公开(公告)号：EP0205874A2

公开(公告)日：1986-12-30

申请号：EP86106446

申请日：1986-05-13

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  KAUFMAN HAROLD RICHARD ,  ROSSNAGEL STEPHEN MARK

IPC: C23F4/00 ,  C23C14/35 ,  H01J37/34

CPC classification number: H01J37/3405

Abstract: A plasma sputter etching/deposition system comprising an electron-emitting hollow cathode arc- source 20 combined with a conventional plasma sputter etching/deposition system such as a magnetron 13, 17. The electrons emitted are coupled into the intrinsic high energy, e.g., magnetic filed 15 and are accelerated by the plasma potential and cause a significant increase plasma density. The resultant combination allows much greater sputtering/deposition efficiency than was possible with previous devices. According to a further aspect of the invention, switched operation is possible, whereby etching may vary from isotropic to anisotropic. A side discharge hollow cathode structure - (not shown) is also described for enhancing certain sputtering/deposition processes, wherein electrons may be emitted from one or more openings at the side of a hollow cathode chamber to achieve more uniform electron emission in a large process chamber.

公开(公告)号：DE3689428D1

公开(公告)日：1994-02-03

申请号：DE3689428

申请日：1986-04-08

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  KAUFMAN HAROLD RICHARD ,  ROSSNAGEL STEPHEN MARK

IPC: H01J37/077 ,  H01J1/02 ,  H01J3/02 ,  H01J37/073

Abstract: A high current density hollow cathode electron beam source for use in various E-beam apparatus is described. Bombardment of an electron emissive surface within the hollow cathode by energetic gas ions causes electrons to be emitted by secondary emission rather than thermionic emission effects. Once initialized by an external ionization voltage the device is essentially self sustaining and operates near room temperature, rather than at thermionic emission temperatures, and with reduced voltages. … The drawing shows the hollow cathode into which plasma gas is introduced via port 40 and the electron beam exits via aperture 36 to grid 58. Ionization of the gas is initiated by voltage source 54 and the electron beam is sustained by voltage 57.

公开(公告)号：DE3377602D1

公开(公告)日：1988-09-08

申请号：DE3377602

申请日：1983-01-26

Applicant: IBM ,  KAUFMAN HAROLD RICHARD

Inventor： HARPER JAMES MCKELL EDWIN ,  HEIBLUM MORDEHAI ,  KAUFMAN HAROLD RICHARD

IPC: B01J19/08 ,  H01J27/02 ,  H01J27/08 ,  H01J37/02 ,  H01J37/08 ,  H01J37/305 ,  H01J37/317 ,  H01L21/203 ,  H01L21/302 ,  H01L21/31

Abstract: A neutralised low energy ion beam is produced by forming a plasma between an anode (13) and a cathode (14) and maintaining a grid (16) at a potential slightly more positive than the cathode (14) so that a beam containing positive ions and high energy primary electrons from the plasma passes through the grid (16). … A neutralised high energy ion beam is produced by directing a low energy beam containing charged particles of opposite polarity to that of the ions in an unneutralised high energy ion beam across the latter beam. The low energy beam may be one produced by a generator as described above or another ion source and an electron source (21).

公开(公告)号：DE3573190D1

公开(公告)日：1989-10-26

申请号：DE3573190

申请日：1985-06-27

Applicant: IBM ,  KAUFMAN HAROLD RICHARD

Inventor： CUOMO JEROME JOHN ,  HARPER JAMES MCKELL EDWIN ,  KAUFMAN HAROLD RICHARD ,  SPEIDELL JAMES LOUIS

IPC: H01J37/08 ,  B23K15/00 ,  C23C14/46 ,  H01J37/09 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/265 ,  H01J37/302

Abstract: The present invention provides an ion beam system which produces an ion beam pattern without the need for a mask. A programmable grid (35) is used in combination with an ion beam source (14), where the apertures (54, 56, 68) of the programmable grid (35) can have electrical potentials associated therewith which either extract ions or impede the movement of ions through the apertures (54,56, 68). Depending upon the electrical biasing provided to each of the apertures (54, 56, 68) of the grid (35), different patterns of ions can be extracted through the grid (35). By changing the electrical bias at different locations on the programmable grid (35), these different patterns are produced. The patterns can be used for many applications including patterned deposition, patterned etching and patterned treatment of surfaces.

公开(公告)号：DE3064623D1

公开(公告)日：1983-09-29

申请号：DE3064623

申请日：1980-06-03

Applicant: IBM

Inventor： HARPER JAMES MCKELL EDWIN ,  KAUFMAN HAROLD RICHARD

IPC: H01L21/302 ,  H01J27/14 ,  H01J37/08 ,  H01J37/305 ,  H01L21/3065 ,  H01J27/00

公开(公告)号：DE3689428T2

公开(公告)日：1994-06-23

申请号：DE3689428

申请日：1986-04-08

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  KAUFMAN HAROLD RICHARD ,  ROSSNAGEL STEPHEN MARK

IPC: H01J37/077 ,  H01J1/02 ,  H01J3/02 ,  H01J37/073

Abstract: A high current density hollow cathode electron beam source for use in various E-beam apparatus is described. Bombardment of an electron emissive surface within the hollow cathode by energetic gas ions causes electrons to be emitted by secondary emission rather than thermionic emission effects. Once initialized by an external ionization voltage the device is essentially self sustaining and operates near room temperature, rather than at thermionic emission temperatures, and with reduced voltages. … The drawing shows the hollow cathode into which plasma gas is introduced via port 40 and the electron beam exits via aperture 36 to grid 58. Ionization of the gas is initiated by voltage source 54 and the electron beam is sustained by voltage 57.

公开(公告)号：DE3682954D1

公开(公告)日：1992-01-30

申请号：DE3682954

申请日：1986-05-13

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  KAUFMAN HAROLD RICHARD ,  ROSSNAGEL STEPHEN MARK

IPC: C23F4/00 ,  C23C14/35 ,  H01J37/34

Abstract: A plasma sputter etching/deposition system comprising an electron-emitting hollow cathode arc- source 20 combined with a conventional plasma sputter etching/deposition system such as a magnetron 13, 17. The electrons emitted are coupled into the intrinsic high energy, e.g., magnetic filed 15 and are accelerated by the plasma potential and cause a significant increase plasma density. The resultant combination allows much greater sputtering/deposition efficiency than was possible with previous devices. According to a further aspect of the invention, switched operation is possible, whereby etching may vary from isotropic to anisotropic. A side discharge hollow cathode structure - (not shown) is also described for enhancing certain sputtering/deposition processes, wherein electrons may be emitted from one or more openings at the side of a hollow cathode chamber to achieve more uniform electron emission in a large process chamber.

公开(公告)号：DE3373162D1

公开(公告)日：1987-09-24

申请号：DE3373162

申请日：1983-05-23

Applicant: IBM ,  KAUFMAN HAROLD RICHARD

Inventor： KAUFMAN HAROLD RICHARD ,  CUOMO JEROME JOHN

IPC: H01L21/265 ,  C23C14/46 ,  C23F4/00 ,  H01J27/02 ,  H01J27/08 ,  H01J37/08 ,  H01J37/305

公开(公告)号：DE3380580D1

公开(公告)日：1989-10-19

申请号：DE3380580

申请日：1983-05-23

Applicant: IBM ,  KAUFMAN HAROLD RICHARD

Inventor： KAUFMAN HAROLD RICHARD ,  CUOMO JEROME JOHN ,  HARPER JAMES KCKELL EDWIN

IPC: H01J37/22 ,  C23C14/46 ,  C23F1/00 ,  C23F4/00 ,  H01J27/02 ,  H01J27/08 ,  H01J27/14 ,  H01J37/08 ,  H01L21/265

Abstract: A compact ion source plug (43) connected to a socket (40) is provided. The source uses a magnetic pole piece which includes a center pole piece (50) and a surrounding circumferential pole piece (45) to form an arcuate fringe field. Cathode elements (47) and anode elements (48,49) are located within the fringe field for producing a plasma. A source body (52) terminates at one end with at least one grid (56, 57) and forms a plasma chamber with a base member (43). All of the electrical connections to the plasma generator and the gas connection are through a plug formed on the opposite side of the base member (43).

公开(公告)号：DE3376461D1

公开(公告)日：1988-06-01

申请号：DE3376461

申请日：1983-01-14

Applicant: IBM ,  KAUFMAN HAROLD RICHARD

Inventor： CUOMO JEROME JOHN ,  KAUFMAN HAROLD RICHARD

IPC: B01J19/08 ,  H01J27/02 ,  H01J27/20

Abstract: A method and apparatus for generating high current, negative ion beams is described. A plasma source of ions of one charge polarity includes an accelerator for accelerating the ions toward a target having a plurality of apertures. An electric field directs the ions exiting the apertures against a target surface which is arranged to emit ions of an opposite polarity. The electric field directs the opposite polarity ions away from the target forming a stream of oppositely charged ions. In the drawing the ions produced in the plasma chamber 10 are accelerated toward the apertured grid 12 by field 8 and pass through the aligned apertures in the grid 12 and target 16. A field established between apertured grid 18 and target 16 reverses the general direction of the ion beams so that they bombard the back surface of the target. Ions of the opposite polarity are emitted from the back of the target and are accelerated away from the target by the field between the grid 18 and the target. The opposite polarity ions exit as streams through the apertures in the grid 18.