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公开(公告)号：US20180254391A1
公开(公告)日：2018-09-06
申请号：US15973091
申请日：2018-05-07
Applicant: Epistar Corporation
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching-San TAO , Chih-Peng NI , Tzer- Perng CHEN , Jen-Chau WU
CPC classification number: H01L33/58 , H01L24/19 , H01L24/20 , H01L24/97 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/486 , H01L2933/0016
Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
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公开(公告)号：US20200313051A1
公开(公告)日：2020-10-01
申请号：US16900557
申请日：2020-06-12
Applicant: EPISTAR CORPORATION
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching-San TAO , Chih-Peng NI , Tzer- Perng CHEN , Jen-Chau WU
Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
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公开(公告)号：US20170054056A1
公开(公告)日：2017-02-23
申请号：US15345185
申请日：2016-11-07
Applicant: EPISTAR CORPORATION
Inventor： Tzu-Chieh HSU , Ching-San TAO , Chen OU , Min-Hsun HSIEH , Chao-Hsing CHEN
CPC classification number: H01L33/105 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/42
Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first dielectric layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first dielectric layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first dielectric layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.
Abstract translation: 一种发光器件，包括：包含第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上并且包括第一多个空腔的第二导电类型半导体层; 形成在所述第二导电型半导体层的第一部分上的第一电介质层; 第一透明导电氧化物层，形成在第一介电层上和第二导电类型半导体层的第二部分上，第一透明导电氧化物层包括与第一电介质层接触的第一部分， 第二导电型半导体层的上表面; 形成在所述第一部分上的第一电极; 以及形成在第一透明导电氧化物层和第一电极之间的第一反射金属层。
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公开(公告)号：US20150214449A1
公开(公告)日：2015-07-30
申请号：US14679066
申请日：2015-04-06
Applicant: Epistar Corporation
Inventor： Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching-San TAO , Chih-Peng NI , Tzer- Perng CHEN , Jen-Chau WU
CPC classification number: H01L33/58 , H01L24/19 , H01L24/20 , H01L24/97 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/486 , H01L2933/0016
Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
Abstract translation: 本公开公开了一种光电元件，包括：光电单元，包括第一金属层，第二金属层和最外侧表面; 绝缘层，其具有与光电单元重叠并延伸超过侧表面的第一部分，以及在横截面视图中与第一部分分离的第二部分; 以及形成在所述绝缘层上的第一导电层。
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