layer and a bonding layer. Before the bonding process, the surface of the bonding layer facing toward the substrate is referred to as a surface to be bonded. During the bonding process, the surface to be bonded is boned to the contact pad and become a bonding surface on the contact pad. The bonding surface has an area greater than that of the surface to be bonded so as to reduce electrical impedance between the chip and the substrate.

公开(公告)号：US09177830B1

公开(公告)日：2015-11-03

申请号：US14529246

申请日：2014-10-31

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Fei-Jain Wu ,  Tsang-Sheng Liao ,  Ching-Yi Huang ,  Chun-Te Lee

IPC: H01L21/44 ,  H01L23/48

CPC classification number: H01L24/11 ,  H01L24/13 ,  H01L2224/03912 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11848 ,  H01L2224/13005 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16237 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/35 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/00012 ,  H01L2924/206

Abstract: A manufacturing method of a substrate with a bump structure, a copper layer is formed on a semiconductor substrate, and a nickel layer is formed on the copper layer. A bump structure is composed of the copper layer and the nickel layer, wherein the hardness of the bump structure after annealing process depends on the thickness of the nickel layer to meet the user's demand. The hardness of the bump structure meets the user's demand prevents a glass substrate from cracking when the substrate with the bump structure is bonded with the glass substrate.

Abstract translation: 具有凸块结构的基板的制造方法，在半导体基板上形成铜层，在铜层上形成镍层。 凸点结构由铜层和镍层组成，其中退火处理后的凸块结构的硬度取决于镍层的厚度以满足用户的需求。 凸块结构的硬度满足用户的要求，当具有凸块结构的基板与玻璃基板结合时，防止玻璃基板破裂。