公开(公告)号：US20230363280A1

公开(公告)日：2023-11-09

申请号：US18356487

申请日：2023-07-21

Applicant: DENSO CORPORATION

Inventor： Minekazu SAKAI ,  Kazuaki MAWATARI ,  Yuji KOYAMA ,  Masaaki TANAKA ,  Tomoya JOMORI ,  Yuhei SHIMIZU

IPC: H10N30/00 ,  H10N30/853 ,  H10N30/074

CPC classification number: H10N30/10516 ,  H10N30/853 ,  H10N30/074

Abstract: A piezoelectric element includes a support and a vibration unit disposed on the support. The vibration unit includes a piezoelectric film and an electrode film connected to the piezoelectric film to extract charges generated by deformation of the piezoelectric film. The vibration unit has a support region supported on the support, and a vibration region connected to the support region and floating from the support. The vibration unit outputs a pressure detection signal based on the charges. The vibration region includes a plurality of slits extending from a support region side toward a center of the vibration region and is in a state of being supported at both ends with respect to the support region.

公开(公告)号：US20190023563A1

公开(公告)日：2019-01-24

申请号：US15757672

申请日：2016-09-09

Applicant: DENSO CORPORATION

Inventor： Akira OGAWA ,  Yoshitaka NODA ,  Tetsuo YOSHIOKA ,  Yuhei SHIMIZU

IPC: B81C1/00

CPC classification number: B81C1/00579 ,  B81B2201/033 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0139 ,  B81C2201/0142 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0882

Abstract: A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.