公开(公告)号：DE3936579A1

公开(公告)日：1990-10-11

申请号：DE3936579

申请日：1989-11-03

Applicant: AVX CORP ,  IBM

Inventor： GALVAGNI JOHN ,  OBERSCHMIDT JAMES M ,  HUMENIK JAMES N

IPC: H01G4/12 ,  B24B1/00 ,  H01G20060101 ,  H01G4/228 ,  H01G4/232 ,  H01G4/30

Abstract: An improved method for forming shorting bars on ceramic capacitors of the tab type includes the step of effecting a final polishing of the tab exposed surface utilizing grit or abrasives of a critical size, namely of average particle size in the range of about 2 to about 10 microns. The method further employs thin film metallurgy namely the vacuum deposition or sputtering of one or more layers within specified thickness ranges. There is further disclosed an improved capacitor fabricated in accordance with the method described.

公开(公告)号：FR2645337A1

公开(公告)日：1990-10-05

申请号：FR8914864

申请日：1989-11-13

Applicant: AVX CORP ,  IBM

Inventor： GALVAGNI JOHN ,  OBERSCHMIDT JAMES M ,  HUMENIK JAMES N

IPC: H01G4/12 ,  B24B1/00 ,  H01G20060101 ,  H01G4/228 ,  H01G4/232 ,  H01G4/30

Abstract: An improved method for forming shorting bars on ceramic capacitors of the tab type includes the step of effecting a final polishing of the tab exposed surface utilizing grit or abrasives of a critical size, namely of average particle size in the range of about 2 to about 10 microns. The method further employs thin film metallurgy namely the vacuum deposition or sputtering of one or more layers within specified thickness ranges. There is further disclosed an improved capacitor fabricated in accordance with the method described.

公开(公告)号：CA1290414C

公开(公告)日：1991-10-08

申请号：CA595452

申请日：1989-03-31

Applicant: IBM

Inventor： ARNOLD ALLEN J ,  BARIETHER MICHAEL E ,  CHIANG SHIN-WU ,  DALAL HORMAZDYAR M ,  MILLER ROBERT A ,  MONTEGARI FRANK A ,  OBERSCHMIDT JAMES M ,  SHEN DAVID T

IPC: H01G4/12 ,  H01G4/30 ,  H01G1/005 ,  H01G1/147

Abstract: Disclosed is a multilayer capacitor consisting of a plurality of laminae with each of the laminae including a conductive plate portion and a non-conductive sheet portion. The conductive plate portion has at least one tab projecting to at least one edge of the conductive plate portion with the maximum number of tabs per conductive plate portion being limited to avoid excessive lateral congestion. The laminae are divided into different groups with the laminae from each group having the same number and location of tabs and with the laminae from different groups differing by at least the location of the tabs. The laminae are interleaved so that: (a) a lamina from one group alternates with a lamina from a different group, (b) the conductive plate portion of each lamina is in contact with the non-conductive sheet portion of each adjacent lamina, (c) the tabs are at a common edge of each lamina so that the tabs of the interleaved laminae form rows of tabs, and (d) the tabs from adjacent laminae are not in registry with each other. The capacitor finally includes islands of metallurgy joining selected groups of tabs in each row such that each of the islands covers a portion of each row of tabs. FI9-88-005

公开(公告)号：CA1257786A

公开(公告)日：1989-07-25

申请号：CA498313

申请日：1985-12-20

Applicant: IBM

Inventor： FOUTS DAVID P ,  GUPTA DEVANDRA ,  HO PAUL S ,  JASPAL JASVIR S ,  LLOYD JAMES R JR ,  OBERSCHMIDT JAMES M ,  SRIKRISHNAN KRIS V ,  SULLIVAN MICHAEL J

IPC: B23K1/00 ,  B23K35/26 ,  C22C1/00 ,  C22C11/06 ,  H01B1/02 ,  H01B13/00 ,  C22C30/04

Abstract: ELECTROMIGRATION LIFETIME INCREASE OF LEAD BASE ALLOYS Electromigration activity is decreased and lifetime is extended in solder stripes employed as conductors and terminals on microelectronic devices by forming an alloy of a solute element, such as copper, with tin in a lead/tin solder and providing a substantially uniform distribution of particles of the intermetallic compound in the solder. The concentration of the solute element is maintained at less than about three times the tin concentration and less than about 10% of the amount of the solder.

公开(公告)号：GB2230140B

公开(公告)日：1994-04-27

申请号：GB8921195

申请日：1989-09-19

Applicant: AVX CORP ,  IBM

Inventor： GALVAGNI JOHN ,  OBERSCHMIDT JAMES M ,  HUMENIK JAMES N

IPC: H01G4/12 ,  B24B1/00 ,  H01G20060101 ,  H01G4/228 ,  H01G4/232 ,  H01G4/30

Abstract: An improved method for forming shorting bars on ceramic capacitors of the tab type includes the step of effecting a final polishing of the tab exposed surface utilizing grit or abrasives of a critical size, namely of average particle size in the range of about 2 to about 10 microns. The method further employs thin film metallurgy namely the vacuum deposition or sputtering of one or more layers within specified thickness ranges. There is further disclosed an improved capacitor fabricated in accordance with the method described.

公开(公告)号：GB2230140A

公开(公告)日：1990-10-10

申请号：GB8921195

申请日：1989-09-19

Applicant: AVX CORP ,  IBM

Inventor： GALVAGNI JOHN ,  OBERSCHMIDT JAMES M ,  HUMENIK JAMES N

IPC: H01G4/12 ,  B24B1/00 ,  H01G20060101 ,  H01G4/228 ,  H01G4/232 ,  H01G4/30

Abstract: An improved method for forming shorting bars on ceramic capacitors of the tab type includes the step of effecting a final polishing of the tab exposed surface utilizing grit or abrasives of a critical size, namely of average particle size in the range of about 2 to about 10 microns. The method further employs thin film metallurgy namely the vacuum deposition or sputtering of one or more layers within specified thickness ranges. There is further disclosed an improved capacitor fabricated in accordance with the method described.