公开(公告)号：DE69304503D1

公开(公告)日：1996-10-10

申请号：DE69304503

申请日：1993-12-13

Applicant: IBM

Inventor： BAILEY FREDERIC DENIS ,  BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALESSANDRO CESARE ,  CLEARFIELD HOWARD MARC ,  DOANY FUAD ELIAS ,  FLAGELLO DONIS GEORGE ,  HOVEL HAROLD JOHN ,  LATULIPE DOUGLAS CHARLES ,  LUSTIG NAFTALI ELIAHU ,  POMERENE ANDREW THOMAS STEWART ,  PURUSHOTHAMAN SAMPATH ,  SCHERPEREEL CHRISTOPHER MICHAE ,  SEEGER DAVID EARLE ,  SHAW JANE MARGARET

IPC: G03F1/08 ,  C01B31/06 ,  C08J7/06 ,  C23C8/26 ,  C23C8/50 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B29/04 ,  G02B1/10 ,  G11B5/255 ,  H01L21/31 ,  H01L21/314

Abstract: The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

公开(公告)号：DE3788471T2

公开(公告)日：1994-06-23

申请号：DE3788471

申请日：1987-07-10

Applicant: IBM

Inventor： KNOEDLER CHRISTINA MARIE ,  LATULIPE DOUGLAS CHARLES

IPC: H01L21/302 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/331 ,  H01L21/338 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L29/80 ,  H01L29/812 ,  H01L21/306 ,  H01L21/28

Abstract: A process for the fabrication of a vertically differentiated semiconductor structure is disclosed. In this process the semiconductor structure is covered with a vertical erosion control mask (13, Fig. 3). The control mask covering at least one horizontal surface (7) of the semiconductor structure is removed leaving the vertical surface covering (13) intact (Fig. 5). An isotropic etching of the uncovered horizontal surface (7) next occurs. Finally, the control mask covering (13) of the vertical surface (11) of the semiconductor structure is removed (Fig. 1). This process permits etching treatment of horizontal surface defects without adverse effect on the vertical surface (11) of the semiconductor structure.

公开(公告)号：DE3788471D1

公开(公告)日：1994-01-27

申请号：DE3788471

申请日：1987-07-10

Applicant: IBM

Inventor： KNOEDLER CHRISTINA MARIE ,  LATULIPE DOUGLAS CHARLES

IPC: H01L21/302 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/331 ,  H01L21/338 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L29/80 ,  H01L29/812 ,  H01L21/306 ,  H01L21/28

Abstract: A process for the fabrication of a vertically differentiated semiconductor structure is disclosed. In this process the semiconductor structure is covered with a vertical erosion control mask (13, Fig. 3). The control mask covering at least one horizontal surface (7) of the semiconductor structure is removed leaving the vertical surface covering (13) intact (Fig. 5). An isotropic etching of the uncovered horizontal surface (7) next occurs. Finally, the control mask covering (13) of the vertical surface (11) of the semiconductor structure is removed (Fig. 1). This process permits etching treatment of horizontal surface defects without adverse effect on the vertical surface (11) of the semiconductor structure.

公开(公告)号：DE69304503T2

公开(公告)日：1997-03-20

申请号：DE69304503

申请日：1993-12-13

Applicant: IBM

Inventor： BAILEY FREDERIC DENIS ,  BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALESSANDRO CESARE ,  CLEARFIELD HOWARD MARC ,  DOANY FUAD ELIAS ,  FLAGELLO DONIS GEORGE ,  HOVEL HAROLD JOHN ,  LATULIPE DOUGLAS CHARLES ,  LUSTIG NAFTALI ELIAHU ,  POMERENE ANDREW THOMAS STEWART ,  PURUSHOTHAMAN SAMPATH ,  SCHERPEREEL CHRISTOPHER MICHAE ,  SEEGER DAVID EARLE ,  SHAW JANE MARGARET

IPC: G03F1/08 ,  C01B31/06 ,  C08J7/06 ,  C23C8/26 ,  C23C8/50 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B29/04 ,  G02B1/10 ,  G11B5/255 ,  H01L21/31 ,  H01L21/314

Abstract: The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.