公开(公告)号：FR2329070A1

公开(公告)日：1977-05-20

申请号：FR7626315

申请日：1976-08-25

Applicant: IBM ,  IBM

Inventor： HOWARD JAMES K ,  JAMES K HOWARD ET PAUL S HO ,  HO PAUL S

IPC: A01K1/01 ,  G11C11/14 ,  B41J2/335 ,  C22C21/00 ,  C23C14/00 ,  C23C14/16 ,  C23C14/58 ,  G11B5/31 ,  H01B1/02 ,  H01F10/06 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L29/43 ,  H05K1/09 ,  H01L21/72

公开(公告)号：CA1257786A

公开(公告)日：1989-07-25

申请号：CA498313

申请日：1985-12-20

Applicant: IBM

Inventor： FOUTS DAVID P ,  GUPTA DEVANDRA ,  HO PAUL S ,  JASPAL JASVIR S ,  LLOYD JAMES R JR ,  OBERSCHMIDT JAMES M ,  SRIKRISHNAN KRIS V ,  SULLIVAN MICHAEL J

IPC: B23K1/00 ,  B23K35/26 ,  C22C1/00 ,  C22C11/06 ,  H01B1/02 ,  H01B13/00 ,  C22C30/04

Abstract: ELECTROMIGRATION LIFETIME INCREASE OF LEAD BASE ALLOYS Electromigration activity is decreased and lifetime is extended in solder stripes employed as conductors and terminals on microelectronic devices by forming an alloy of a solute element, such as copper, with tin in a lead/tin solder and providing a substantially uniform distribution of particles of the intermetallic compound in the solder. The concentration of the solute element is maintained at less than about three times the tin concentration and less than about 10% of the amount of the solder.

公开(公告)号：CA1292965C

公开(公告)日：1991-12-10

申请号：CA507433

申请日：1986-04-24

Applicant: IBM

Inventor： CLABES JOACHIM G ,  HAHN PETER O ,  HO PAUL S ,  LEFAKIS HARALAMBOS ,  RUBLOFF GARY W

IPC: C08J7/06 ,  C08J7/18 ,  C23C14/02 ,  C23C14/20

Abstract: Y09-85-014 A technique is described for improving metal-organic substrate adhesion and for reducing stress between the metal film and the substrate. Beams of low energy reactive ions, electrons, or photons are incident upon the substrate to alter the surface chemistry of the substrate to a depth of from about 10 angstroms to a few hundred angstroms. The energy of the incident reactive ions and electrons is about 50-2000eV, while the energy of the incident photons is about 0.2 - 500eV. Irradiation of the substrate can occur prior to or during metal deposition. For simultaneous metal deposition/particle irradiation, the arrival rates of the metal atoms and the substrate treatment particles are within a few order of magnitude of one another. Room temperature or elevated temperatures are suitable.

公开(公告)号：CA1276088C

公开(公告)日：1990-11-13

申请号：CA498399

申请日：1985-12-20

Applicant: IBM

Inventor： HO PAUL S ,  HAHN PETER O ,  LEFAKIS HARRY ,  RUBLOFF GARY W

IPC: C23C14/02 ,  C23C14/20 ,  C23C14/58 ,  H01L21/48 ,  H01L23/14 ,  H05K3/14 ,  H05K3/16 ,  H05K3/38 ,  C23C14/34 ,  B05D3/00 ,  B05D7/04

Abstract: ENHANCED ADHESION BETWEEN METALS AND POLYMERS A technique is described for increasing the adhesion between metals and organic substrates, where the metals are those which normally only very weakly bond to the substrate. These metals include Ni, Cu, Al, Ag, Au, Ta, Pt, Ir, Rh, Pd, Zn, and Cd. The organic substrates include mylar, polyimides, polyesters, plastics, polyethylene, polystyrene, etc. Enhanced adhesion occurs when intermixing, between the depositing metal atoms and the substrate is optimized to a depth less than about 1000 angstroms into the substrate. This occurs in a critical substrate temperature range of about (0.6-0.8) Tc, where Tc is the curing temperature of the substrate. The deposition rate of the metal atoms is chosen such that the arrival rate of the metal atoms at the surface of the substrate is comparable to or less than the rate of diffusion of metal atoms into the substrate. This provides optimum intermixing and maximum adhesion.

公开(公告)号：CA1056511A

公开(公告)日：1979-06-12

申请号：CA263822

申请日：1976-10-20

Applicant: IBM

Inventor： HOWARD JAMES K ,  HO PAUL S

IPC: G11C11/14 ,  A01K1/01 ,  B41J2/335 ,  C22C21/00 ,  C23C14/00 ,  C23C14/16 ,  C23C14/58 ,  G11B5/31 ,  H01B1/02 ,  H01F10/06 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L29/43 ,  H05K1/09 ,  H05K3/02

Abstract: INTERMETALLIC LAYERS IN THIN FILMS FOR IMPROVED ELECTROMIGRATION RESISTANCE A method and resulting structure for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200.degree.C and 525.degree.C for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6x10-4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.