公开(公告)号：WO2011005447A2

公开(公告)日：2011-01-13

申请号：PCT/US2010039007

申请日：2010-06-17

Applicant: IBM ,  DE SOUZA JOEL ,  HOVEL HAROLD ,  INNS DANIEL ,  KIM JEE ,  SADANA DEVENDRA

Inventor： DE SOUZA JOEL ,  HOVEL HAROLD ,  INNS DANIEL ,  KIM JEE ,  SADANA DEVENDRA

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/072 ,  H01L31/078

CPC classification number: H01L31/1872 ,  H01L31/03921 ,  H01L31/068 ,  H01L31/078 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor is disclosed with a substrate doped with a substrate doping. There is a crystalline semiconductor layer disposed on a front side of the substrate. The crystalline semiconductor layer has a layer doping. The substrate doping changes to the layer doping within a 100 angstrom transition region. In alternative embodiments, the layer doping has novel profiles. In other alternative embodiments, the substrate has a crystalline semiconductor layers disposed on each of a front and a back side of the substrate. Each of the crystalline semiconductor layers has a respective layer doping and each of these layer dopings changes to the substrate doping within a respective transition region less than 100 angstroms thick. In still other embodiments of this invention, an amorphous silicon layer is disposed on a side of the crystalline semiconductor layer opposite the substrate. The amorphous silicon layer has an amorphous doping so that a tunnel junction is formed between the doped crystalline semiconductor layer and the amorphous layer. Manufacturing these structures at below 700 degrees Centigrade enables the narrow transition regions of the structures.

Abstract translation: 公开了一种掺杂有衬底掺杂的衬底的半导体。 在衬底的正面上设置有晶体半导体层。 晶体半导体层具有层掺杂。 衬底掺杂改变为在100埃过渡区内的层掺杂。 在替代实施例中，层掺杂具有新颖的轮廓。 在其他替代实施例中，衬底具有布置在衬底的前侧和后侧中的每一个上的晶体半导体层。 每个晶体半导体层具有相应的层掺杂并且这些层掺杂中的每一个都变为在小于100埃厚的相应过渡区域内的衬底掺杂。 在本发明的其他实施例中，非晶硅层设置在与衬底相对的晶体半导体层的一侧。 非晶硅层具有非晶掺杂，使得在掺杂的晶体半导体层和非晶层之间形成隧道结。 在700摄氏度以下制造这些结构使得结构的狭窄过渡区域成为可能。

公开(公告)号：GB2489830B

公开(公告)日：2014-08-20

申请号：GB201206801

申请日：2011-02-01

Applicant: IBM

Inventor： BEDELL STEPHEN ,  KIM JEE HWAN ,  INNS DANIEL ,  SADANA DEVENDRA ,  FOGEL KEITH ,  VICHICONTI JAMES

IPC: H01L21/18 ,  H01L21/02 ,  H01L21/30

Abstract: A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an alternate substrate; and propagating a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate. A system for layer transfer using a boron-doped silicon germanium (SiGe) layer includes a bulk silicon substrate; a boron-doped SiGe layer formed on the bulk silicon substrate, such that the boron-doped SiGe layer is located underneath an upper silicon (Si) layer, wherein the boron-doped SiGe layer is configured to propagate a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate after hydrogenation of the boron-doped SiGe layer; and an alternate substrate bonded to the upper Si layer.

公开(公告)号：GB2489830A

公开(公告)日：2012-10-10

申请号：GB201206801

申请日：2011-02-01

Applicant: IBM

Inventor： BEDELL STEPHEN ,  KIM JEE HWAN ,  INNS DANIEL ,  SADANA DEVENDRA ,  FOGEL KEITH ,  VICHICONTI JAMES

IPC: H01L21/18 ,  H01L21/02 ,  H01L21/30

Abstract: A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an alternate substrate; and propagating a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate. A system for layer transfer using a boron-doped silicon germanium (SiGe) layer includes a bulk silicon substrate; a boron-doped Si Ge layer formed on the bulk silicon substrate, such that the boron-doped SiGe layer is located underneath an upper silicon (Si) layer, wherein the boron- doped SiGe layer is configured to propagate a fracture at an interface between the boron- doped SiGe layer and the bulk silicon substrate after hydrogenation of the boron-doped SiGe layer; and an alternate substrate bonded to the upper Si layer.

公开(公告)号：DE112011100445T5

公开(公告)日：2013-04-04

申请号：DE112011100445

申请日：2011-02-01

Applicant: IBM

Inventor： BEDELL STEPHEN ,  SADANA DEVENDRA ,  FOGEL KEITH ,  VICHICONTI JAMES ,  KIM JEE HWAN ,  INNS DANIEL

IPC: H01L21/18

Abstract: Ein Verfahren für den Schichttransfer unter Verwendung einer mit Bor dotierten Silicium-Germanium(SiGe)-Schicht beinhaltet das Bilden einer mit Bor dotierten SiGe-Schicht auf einem Volumen-Silicium-Substrat; das Bilden einer oberen Silicium(Si)-Schicht über der mit Bor dotierten SiGe-Schicht; das Wasserstoffpassivieren der mit Bor dotierten SiGe-Schicht; das Verbinden der oberen Si-Schicht mit einem alternativen Substrat; und das Fortpflanzen einer Bruchstelle an einer Grenzfläche zwischen der mit Bor dotierten SiGe-Schicht und dem Volumen-Silicium-Substrat. Ein System für den Schichttransfer unter Verwendung einer mit Bor dotierten Silicium-Germanium(SiGe)-Schicht beinhaltet ein Volumen-Silicium-Substrat; eine auf dem Volumen-Silicium-Substrat gebildete, mit Bor dotierte SiGe-Schicht, so dass sich die mit Bor dotierte SiGe-Schicht unter einer oberen Silicium(Si)-Schicht befindet, wobei die mit Bor dotierte SiGe-Schicht so ausgebildet ist, dass sich nach Wasserstoffpassivieren der mit Bor dotierten SiGe-Schicht eine Bruchstelle an einer Grenzfläche zwischen der mit Bor dotierten SiGe-Schicht und dem Volumen-Silicium-Substrat fortpflanzt; und ein alternatives, mit der oberen Si-Schicht verbundenes Substrat.