公开(公告)号：MY123962A

公开(公告)日：2006-06-30

申请号：MYPI9802015

申请日：1998-05-06

Applicant: IBM

Inventor： BABICH KATHERINE E ,  CALLEGARI ALESSANDRO CESARE ,  FONTAINE JULIEN ,  GRILL ALFRED ,  JAHNES CHRISTOPHER ,  PATEL VISHNUBHAI VITTHALBHAI

IPC: B32B9/00 ,  H01L21/3205 ,  C23C16/26 ,  C23C16/30 ,  G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312

Abstract: DISCLOSED IS VAPOR DEPOSITED BARC AND METHOD OF PREPARING TUNABLE AND REMOVABLE ANTIREFLECTIVE COATINGS BASED ON AMORPHOUS CARBON FILMS.THESE FILMS CAN BE HYDROGENATED, FLUORINATED, NITROGENATED CARBON FILMS. SUCH FILMS HAVE AN INDEX OF REFRACTION AND AN EXTINCTION COEFFICIENT TUNABLE FROM ABOUT 1.4 TO ABOUT 2.1 AND FROM ABOUT 0.1 TO ABOUT 0.6, RESPECTIVELY, AT UV AND DUV WAVELENGTHS, IN PARTICULAR 365, 248 AND 193 NM. MOREOVER, THE FILMS PRODUCED BY THE PRESENT INVENTION CAN BE DEPOSITED OVER DEVICE TOPOGRAPHY WITH HIGH CONFORMALITY, AND THEY ARE ETCHABLE BY OXYGEN AND/OR A FLUORIDE ION ETCH PROCESS. BECAUSE OF THEIR UNIQUE PROPERTIES, THESE FILMS CAN BE USED TO FORM A TUNABLE AND REMOVABLE ANTIREFLECTIVE COATING AT UV AND DUV WAVELENGTHS TO PRODUCE NEAR ZERO REFLECTANCE AT THE RESIST/BARC COATING INTERFACE. THIS BARC GREATLY IMPROVES PERFORMANCE OF SEMICONDUCTOR CHIPS.(FIG. 2B)

公开(公告)号：SG74649A1

公开(公告)日：2000-08-22

申请号：SG1998002939

申请日：1998-08-08

Applicant: IBM

Inventor： BABICH KATHERINA E ,  BRUNNER TIMOTHY ALLAN ,  CALLEGARI ALESSANDRO CESARE ,  GRILL ALFRED ,  JAHNES CHRISTOPHER V ,  PATEL VISHNUBHAI VITTHALBHAI

IPC: C01B31/00 ,  C23C14/06 ,  G03F7/11 ,  H01L21/027 ,  H01L21/3205

公开(公告)号：DE69304503D1

公开(公告)日：1996-10-10

申请号：DE69304503

申请日：1993-12-13

Applicant: IBM

Inventor： BAILEY FREDERIC DENIS ,  BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALESSANDRO CESARE ,  CLEARFIELD HOWARD MARC ,  DOANY FUAD ELIAS ,  FLAGELLO DONIS GEORGE ,  HOVEL HAROLD JOHN ,  LATULIPE DOUGLAS CHARLES ,  LUSTIG NAFTALI ELIAHU ,  POMERENE ANDREW THOMAS STEWART ,  PURUSHOTHAMAN SAMPATH ,  SCHERPEREEL CHRISTOPHER MICHAE ,  SEEGER DAVID EARLE ,  SHAW JANE MARGARET

IPC: G03F1/08 ,  C01B31/06 ,  C08J7/06 ,  C23C8/26 ,  C23C8/50 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B29/04 ,  G02B1/10 ,  G11B5/255 ,  H01L21/31 ,  H01L21/314

Abstract: The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

公开(公告)号：MY132894A

公开(公告)日：2007-10-31

申请号：MYPI9803399

申请日：1998-07-24

Applicant: IBM

Inventor： BABICH KATHERINA E ,  BRUNNER TIMOTHY ALLAN ,  CALLEGARI ALESSANDRO CESARE ,  GRILL ALFRED ,  JAHNES CHRISTOPHER V ,  PATEL VISHNUBHAI VITTHALBHAI

IPC: C01B31/00 ,  H01L21/3205 ,  C23C14/06 ,  G03F7/11 ,  H01L21/027

Abstract: DISCLOSED IS VAPOR DEPOSITED THICK ARC LAYER AND METHOD OF PREPARING SINGLE AND TUNABLE THICK BOTTOM LAYER COATINGS BASED ON AMORPHOUS CARBON FILMS. THESE FILM CAN BE HYDROGENATED, FLUORINATED, NITROGENATED CARBON FILMS. SUCH FILMS HAVE THE INDEX OF REFRACTION AND THE EXTINCTION COEFFICIENT TUNABLE FROM ABOUT 1.4 TO ABOUT 2.1 AND FROM ABOUT 0.1 TO 0.6, RESPECTIVELY, AT UV AND DUV WAVELENGHTS, IN PARTICULAR 365, 248 AND 193 NM. THIS MAKES THE FILMS EXTREMELY USEFUL TO BE USED AS THICK BOTTOM LAYERS IN A BILAYER RESIST SYSTEM. MOREOVER, THE FILMS PRODUCED BY THE PRESENT INVENTION CAN BE DEPOSITED OVER DEVICE TOPOGRAPHY WITH HIGH CONFORMALITY, AND THEY ARE ETCHABLE BY OXYGEN AND/OR FLUORINE ION ETCH PROCESS. BECAUSE OF THESE UNIQUE PROPERTIES, THESE FILMS CAN BE USED TO FORM A SINGLE OR TUNABLE THICK BOTTOM LAYER AT UV AND DUV WAVELENGHTS TO PRODUCE PRACTICALLY ZERO REFLECTIONS AT THE RESIST/BOTTOM LAYER INTERFACE. THIS GREATLY IMPROVES PERFORMANCES OF SEMICONDUCTORS CHIPS.

公开(公告)号：DE69304503T2

公开(公告)日：1997-03-20

申请号：DE69304503

申请日：1993-12-13

Applicant: IBM

Inventor： BAILEY FREDERIC DENIS ,  BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALESSANDRO CESARE ,  CLEARFIELD HOWARD MARC ,  DOANY FUAD ELIAS ,  FLAGELLO DONIS GEORGE ,  HOVEL HAROLD JOHN ,  LATULIPE DOUGLAS CHARLES ,  LUSTIG NAFTALI ELIAHU ,  POMERENE ANDREW THOMAS STEWART ,  PURUSHOTHAMAN SAMPATH ,  SCHERPEREEL CHRISTOPHER MICHAE ,  SEEGER DAVID EARLE ,  SHAW JANE MARGARET

IPC: G03F1/08 ,  C01B31/06 ,  C08J7/06 ,  C23C8/26 ,  C23C8/50 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B29/04 ,  G02B1/10 ,  G11B5/255 ,  H01L21/31 ,  H01L21/314

Abstract: The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.