公开(公告)号：DE3573044D1

公开(公告)日：1989-10-19

申请号：DE3573044

申请日：1985-03-13

Applicant: IBM

Inventor： FREDERICKS EDWARD CARMINE ,  GREENHAUS HERBERT LOUIS ,  NANDA MADAN MOHAN ,  VIA GIORGIO GIULIO

IPC: G03F7/095 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027 ,  H01L21/312

Abstract: @ A photoresist photolithographic process is disclosed which provides for a single development step to develop a dual layer photoresist for lift-off, reactive ion etching, or ion implantation processes requiring a precise aperture size at the top of the photoresist layer.The process involves the deposition of two compositionally similar layers, with the first layer having the characteristic of being soluble in a developer after exposure to light and baking, and the second layer having the characteristic of being insoluble in the same developer after having been exposed to light and baked. With these two distinct characteristics for the two layers of photoresist, the effective aperture for windows in the composite photoresist can be tightly controlled in its cross-sectional dimension in the face of large variations in the developer concentration and devel- opmenttime.

公开(公告)号：DE2861132D1

公开(公告)日：1981-12-17

申请号：DE2861132

申请日：1978-07-10

Applicant: IBM

Inventor： CHIU GEORGE TEIN-CHU ,  FREDERICKS EDWARD CARMINE

IPC: G03F7/00 ,  G03F7/40 ,  H01L21/027 ,  G03F7/26

Abstract: Resist images are hardened so that they are flow resistant at elevated temperatures by coating the image with a layer of a quinone-diazide hardening agent and heating the image to cause the agent to react with the resist and form a hardened image.

公开(公告)号：DE3677236D1

公开(公告)日：1991-03-07

申请号：DE3677236

申请日：1986-02-18

Applicant: IBM

Inventor： FREDERICKS EDWARD CARMINE ,  VIA GIORGIO GIULIO

IPC: H01L21/3205 ,  G03F7/09 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027 ,  H01L21/312 ,  H01L21/3213 ,  H01L21/768

公开(公告)号：DE3473531D1

公开(公告)日：1988-09-22

申请号：DE3473531

申请日：1984-12-11

Applicant: IBM

Inventor： FREDERICKS EDWARD CARMINE ,  KOTECHA HARISH N

IPC: H01L21/306 ,  H01L21/027 ,  H01L21/265 ,  H01L21/266 ,  H01L21/312 ,  H01L21/316 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/00

公开(公告)号：DE3679583D1

公开(公告)日：1991-07-11

申请号：DE3679583

申请日：1986-03-25

Applicant: IBM

Inventor： FREDERICKS EDWARD CARMINE ,  KELLY KATHLEEN ANN ,  STANASOLOVICH DAVID

IPC: G03F1/00 ,  G03F1/08 ,  G03F7/26 ,  H01L21/027 ,  G03F7/075

公开(公告)号：DE2743763A1

公开(公告)日：1978-04-06

申请号：DE2743763

申请日：1977-09-29

Applicant: IBM

Inventor： FREDERICKS EDWARD CARMINE

IPC: G03F7/004 ,  C08F20/00 ,  C08F20/22 ,  C09D133/10 ,  C23C18/16 ,  C23C18/31 ,  C23F1/00 ,  C25D5/02 ,  G03F7/039 ,  G03F7/38 ,  H05K3/18 ,  G03F7/02

Abstract: A positive relief image is produced by coating a substrate with a layer of a copolymer containing about 90-98 mole percent of polymerized lower alkyl methacrylate units and about 2-10 mole percent of polymerized lower haloalkyl methacrylate units, heating the layer to cause cross-linking between polymer chains by removal of hydrogen halide, patternwise exposing the layer with high energy radiation such as a scanning electron beam, and removing the exposed portion of the layer with a solvent developer.