公开(公告)号：US20240329211A1

公开(公告)日：2024-10-03

申请号：US18741559

申请日：2024-06-12

Applicant: DENSO CORPORATION ,  DENSO WAVE INCORPORATED

Inventor： Hiroshi ASAMI ,  Akira OGAWA ,  Yusuke IMAI

IPC: G01S7/481

CPC classification number: G01S7/4817 ,  G01S7/4814 ,  G01S7/4816

Abstract: A photodetection device includes: a base that defines first and second reference directions perpendicular to each other; a projection holder positioned in the first and second reference directions with respect to the base; a projection unit having a projector held by the base and a projection lens system held by the projection holder on a projection optical axis perpendicular to the first and second reference directions; a first projection shim replaceably interposed between the base and the projection holder, in a first projection gap that extends along the first reference direction; a second projection shim replaceably interposed between the base and the projection holder, in a second projection gap that extends along a projection intersecting direction that intersects the first and second reference directions; and a light projection screw that fixes the projection holder to the base by screwing along the first reference direction.

公开(公告)号：US20190023563A1

公开(公告)日：2019-01-24

申请号：US15757672

申请日：2016-09-09

Applicant: DENSO CORPORATION

Inventor： Akira OGAWA ,  Yoshitaka NODA ,  Tetsuo YOSHIOKA ,  Yuhei SHIMIZU

IPC: B81C1/00

CPC classification number: B81C1/00579 ,  B81B2201/033 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0139 ,  B81C2201/0142 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0882

Abstract: A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.

公开(公告)号：US20240069180A1

公开(公告)日：2024-02-29

申请号：US18502567

申请日：2023-11-06

Applicant: DENSO CORPORATION

Inventor： Akira OGAWA

IPC: G01S7/497

CPC classification number: G01S7/4972

Abstract: An optical axis adjustment method for adjusting an optical axis direction of a laser radar device includes irradiating, detecting, and adjusting. The irradiating is irradiating an object with laser light emitted from the laser radar device by controlling the laser radar device to cause a difference in brightness in each of different portions of the object. The detecting is the detecting a center of an irradiation area on the object irradiated with the laser light based on the difference in brightness of each of the different portions of the object irradiated with the laser light emitted from the laser radar device. The adjusting is adjusting the optical axis direction of the laser radar device such that the center detected in the detecting is at a predetermined position relative to the laser radar device.