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公开(公告)号：US20240186447A1
公开(公告)日：2024-06-06
申请号：US18439378
申请日：2024-02-12
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu HUANG , Chih-Chiang LU , Chun-Yu LIN , Hsin-Chih CHIU
CPC classification number: H01L33/02 , H01L22/12 , H01L22/14 , H01L24/24 , H01L25/0753 , H01L33/62 , H01L33/36 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066
Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.
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公开(公告)号：US20190157498A1
公开(公告)日：2019-05-23
申请号：US16254342
申请日：2019-01-22
Applicant: EPISTAR CORPORATION
Inventor： Min-Hsun HSIEH , Chih-Chiang LU , Ching-Pu TAI
Abstract: A light-emitting device includes a transparent substrate, a transparent adhesive layer on the transparent substrate, a first transparent conductive layer on the transparent adhesive layer, a multi-layer epitaxial structure and a first electrode on the transparent conductive layer, and a second electrode on the multi-layer epitaxial structure. The multi-layer epitaxial structure includes a light-emitting layer. The transparent substrate has a first surface facing the transparent adhesive layer and a second surface opposite to the first surface, wherein the area of the second surface is larger than that of the light-emitting layer, and the area ratio thereof is not less than 1.6.
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公开(公告)号：US20180006206A1
公开(公告)日：2018-01-04
申请号：US15702286
申请日：2017-09-12
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu HUANG , Yao-Ning CHAN , Tzu Chieh HSU , Yi-ming CHEN , Hsin-Chih CHIU , Chih-Chiang LU , Chia-liang HSU , Chun-Hsien CHANG
CPC classification number: H01L33/62 , H01L25/167 , H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/385 , H01L33/48 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066
Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.
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公开(公告)号：US20160218247A1
公开(公告)日：2016-07-28
申请号：US14902795
申请日：2013-07-05
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu HUANG , Yao-Ning CHAN , Tzu Chieh HSU , Yi Ming CHEN , Hsin-Chih CHIU , Chih-Chiang LU , Chia-Liang HSU , Chun-Hsien CHANG
CPC classification number: H01L33/62 , H01L25/167 , H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/385 , H01L33/48 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066
Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.
Abstract translation: 本公开提供一种制造发光器件的方法，其包括在第一衬底上提供第一衬底和多个半导体堆叠块，并且多个半导体堆叠块中的每一个包括第一导电型半导体层， 第一导电型半导体层上的发光层和发光层上的第二导电型半导体层; 其中在所述第一基板上存在分隔两个相邻的半导体层叠块的沟槽，并且所述沟槽的宽度小于10μm; 并且进行第一分离步骤以将多个半导体堆叠块的第一半导体堆叠块与第一衬底分离，并将第二半导体堆叠块保持在第一衬底上。
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公开(公告)号：US20140361319A1
公开(公告)日：2014-12-11
申请号：US14466284
申请日：2014-08-22
Applicant: Epistar Corporation
Inventor： Hsin-Mao LIU , Min-Hsun HSIEH , Tzer-Perng CHEN , Meng-Yuan HONG , Cheng Nan HAN , Tsung-Xian LEE , Ta-Cheng HSU , Chih-Chiang LU
CPC classification number: H01L33/62 , H01L25/167 , H01L27/153 , H01L2924/0002 , H01L2924/00
Abstract: An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.
Abstract translation: 集成照明装置包括：第一控制装置，包括半导体衬底，形成在半导体衬底的第一部分上方的集成电路块;以及形成在集成电路块之上的多个电源焊盘; 形成在所述半导体衬底的第二部分上方的第一发光器件; 以及穿过所述半导体基板的贯穿插头，用于电连接所述第一控制装置和所述第一发光装置。
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Patent Agency Ranking
公开(公告)号：US20130341667A1
公开(公告)日：2013-12-26
申请号：US14011502
申请日：2013-08-27
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu HUANG , Min-Hsun HSIEH , Chih-Chiang LU , Chia-Liang HSU , Shih-I CHEN
IPC: H01L33/62
CPC classification number: H01L33/24 , H01L24/05 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/62 , H01L2224/05552 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.
Abstract translation: 发光装置包括半导体发光叠层; 形成在半导体发光叠层上的电流注入部分; 具有从所述电流注入部分辐射的第一分支的延伸部分和从所述第一分支延伸的第二分支; 所述第二分支和所述半导体发光叠层之间的电接触结构具有第一宽度; 以及位于电接触结构正下方并且具有大于第一宽度的第二宽度的电流阻挡结构。
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公开(公告)号：US20210119078A1
公开(公告)日：2021-04-22
申请号：US17114012
申请日：2020-12-07
Applicant: EPISTAR CORPORATION
Inventor： Yi-Ming CHEN , Hao-Min KU , Chih-Chiang LU , Tzu-Chieh HSU
Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.
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公开(公告)号：US20200287075A1
公开(公告)日：2020-09-10
申请号：US16883742
申请日：2020-05-26
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu HUANG , Chih-Chiang LU , Chun-Yu LIN , Hsin-Chih CHIU
IPC: H01L33/02 , H01L21/66 , H01L33/62 , H01L25/075 , H01L23/00
Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.
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公开(公告)号：US20200066935A1
公开(公告)日：2020-02-27
申请号：US16673312
申请日：2019-11-04
Applicant: EPISTAR CORPORATION
Inventor： Yi-Ming CHEN , Hao-Min KU , Chih-Chiang LU , Tzu-Chieh HSU
Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.
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公开(公告)号：US20190158352A1
公开(公告)日：2019-05-23
申请号：US16258250
申请日：2019-01-25
Applicant: EPISTAR CORPORATION
Inventor： Chih-Chiang LU , Yi-Chieh LIN , Wen-Luh LIAO , Shou-Lung CHEN , Chien-Fu HUANG
IPC: H04L12/24 , H04L12/803
CPC classification number: H04L41/0695 , H01L27/15 , H01L33/005 , H01L33/0062 , H01L33/08 , H01L33/10 , H01L33/50 , H01L33/56 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058 , H01L2933/0066 , H04L41/0668 , H04L41/0816 , H04L47/125 , H01L2924/00014
Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.
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