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公开(公告)号:US3548491A
公开(公告)日:1970-12-22
申请号:US3548491D
申请日:1968-11-14
Applicant: IBM
Inventor: AINSLIE NORMAN G , CHHABRA DEVENDRA S , JEPSEN DONALD W , MUTTER WALTER E
CPC classification number: H01L21/78 , H01B13/00 , H01L21/00 , H01L27/00 , Y10T29/49758
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公开(公告)号:US3474530A
公开(公告)日:1969-10-28
申请号:US3474530D
申请日:1967-02-03
Applicant: IBM
Inventor: AINSLIE NORMAN G , CHHABRA DEVENDRA S , JEPSEN DONALD W , MUTTER WALTER E
CPC classification number: H01L21/78 , H01B13/00 , H01L21/00 , H01L27/00 , Y10S438/927 , Y10T29/49004
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公开(公告)号:US3695855A
公开(公告)日:1972-10-03
申请号:US3695855D
申请日:1970-01-08
Applicant: IBM
Inventor: AINSLIE NORMAN G , CHEROFF GEORGE , JUNCTION HOPEWELL , GRAFF WILLIAM S , HOWARD JAMES KENT , ROSS RUPERT F
CPC classification number: H01L21/00 , H01L21/28 , H05K1/09 , Y10S428/929 , Y10S428/938 , Y10T29/49004 , Y10T428/12396 , Y10T428/12458 , Y10T428/12486 , Y10T428/12528 , Y10T428/12847 , Y10T428/12903
Abstract: THIS INVENTION PROVIDES A MEANS OF INCREASING THE TIMETO-FAILURE OF DOPED CONDUCTIVE STRIPES BY DEPOSITING REGIONS OF DOPANT REJUVENANT UPON REGIONS IN THE STRIPE WHEREIN DOPANT DEPLETION IS MOST APT TO OCCUR UNDER CURRENT STRESS. THIS INVENTION ALSO PROVIDES A MEANS OF REJUVENATING REGIONS WHEREIN DOPANT DEPLETION HAS OCCURRED BY PERIODICALLY APPLYING HEAT TO A MICROELECTONIC CONFIGURATION CONTAINING DOPED CONDUCTIVE THIN FILMS FOR INTERCONNECTION PURPOSES, SAID THIN FILMS CONTAINING LOCAL, DISCONTINUOUS DEPOSITS OF DOPANT REJUVENANT OVER REGIONS WITHIN THE FILM WHEREIN TEMPERATURE GRADIENTS OR DIFFUSION BARRIERS ARISE UNDER CURRENT STRESS RESULTING IN MASS FLUX DIVERGENCES IN SAID REGIONS, I.E., A RESULTANT EFFLUX OF DOPANT FROM SAID REGION. APPLICATION OF HEAT IN THIS MANNER PERMITS DIFFUSION OF DOPANT REJUVENANT FROM THE LOCALIZED DOPANT REJUVENANT SOURCE INTO THE REGION FROM WHICH DOPANT HAS MIGRATED DURING SERVICE, THEREBY REJUVENATING THE MICROELECTRONIC CONFIGURATION AND ENABLING ITS CONTINUED USE.
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公开(公告)号:US3353912A
公开(公告)日:1967-11-21
申请号:US18097062
申请日:1962-03-20
Applicant: IBM
Inventor: AINSLIE NORMAN G
CPC classification number: C30B29/42 , C01B25/06 , C22C1/007 , C30B11/065 , C30B29/40 , H01L21/00 , Y10S148/107 , Y10S420/903
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公开(公告)号:FR2293061A1
公开(公告)日:1976-06-25
申请号:FR7530729
申请日:1975-10-01
Applicant: IBM
Inventor: AINSLIE NORMAN G
IPC: H01L23/12 , H01L23/055 , H01L23/28 , H01L23/31 , H01L25/065 , H05K5/06 , H01L21/98
Abstract: A corrosion-resistant electrical structural element has ceramic platelets contg. integrated circuits which are arranged on a metallic circuit pattern upon the surface of an insulating panel fitted with contact pins. A dielectric layer (27, 28) is applied onto the surface of the insulating panel (20) contg. the ceramic platelets (25) and the circuit patterns (24). The dielectric layer contains at least in parts a suspension of one of the metals of the circuit patterns. The particle size of the suspension is such that the dielectric characteristics of the layer are not affected. The article is inert to corrosive environment especially S-contg. vapours, ensuring its trouble-free use in electrical engineering applications.
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公开(公告)号:DE3778290D1
公开(公告)日:1992-05-21
申请号:DE3778290
申请日:1987-10-06
Applicant: IBM
Inventor: AINSLIE NORMAN G , BREDE DWIGHT W , ERPELDING A DAVID , PATTANAIK SURYA
Abstract: In a data recording disk file a slider (16) is mechanically attached to the suspension (40) by means of reflowed solder balls (80). A pattern of solder contact pads (70) is formed on the back side of the slider and a similar pattern of solder-wettable regions (60,61,63) is formed on the suspension. Solder balls are formed on either the solder contact pads or the solder-wettable regions, the slider is located on the suspension so that the solder balls are in registration between the solder contact pads and solder-wettable regions, and the solder is heated to reflow, thereby forming solder joints (80,86) as a mechanical connection between the slider and suspension. When a thin film transducer (11,13) is formed on the slider trailing edge (26) and the suspension is a laminated type with patterned conductors (46,55), solder balls are also formed on the transducer lead terminations (19,21; 27,29) on the trailing edge and on a row of solder-wettable regions (61,63) on the suspension near the location where the trailing edge of the slider is to be located. In this embodiment, when the slider with thin film transducer, with solder balls on the lead terminations, is located over the suspension then all of the solder balls are heated. The solder balls for providing mechanical connection collapse during reflow, thereby causing the solder balls on the transducer lead terminations to come in contact with and flow together with the solder balls formed on the row of solder-wettable regions on the suspension. Thus the mechanical attachment of the slider is made simultaneously with the electrical connection of the transducer leads to the disk file read/write electronics.
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公开(公告)号:CA902254A
公开(公告)日:1972-06-06
申请号:CA902254D
Applicant: IBM
Inventor: AINSLIE NORMAN G , CHHABRA DEVENDRA S , MUTTER WALTER E , JEPSEN DONALD W
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公开(公告)号:DE3777072D1
公开(公告)日:1992-04-09
申请号:DE3777072
申请日:1987-10-06
Applicant: IBM
Inventor: AINSLIE NORMAN G , BRUSIC VLASTA A , CHAPMAN DANIEL W , ROMANKIW LUBOMYR T , WILMER RICHARD K
Abstract: A thin film magnetic read/write head/arm assembly and method of manufacturing the same is disclosed herein. Contact soldering (37) of the opposite to disk side of the read/write head (35) to a cable (33) in laminate relationship to the suspension arm (31), or a polyimide strip with conductors deposited thereon provides both electrical interconnection and mechanical support. Semiconductor devices (40) can also be intermediately soldered between the head and cable for maximum noise suppression.
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公开(公告)号:FR2342547A1
公开(公告)日:1977-09-23
申请号:FR7700649
申请日:1977-01-05
Applicant: IBM
Inventor: AINSLIE NORMAN G , HEMPSTEAD ROBERT D , TAN SWIE-IN , VALSTYN ERICH P
IPC: C22C38/00 , C23C14/40 , G11B5/147 , G11B5/31 , H01F10/14 , H01F41/14 , H01F41/18 , H01F10/02 , G11B5/62
Abstract: Iron-silicon is sputtered onto a substrate to be used for a magnetic recording head from a target containing 4% to 7% of silicon with a substrate bias between -2.5 and -60 volts, anode-cathode spacing of about 1/2 to about 2 inches, a deposition rate of greater than 150A/min, a substrate temperature above 250 DEG C, an argon pressure above 10 microns, and a single film thickness greater than 0.4 micron, a laminated film thickness greater than 0.05 micron, and R.F. input power above 8 watts/in2.
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