公开(公告)号：JP2007109632A

公开(公告)日：2007-04-26

申请号：JP2006210142

申请日：2006-08-01

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK C ,  HOLMES STEVEN JOHN ,  HORAK DAVID V ,  KOBURGER CHARLES WILLIAM III ,  PASTEL LEAH MARIE PFEIFER

IPC: H01H1/26 ,  B81B3/00 ,  G01P15/135 ,  G01R19/04 ,  H01H1/02 ,  H01H35/14 ,  H01H36/00

CPC classification number: G01P15/0802 ,  B82Y15/00 ,  G01P15/06 ,  G01P15/0891 ,  G01P15/135 ,  H01H1/0094 ,  H01H35/14

Abstract: PROBLEM TO BE SOLVED: To provide an acceleration value and voltage measuring device, as well as, a manufacturing method of the acceleration value and voltage measuring device.
SOLUTION: This acceleration value and voltage measuring device has a conductive plate on the upper face of a first insulating layer, a second insulating layer which is the second insulating layer on the upper face of the conductive plate and in which the upper face of the plate is exposed to the opening of the second insulating layer, conductive nanotubes that are bridged over the opening, and conductive contacts to the nanotubes.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供加速度值和电压测量装置，以及加速度值和电压测量装置的制造方法。 解决方案：该加速度值和电压测量装置在第一绝缘层的上表面上具有导电板，第二绝缘层是导电板的上表面上的第二绝缘层，其中上表面 暴露于第二绝缘层的开口，桥接在开口上的导电纳米管和与纳米管的导电接触。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2012145582A

公开(公告)日：2012-08-02

申请号：JP2012016866

申请日：2012-01-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK C ,  HOLMES STEVEN JOHN ,  HORAK DAVID V ,  KOBURGER CHARLES WILLIAM III ,  PASTEL LEAH MARIE PFEIFER

IPC: G01P15/06 ,  G01P15/135 ,  G01R15/06 ,  G01R29/12 ,  H01H35/14

CPC classification number: G01P15/0802 ,  B82Y15/00 ,  G01P15/06 ,  G01P15/0891 ,  G01P15/135 ,  H01H1/0094 ,  H01H35/14

Abstract: PROBLEM TO BE SOLVED: To provide passive maximum acceleration and voltage measurement devices which are compact and do not need a power supply.SOLUTION: A device includes an electrically conductive plate 110 on a top surface of a first insulating layer 105; a second insulating layer 130 on a top surface of the conductive plate 110; and conductive nanotubes 180 suspended across an opening 135 in the second insulating layer 130. Because of acceleration perpendicular to the surface of the conductive plate 110, the nanotubes 180 are bent to be in contact with the conductive plate 110 and held by the van der Waals force.

Abstract translation: 要解决的问题：提供紧凑型无需电源的被动最大加速度和电压测量装置。 解决方案：器件包括在第一绝缘层105的顶表面上的导电板110; 在导电板110的顶表面上的第二绝缘层130; 以及悬挂在第二绝缘层130中的开口135上的导电纳米管180.由于垂直于导电板110的表面的加速度，纳米管180弯曲成与导电板110接触并且被范德华力 力。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2008010870A

公开(公告)日：2008-01-17

申请号：JP2007164722

申请日：2007-06-22

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： HORAK DAVID VACLAV ,  FURUKAWA TOSHIHARU ,  HOLMES STEVEN J ,  KOBURGER CHARLES WILLIAM III ,  MITCHELL PETER H ,  MARK CHARLES HAKEY

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03B27/42 ,  G03F7/70341 ,  G03F7/7085 ,  G03F7/70916

Abstract: PROBLEM TO BE SOLVED: To provide an illumination light in an immersion lithography stepper for particle or bubble detection. SOLUTION: Embodiments provide an immersion lithography exposure system comprising a wafer holder for holding a wafer, an immersion liquid for covering the wafer, an immersion head to dispense and contain the immersion liquid, and a light source adapted to lithographically expose a resist on the wafer. The system also comprises a light detector at a first location of the immersion head and a laser source at a second location within the immersion head. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供用于颗粒或气泡检测的浸没式光刻步进机中的照明光。 解决方案：实施例提供了一种浸没式光刻曝光系统，其包括用于保持晶片的晶片保持器，用于覆盖晶片的浸没液体，用于分配和容纳浸没液体的浸没头，以及适于光刻曝光抗蚀剂的光源 在晶圆上。 该系统还包括在浸没头的第一位置处的光检测器和在浸没头内的第二位置处的激光源。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：DE602005027329D1

公开(公告)日：2011-05-19

申请号：DE602005027329

申请日：2005-02-23

Applicant: IBM

Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK CHARLES ,  HORAK DAVID VACLAV ,  KOBURGER CHARLES WILLIAM III ,  MASTERS MARK ELIOT ,  MITCHELL PETER ,  POLONSKY STANISLAV

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/522

公开(公告)号：CA2559219C

公开(公告)日：2010-11-02

申请号：CA2559219

申请日：2005-03-22

Applicant: IBM

Inventor： FURUKAWA TOSHIHARU ,  KOBURGER CHARLES WILLIAM III ,  SLINKMAN JAMES ALBERT

IPC: H01L21/84 ,  H01L21/336 ,  H01L21/762 ,  H01L27/12 ,  H01L29/786

Abstract: A silicon-on-insulator (SOI) device and structure having locally strained regions in the silicon active layer formed by increasing the thickness of underlying regions of a buried insulating layer separating the silicon active layer from the substrate. The stress transferred from the underlying thickened regions of the insulating layer to the overlying strained regions increases carrier mobility in these confined regions of the active layer. Devices formed in and on the silicon active layer may benefit from the increased carrier mobility in the spaced-apart strained regions.

公开(公告)号：CA2559219A1

公开(公告)日：2005-10-13

申请号：CA2559219

申请日：2005-03-22

Applicant: IBM

Inventor： SLINKMAN JAMES ALBERT ,  KOBURGER CHARLES WILLIAM III ,  FURUKAWA TOSHIHARU

IPC: H01L21/84 ,  H01L21/336 ,  H01L21/762 ,  H01L27/12 ,  H01L29/786

Abstract: A silicon-on-insulator (SOI) device and structure having locally strained regions in the silicon active layer formed by increasing the thickness of underlying regions of a buried insulating layer separating the silicon active layer from the substrate. The stress transferred from the underlying thickened regions of the insulating layer to the overlying strained regions increases carrier mobility in these confined regions of the active layer. Devices formed in and on the silicon active layer may benefit from the increased carrier mobility in the spaced-apart strained regions.