公开(公告)号：EP2510538A4

公开(公告)日：2014-03-26

申请号：EP10836729

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  NUNES RONALD W

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/31133 ,  G03F7/423

公开(公告)号：WO2011072188A3

公开(公告)日：2011-09-15

申请号：PCT/US2010059800

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM ,  AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL

IPC: H01L21/3063

CPC classification number: H01L21/31133 ,  G03F7/423

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

Abstract translation: 提出了用于去除掩模材料（例如光致抗蚀剂）的方法以及通过去除掩模材料形成的电子器件。 例如，用于去除掩蔽材料的方法包括使掩蔽材料与包含铈和至少一种另外的氧化剂的溶液接触。 铈可以包含在盐中。 盐可以是硝酸铈铵。 该至少一种另外的氧化剂可以是锰，钌和/或含锇化合物。

公开(公告)号：CA1225363A

公开(公告)日：1987-08-11

申请号：CA460823

申请日：1984-08-10

Applicant: IBM

Inventor： BAUM THOMAS H ,  HOULE FRANCES A ,  JONES CAROL R

IPC: H05K3/14 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C23C16/48

Abstract: PHOTOCHEMICAL CONVERSION OF SiO TO SiO2 SiO can be photochemically converted to SiO2 by irradiation with ultraviolet light of wavelengths less than 220 nm in an atomosphere including oxygen. The irradiation can be pulsed or continuous radiation, and energy fluences of at least about 5 mJ/cm2 will effect the photochemical reaction. The conversion of SiO to SiO2 can be used to provide an etch-stop in a fabrication process and to provide improved devices and circuits, in technologies such as Josephson and semiconductor device technologies.

公开(公告)号：SG181642A1

公开(公告)日：2012-07-30

申请号：SG2012042941

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

公开(公告)号：CA2090038A1

公开(公告)日：1992-04-25

申请号：CA2090038

申请日：1991-01-23

Applicant: IBM

Inventor： BAUM THOMAS H ,  LARSON CARL E ,  REYNOLDS SCOTT K

IPC: C07F1/08 ,  C07F1/10 ,  C07F9/02 ,  C07F9/50 ,  C07F15/00 ,  C23C16/18 ,  C23C16/48 ,  C23C16/50 ,  H01L21/285 ,  H05K3/40 ,  C07F1/00 ,  B05D3/00 ,  C23C4/02 ,  B01J19/12

Abstract: 2090038 9207971 PCTABS00013 Chemical vapor deposition precursors for depositing copper, silver, rhodium and iridium metals on substrates comprise ligand stabilized +1 metal beta-diketonate coordination complexes of said metals. Uses of such precursors in CVD processes are also provided.

公开(公告)号：AU569753B2

公开(公告)日：1988-02-18

申请号：AU3266784

申请日：1984-09-03

Applicant: IBM

Inventor： BAUM THOMAS H ,  HOULE FRANCES ANNE ,  JONES CAROL R

IPC: H05K3/14 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C23C11/02

公开(公告)号：AU3266784A

公开(公告)日：1985-03-21

申请号：AU3266784

申请日：1984-09-03

Applicant: IBM

Inventor： BAUM THOMAS H ,  HOULE FRANCES ANNE ,  JONES CAROL R

IPC: H05K3/14 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C23C11/02