PACKAGE STRUCTURE OF MEMS MICROPHONE
    1.
    发明申请

    公开(公告)号:US20180054669A1

    公开(公告)日:2018-02-22

    申请号:US15554623

    申请日:2015-12-10

    Applicant: GOERTEK.INC

    Inventor: Guoguang ZHENG

    Abstract: The present invention discloses a package structure of a MEMS microphone. The package structure comprises a package substrate and a package shell, wherein the package shell is provided on the package substrate and forms a closed cavity with the package substrate. In the package structure provided by the present invention, the sound-absorbing layer is arranged on the inner wall of the Helmholtz resonant cavity. The sound-absorbing layer has a certain absorption capacity to high-frequency sound waves, but has a very low absorption to low-frequency sound waves, so it may be equivalent to a “low-pass filter”. Through the absorption of the high-frequency sound waves, a high-frequency amplitude value of sound waves can be suppressed, reducing high-frequency response of the Helmholtz resonant cavity. That is, a high-frequency cut-off frequency of the sound waves is improved, widening operation bandwidth of the MEMS microphone.

    QUASI-DIFFERENTIAL CAPACITIVE MEMS PRESSURE SENSOR AND MANUFACTURING METHODS THEREOF

    公开(公告)号:US20180113040A1

    公开(公告)日:2018-04-26

    申请号:US15559311

    申请日:2015-12-10

    Applicant: GOERTEK.INC

    Inventor: Guoguang ZHENG

    CPC classification number: G01L9/0072 G01L9/12 G01L13/025 G01L19/0618

    Abstract: The present invention discloses a quasi-differential capacitive MEMS pressure sensor and manufacturing methods thereof. The quasi-differential capacitive MEMS pressure sensor includes a first lower electrode, a second lower electrode, a first upper electrode supported above the first lower electrode, and a second upper electrode supported above the second lower electrode, wherein the first upper electrode is a pressure-sensitive film, and a cavity between the first upper electrode and the first lower electrode is a closed cavity, so that the first upper electrode and the first lower electrode constitute an air pressure-sensitive type capacitor; and the second upper electrode and the second lower electrode constitute a reference capacitor whose capacitance does not vary with external air pressure. The pressure sensor provided by the present invention can at least partially filter out a common-mode interference signal in an output signal of the air pressure-sensitive type capacitor by use of the reference capacitor, thereby improving the stability and resolution of the output signal of the air pressure-sensitive type capacitor.

    DIFFERENTIAL-CAPACITANCE TYPE MEMS MICROPHONE

    公开(公告)号:US20180041840A1

    公开(公告)日:2018-02-08

    申请号:US15554633

    申请日:2015-12-10

    Applicant: GOERTEK.INC

    Inventor: Guoguang ZHENG

    Abstract: The present invention discloses a differential-capacitance type MEMS microphone, comprising a circuit board, a first MEMS chip and a second MEMS chip; wherein the first MEMS chip comprises a first substrate disposed on the circuit board, and a first capacitor disposed on the first substrate, the first capacitor comprising a first back pole plate located above, a first vibrating diaphragm located below, and a first isolating layer disposed between the first back pole plate and the first vibrating diaphragm; the second MEMS chip comprises a second substrate disposed on the circuit board, and a second capacitor disposed on the second substrate, the second capacitor comprising a second back pole plate located below, a second vibrating diaphragm located above, and a second isolating layer disposed between the second back pole plate and the second vibrating diaphragm; and the first capacitor and the second capacitor form a pair of differential capacitors.

    MEMS PRESSURE SENSING ELEMENT
    4.
    发明申请

    公开(公告)号:US20180136062A1

    公开(公告)日:2018-05-17

    申请号:US15572072

    申请日:2015-12-10

    Applicant: GOERTEK.INC

    Inventor: Guoguang ZHENG

    CPC classification number: G01L9/0051 G01L9/0064 G01L2009/0066

    Abstract: An MEMS pressure sensing element is disclosed, comprising a substrate with a groove; a pressure-sensitive film on the substrate for sealing an opening of the groove to form a sealed cavity body; and a pressure-sensitive beam suspended in the sealed cavity body and parallel with the pressure-sensitive film provided with varistors, wherein a center of the pressure-sensitive beam is fixedly connected to that of the pressure-sensitive film, and a periphery is fixedly connected to a bottom wall of the groove of the substrate, such that the pressure-sensitive film drives the pressure-sensitive beam to bending deformation under an external pressure.

    MEMS PRESSURE SENSING ELEMENT
    5.
    发明申请

    公开(公告)号:US20180335358A1

    公开(公告)日:2018-11-22

    申请号:US15559647

    申请日:2015-12-10

    Applicant: GOERTEK.INC

    Inventor: Guoguang ZHENG

    Abstract: The present invention discloses an MEMS pressure sensing element, including a substrate provided with a groove; a pressure-sensitive film disposed above the substrate, the pressure-sensitive film sealing an opening of the groove to form a sealed cavity; and a movable electrode plate and a fixed electrode plate which are located in the sealed cavity and form a capacitor structure, wherein the fixed electrode plate is fixed on a bottom wall of the groove of the substrate, and the movable electrode plate is suspended above the fixed electrode plate and opposite to the fixed electrode plate; and the pressure-sensitive film is connected to the movable electrode plate so as to drive the movable electrode plate to move under the action of an external pressure. According to the MEMS pressure sensing element, pressure sensitivity and electrical detection are separated, the pressure-sensitive film is exposed in air, the capacitor structures are disposed in the sealed cavity defined by the pressure-sensitive film and the substrate, and the movable electrode plates of the capacitor structures can be driven by the pressure-sensitive film. In this way, not only is a pressure-sensitive function finished, but also external electromagnetic interferences on the capacitor structures are shielded.

    DIFFERENTIAL CAPACITIVE MEMS PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20180113041A1

    公开(公告)日:2018-04-26

    申请号:US15559331

    申请日:2015-12-10

    Applicant: GOERTEK.INC

    Inventor: Guoguang ZHENG

    Abstract: The present invention discloses a differential capacitive MEMS pressure sensor and a manufacturing method thereof. The MEMS pressure sensor includes a sensitive structural layer, which includes a common sensitive part and a common supporting part located on the edge of the common sensitive part, a thickness of the common supporting part being larger than that of the common sensitive part; and the MEMS pressure sensor also includes an upper fixed electrode structural layer and a lower fixed electrode structural layer which are vertically symmetric relative to the sensitive structural layer and used for forming differential capacitors with the common sensitive part. According to the MEMS pressure sensor of the present invention, by the differential capacitor structures, inhibition of chips on common-mode signals is enhanced, and a signal to noise ratio of output signals is improved. Meanwhile, the thickness of the common supporting part of the present invention is larger than that of the common sensitive part, such that the peripheral common supporting part can shield strains caused by temperatures and stresses. Therefore, the strains transmitted to the common sensitive part because of temperature and stress changes are greatly reduced, and temperature stability and stress stability of the chips are improved.

    PACKAGE STRUCTURE OF MEMS MICROPHONE
    7.
    发明申请

    公开(公告)号:US20180048951A1

    公开(公告)日:2018-02-15

    申请号:US15554980

    申请日:2015-12-10

    Applicant: GOERTEK.INC

    Inventor: Guoguang ZHENG

    CPC classification number: H04R1/04 H04R19/005 H04R19/04 H04R31/00 H04R2201/003

    Abstract: The present invention discloses a package structure of a MEMS microphone. The package structure comprises a closed inner cavity formed by a package shell in a surrounding manner, as well as a MEMS chip and an ASIC chip which are located in the closed inner cavity, wherein a sound hole allowing sound to flow into the closed inner cavity is formed in the package shell; the MEMS chip comprises a substrate as well as a vibrating diaphragm and a back plate which are provided on the substrate; the vibrating diaphragm divides the closed inner cavity into a front cavity and a back cavity; and a sound-absorbing structure is provided in the back cavity.

    INTEGRATED STRUCTURE OF MEMS PRESSURE SENSOR AND MEMS INERTIA SENSOR

    公开(公告)号:US20180044174A1

    公开(公告)日:2018-02-15

    申请号:US15554652

    申请日:2015-12-14

    Applicant: Goertek.Inc

    Inventor: Guoguang ZHENG

    Abstract: The present invention discloses a integrated structure of an MEMS pressure sensor and an MEMS inertia sensor, comprising: an insulating layer formed on a substrate, a first lower electrode and a second lower electrode both formed on the insulating layer, further comprising a first upper electrode forming an air pressure-sensitive capacitor together with the first lower electrode, and a second upper electrode forming a reference capacitor together with the second lower electrode; further comprising an inertia-sensitive structure supported above the substrate by a third support part, and a fixed electrode plate forming an inertia detecting capacitor of an inertia sensor together with the inertia-sensitive structure; and a cover body which packages the inertia detecting capacitor composed of the inertia-sensitive structure and the fixed electrode plate on the substrate. The integrated structure according to the present invention integrates the MEMS inertia sensor and the MEMS pressure sensor on the same substrate, which may effectively reduce the area of the chip, so as to reduce the cost of the chip. Single packaging may complete the packaging of the entire chip and reduce the cost of the chip packaging.

    MEMS MICROPHONE ELEMENT AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20180041842A1

    公开(公告)日:2018-02-08

    申请号:US15554942

    申请日:2015-12-10

    Applicant: GOERTEK.INC

    Inventor: Guoguang ZHENG

    Abstract: The present invention discloses a MEMS microphone element, comprising a base, the base being provided with a first opening and a second opening which run through from top to bottom; and a first capacitor and a second capacitor disposed on the base in parallel, the first capacitor being disposed on the first opening, and the second capacitor being disposed on the second opening, wherein the first capacitor comprises a first back pole plate located below, and a first vibrating diaphragm located above and opposite to the first back pole plate, the second capacitor comprises a second back pole plate located above, and a second vibrating diaphragm located on below and opposite to the second back pole plate; and the first capacitor and the second capacitor form a pair of differential capacitors together.

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