公开(公告)号：GB2502574A

公开(公告)日：2013-12-04

申请号：GB201209674

申请日：2012-05-31

Applicant: IBM

Inventor： ROTHUIZEN HUGO E ,  DELLMANN LAURENT A ,  ENGELEN JOHAN B C ,  FURRER SIMEON ,  LANTZ MARK ALFRED

IPC: G11B5/265

Abstract: A write head 108 comprises a yoke 110 having at least a first and a second gap 112, 114 and a coil 116 for producing a magnetic field at each gap. The coil comprises a plurality of windings 118, 120 which are arranged to produce the same magnetic field strength at each gap and/or along each gap by use of a proximity effect between the windings and a respective gap. Gaps may be arranged symmetrically about a first line 214 and the windings 209, 209, 213, 213 can be arranged in a pattern symmetrically about a second line 212 where the first and second lines are offset from each other. The distance between neighboring winding portions may vary and the windings may be non-parallel to each other. The write head can be used for writing servo patterns on magnetic tape.

公开(公告)号：GB2515051A

公开(公告)日：2014-12-17

申请号：GB201310445

申请日：2013-06-12

Applicant: IBM

Inventor： JONNALAGADDA VARAD PRASAD ,  DELLMANN LAURENT A ,  ENGELEN JOHAN B C ,  LANTZ MARK ALFRED

IPC: G11B5/187 ,  G11B5/255

Abstract: A tape head 1g has a tape-bearing surface 21 configured, in operation, to urge a magnetic tape against the bearing surface. The bearing surface comprises a transducer area 44 having at least one transducer 40 that is a read and/or write element, and a structured area 50u, 50d, 52l, 52r adjacent to the transducer area comprising a periodic array of protruding topographic features. The topographic features configured to determine a minimal distance between the transducer area and a tape. The tape bearing surface can comprise different structured areas having different topographic features or areas without topographic features. The topographic features may have a diameter between 100 and 5000 nm with a distance between the features of 1 and 20 micrometres. A layer of material, such as FeN, TiN, SiN, diamond like carbon, or aluminium oxide, may be deposited on top of the features.

公开(公告)号：GB2506410A

公开(公告)日：2014-04-02

申请号：GB201217389

申请日：2012-09-28

Applicant: IBM

Inventor： DELLMANN LAURENT A ,  DESPONT MICHEL ,  GROGG DANIEL ,  SEBASTIAN ABU

IPC: H01H1/00

Abstract: A nanoelectromechanical NEM switch comprises two electrodes 12, 18. At least one of the electrodes 18 has an active layer 10 thereon and one of the electrodes 12 is movable along a direction z, to a position where it contacts the other electrode 18 at a contact point P. The active layer exhibits a conductive pathway 16 which extends in direction z to enable conduction between the electrodes in position P and is confined to a region R1 of the active layer having nano-scale dimensions in a plane x, y perpendicular to direction z. The active layer on one electrode can comprise a protrusion (fig 8, 16p) in region R1 that protrudes towards the other electrode. The active layer can be resistive and the conductive path 16 extend through the layer in direction z in region R1,which can be contiguous with a surrounding region R2 having no conductive pathway. The properties of region R1 can be characteristic of a conditioning process comprising application of voltage or current pulses whilst the contacts are closed. The active layer can comprise several layers of materials including metallic layers and materials such as amorphous, diamond-like, hydrogenated or doped carbon; a phase-change material such as GeSbTe or GeTe or an oxide of Hf, W, Ta, Ti, Si or Zr.

公开(公告)号：GB2516841A

公开(公告)日：2015-02-11

申请号：GB201313718

申请日：2013-07-31

Applicant: IBM

Inventor： ELEFTHERIOU EVANGELOS STAVROS ,  MARCHIORI CHIARA ,  SANTINI CLAUDIA ,  SEBASTIAN ABU ,  DELLMANN LAURENT A

IPC: G11C13/00 ,  C23C16/26 ,  G11C11/56 ,  H01L45/00

Abstract: A resistive memory element preferably a resistive read only memory element (RRAM), comprising a resistively switchable material 14 coupled to two conductive electrodes 12, 16, wherein the resistively switchable material 14 is an amorphous compound comprising 5 carbon and oxygen, the C:O stoichiometric ratio being a range of 1:0.30 to 1:0.80 and preferably in the range 1:0.4 to 0:0.6. The properties of the switching material are determined by the presence of the sp2 bonds which are conducting and the sp3 bonds which are insulating. Preferably the ratio of C-C sp2 bonds to C-C sp3 bonds in the resistively switching material is less than 0.4 preferably less than 0.2 or 0.1 . The resistively switching material may be doped with silicon, hydrogen of nitrogen and may be of thickness 2nm to 30nm. The electrodes may consist of differing materials in contact with the resistively switching material and made from Tungsten, Platinum, graphite, graphene and aluminium. The resistive memory element may comprise a patterned SiO2 insulating layer over an electrode (12, figure 3) to form a cavity enabling a conformal layer of restively switching material to be formed (14, figure 3). Programming of storage information is achieved by a method of applying a voltage pulse between the conductive electrodes and can be unipolar or bipolar. The fabrication process includes a method whereby reactive sputtering in a chamber comprising a graphite target in the presence of oxygen O2 and Argon Ar gases in a plasma state such that oxygenated amorphous material (a-C:O ) is deposited on the conductive electrode 12 (see figure 4).

公开(公告)号：GB2513572A

公开(公告)日：2014-11-05

申请号：GB201307697

申请日：2013-04-29

Applicant: IBM

Inventor： ENGELEN JOHAN B C ,  FURRER SIMEON ,  DELLMANN LAURENT A ,  ROTHUIZEN HUGO E ,  LANTZ MARK ALFRED

IPC: G11B15/64

Abstract: A tape head 1 comprises a tape bearing surface 11, shaped to form an air bearing 40, a thermal tape-head distance sensor circuit adapted to sense heat dissipated at the level of the tape bearing surface by the tape and thereby sense a distance d between the tape bearing surface and the tape. A tape-head distance control means 22 controls the bearing surface to tape distance according to a signal received from the tape-head distance sensor circuit. Closed loop feedback control can be used and the tape bearing surface may have non-skiving edges. The tape head to tape distance may be controlled with electrostatic attractors 24. The tape head may include a heater element 16 and heating circuit 13 to provide constant power to the heating circuit. The heating element may also be a resistance temperature detector which is thermally insulated from the tape bearing surface surrounding it by an air gap.

公开(公告)号：GB2503482A

公开(公告)日：2014-01-01

申请号：GB201211469

申请日：2012-06-28

Applicant: IBM

Inventor： DELLMANN LAURENT A ,  ENGELEN JOHAN B C ,  FURRER SIMEON ,  LANTZ MARK ALFRED ,  ROTHUIZEN HUGO E

IPC: G11B15/62

Abstract: A tape head system comprises a read and/or write head 102 having at least one read and/or write element 104 for reading from and/or writing to magnetic tape 112 and at least one electrostatic element 106, 108 arranged adjacent to the read and/or write element. A controller 122 applies a potential 118, 120 to the at least one electrostatic element. A voltage applied to the electrostatic element may be dynamically controlled to maintain a spacing d1, d2, d3, d4. The voltage may be applied so that the magnetic tape contacts the head along a first section 130 and is spaced apart from the head along a second section 138 by an air bearing 132. The head system may include a tensioning unit 128. The electrostatic elements may be formed metal islands integrated into the head surface.