公开(公告)号：US20180358780A1

公开(公告)日：2018-12-13

申请号：US16106458

申请日：2018-08-21

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Yi-Wen HUANG ,  Yi-Hung LIN ,  Chih-Chiang LU

IPC: H01S5/187 ,  H01S5/343 ,  H01S5/183 ,  H01S5/22 ,  H01S5/042 ,  H01S5/026 ,  H01S5/028 ,  H01S5/022 ,  H01S5/42

CPC classification number: H01S5/0425 ,  H01S5/02276 ,  H01S5/026 ,  H01S5/0283 ,  H01S5/0286 ,  H01S5/0421 ,  H01S5/18308 ,  H01S5/18322 ,  H01S5/18344 ,  H01S5/1835 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/187 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/343 ,  H01S5/423 ,  H01S2301/18

Abstract: A light-emitting device is provided. The light-emitting device comprises: a substrate; and multiple radiation emitting regions arranged on the substrate, and comprising: a first radiation emitting region capable of emitting coherent light and emits a coherent light when driven by a first current; a second radiation emitting region capable of emitting coherent light and emits an incoherent light when driven by the first current, wherein each of the first radiation emitting region and the second emitting region comprises epitaxial structure comprising a first DBR stack, a light-emitting structure, and a second DBR stack.

公开(公告)号：US20180048119A1

公开(公告)日：2018-02-15

申请号：US15794756

申请日：2017-10-26

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Yi-Wen HUANG ,  Yi-Hung LIN ,  Chih-Chiang LU

IPC: H01S5/187 ,  H01S5/183 ,  H01S5/042 ,  H01S5/343 ,  H01S5/22

CPC classification number: H01S5/187 ,  H01S5/02276 ,  H01S5/026 ,  H01S5/0283 ,  H01S5/0286 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18322 ,  H01S5/18344 ,  H01S5/1835 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/343 ,  H01S5/423 ,  H01S2301/18

Abstract: A light-emitting device is provided. The light-emitting device comprises: an epitaxial structure comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode on the epitaxial structure; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer.

公开(公告)号：US20170054056A1

公开(公告)日：2017-02-23

申请号：US15345185

申请日：2016-11-07

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Ching-San TAO ,  Chen OU ,  Min-Hsun HSIEH ,  Chao-Hsing CHEN

IPC: H01L33/10 ,  H01L33/40 ,  H01L33/38 ,  H01L33/42 ,  H01L33/22

CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first dielectric layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first dielectric layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first dielectric layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.

Abstract translation: 一种发光器件，包括：包含第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上并且包括第一多个空腔的第二导电类型半导体层; 形成在所述第二导电型半导体层的第一部分上的第一电介质层; 第一透明导电氧化物层，形成在第一介电层上和第二导电类型半导体层的第二部分上，第一透明导电氧化物层包括与第一电介质层接触的第一部分， 第二导电型半导体层的上表面; 形成在所述第一部分上的第一电极; 以及形成在第一透明导电氧化物层和第一电极之间的第一反射金属层。

公开(公告)号：US20160343913A1

公开(公告)日：2016-11-24

申请号：US14719694

申请日：2015-05-22

Applicant: Epistar Corporation

Inventor： Wei-Fan KE ,  Tzu-Chieh HSU ,  Yu-Ren PENG

IPC: H01L33/42 ,  H01L33/22 ,  H01L33/30 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: The present disclosure provides a light-emitting device. The light-emitting device comprises a light-emitting stack comprising an active layer and a first surface comprising a roughened area; a smoothing layer on the first surface, wherein the smoothing layer has a surface smoother than the first surface; and a transparent conductive layer on the smoothing layer. A method for forming the light-emitting device is also disclosed.

Abstract translation: 本发明提供一种发光装置。 发光装置包括发光堆叠，其包括有源层和包括粗糙区域的第一表面; 在所述第一表面上的平滑层，其中所述平滑层具有比所述第一表面更光滑的表面; 和平滑层上的透明导电层。 还公开了一种用于形成发光器件的方法。

公开(公告)号：US20140319558A1

公开(公告)日：2014-10-30

申请号：US14261368

申请日：2014-04-24

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming CHEN ,  Hao-Min KU ,  Chih-Chiang LU ,  Tzu-Chieh HSU

IPC: H01L33/10 ,  H01L33/26

CPC classification number: H01L33/10 ,  H01L33/38 ,  H01L33/405

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprise a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active formed between the first-type semiconductor layer and the second-type semiconductor layer and emitting a light; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface; wherein the critical angle of the light at the first interface is larger than that at the second interface; and wherein the reflective structure ohmically contacts the first-type semiconductor layer at the first interface.

Abstract translation: 本公开公开了一种发光装置。 发光装置包括具有第一类型半导体层，第二类型半导体层和形成在第一类型半导体层和第二类型半导体层之间并发射光的活性物质的发光堆叠; 以及形成在所述第一类型半导体层上并具有第一接口和第二接口的反射结构; 其中所述第一界面处的光的临界角大于所述第二界面处的所述临界角; 并且其中所述反射结构在所述第一界面处欧姆接触所述第一类型半导体层。

公开(公告)号：US20210119078A1

公开(公告)日：2021-04-22

申请号：US17114012

申请日：2020-12-07

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming CHEN ,  Hao-Min KU ,  Chih-Chiang LU ,  Tzu-Chieh HSU

IPC: H01L33/10 ,  H01L33/40

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

公开(公告)号：US20200066935A1

公开(公告)日：2020-02-27

申请号：US16673312

申请日：2019-11-04

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming CHEN ,  Hao-Min KU ,  Chih-Chiang LU ,  Tzu-Chieh HSU

IPC: H01L33/10 ,  H01L33/40

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

公开(公告)号：US20140070250A1

公开(公告)日：2014-03-13

申请号：US13856220

申请日：2013-04-03

Applicant: Epistar Corporation

Inventor： Shih-I CHEN ,  Tsung-Xian LEE ,  Yi-Ming CHEN ,  Wei-Yu CHEN ,  Ching- Pei LIN ,  Min-Hsun HSIEH ,  Cheng-Nan HAN ,  Tien-Yang WANG ,  Hsing-Chao CHEN ,  Hsin-Mao LIU ,  Zong-Xi CHEN ,  Tzu-Chieh HSU ,  Chien-Fu HUANG ,  Yu-Ren PENG

IPC: H01L33/50

CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。

公开(公告)号：US20210336079A1

公开(公告)日：2021-10-28

申请号：US17333611

申请日：2021-05-28

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Yi-Wen HUANG ,  Shou-Lung CHEN ,  Hsin-Kang CHEN

IPC: H01L33/10 ,  H01S5/042 ,  H01S5/42 ,  H01L33/20 ,  H01L33/60 ,  H01S5/02 ,  H01L33/62 ,  H01L33/38 ,  H01S5/183

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

公开(公告)号：US20180062033A1

公开(公告)日：2018-03-01

申请号：US15793611

申请日：2017-10-25

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming CHEN ,  Hao-Min KU ,  Chih-Chiang LU ,  Tzu-Chieh HSU

IPC: H01L33/10

CPC classification number: H01L33/10 ,  H01L33/38 ,  H01L33/405

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a reflective structure formed on the first-type semiconductor layer; and a first interface and a second interface formed between light-emitting stack and the reflective structure; wherein a critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface; wherein the reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface.