公开(公告)号：EP2742385A4

公开(公告)日：2014-06-18

申请号：EP12822200

申请日：2012-08-10

Applicant: IBM

Inventor： CHEN KUANG-JUNG ,  HOLMES STEVEN J ,  HUANG WU-SONG ,  LIU SEN

IPC: G03F7/004 ,  C09D133/04 ,  C09J133/14 ,  G03F7/038 ,  G03F7/039 ,  G03F7/09 ,  G03F7/095

CPC classification number: G03F7/0382 ,  C09J133/14 ,  G03F7/091 ,  G03F7/094 ,  G03F7/095

公开(公告)号：WO2011031396A3

公开(公告)日：2011-06-30

申请号：PCT/US2010044630

申请日：2010-08-06

Applicant: IBM ,  GOLDFARB DARIO L ,  GLODDE MARTIN ,  HUANG WU-SONG S ,  LIU SEN ,  VYKLICKY LIBOR ,  LI WAI-KIN

Inventor： GOLDFARB DARIO L ,  GLODDE MARTIN ,  HUANG WU-SONG S ,  LIU SEN ,  VYKLICKY LIBOR ,  LI WAI-KIN

IPC: C09D5/32 ,  G03F7/20 ,  H01L21/02

CPC classification number: G03F7/0388 ,  G03F7/038 ,  G03F7/091 ,  G03F7/11 ,  H01L51/447

Abstract: A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract translation: 一种可固化液体制剂，其包含：（i）一种或多种近红外吸收聚甲炔染料; （ii）一种或多种可交联聚合物; 和（iii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：WO2012067755A2

公开(公告)日：2012-05-24

申请号：PCT/US2011057245

申请日：2011-10-21

Applicant: IBM ,  CHEN KUANG-JUNG ,  LIU SEN ,  HUANG WU-SONG ,  LI WAI-KIN

Inventor： CHEN KUANG-JUNG ,  LIU SEN ,  HUANG WU-SONG ,  LI WAI-KIN

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/26 ,  G03F7/32

CPC classification number: G03F7/325 ,  G03F7/0397

Abstract: The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer and a radiation sensitive acid generator. The imaging polymer includes a first monomelic unit having a pendant acid labile moiety and a second monomelic unit containing a reactive ether moiety, an isocyanide moiety or an isocyanate moiety. The patterning forming method utilizes an organic solvent developer to selectively remove unexposed regions of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193nm (ArF) lithography.

Abstract translation: 本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。 光致抗蚀剂组合物包括成像聚合物和辐射敏感酸产生剂。 成像聚合物包括具有侧酸不稳定部分的第一单体单元和包含反应性醚部分，异氰化物部分或异氰酸酯部分的第二单体单元。 图案形成方法利用有机溶剂显影剂选择性去除光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。 光致抗蚀剂组合物和图案形成方法对于使用193nm（ArF）光刻在半导体衬底上形成材料图案特别有用。

公开(公告)号：WO2011022221A3

公开(公告)日：2011-06-30

申请号：PCT/US2010044631

申请日：2010-08-06

Applicant: IBM ,  HUANG WU-SONG ,  LIU SEN ,  LI WAI-KIN ,  GOLDFARB DARIO L ,  VYKLICKY LIBOR ,  GLODDE MARTIN ,  VARANASI PUSHKARA R

Inventor： HUANG WU-SONG ,  LIU SEN ,  LI WAI-KIN ,  GOLDFARB DARIO L ,  VYKLICKY LIBOR ,  GLODDE MARTIN ,  VARANASI PUSHKARA R

IPC: C09B67/10 ,  C08J5/18 ,  C08K5/17 ,  C08L63/00 ,  H01L21/02

CPC classification number: G03F7/091 ,  G03F9/7026

Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine -based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near- infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract translation: 包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及含有固体近红外吸收膜的涂层的微电子基板以及在近红外线吸收膜位于微电子基板之间的情况下图案化涂布在微电子基板上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：WO2013023124A3

公开(公告)日：2013-07-11

申请号：PCT/US2012050267

申请日：2012-08-10

Applicant: IBM ,  CHEN KUANG-JUNG ,  HOLMES STEVEN J ,  HUANG WU-SONG ,  LIU SEN

Inventor： CHEN KUANG-JUNG ,  HOLMES STEVEN J ,  HUANG WU-SONG ,  LIU SEN

IPC: G03F7/004 ,  C09D133/04 ,  G03F7/039 ,  G03F7/09

CPC classification number: G03F7/0382 ,  C09J133/14 ,  G03F7/091 ,  G03F7/094 ,  G03F7/095

Abstract: A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist (30E) and the NDBARC layer (20E) become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.

Abstract translation: 负显影底部抗反射涂层（NDBARC）材料包括含有脂族醇部分，芳族部分和羧酸部分的聚合物。 NDBARC组合物在涂布和烘烤后不溶于典型的抗蚀剂溶剂如丙二醇甲基醚乙酸酯（PGMEA）。 NDBARC材料还包括光致酸发生剂和任选的交联化合物。 在NDBARC材料中，羧酸提供了显影剂的溶解度，而单独的醇，单独的羧酸或它们的组合提供了PGMEA的抗性。 NDBARC材料对抗蚀剂溶剂具有抗性，因此在NDBARC的抗蚀涂层期间，NDBARC和抗蚀剂之间不会发生混合。 在曝光和烘烤之后，由于在光刻曝光部分中的负光刻胶和NDBARC层中的聚合物的化学扩展交联，负光致抗蚀剂（30E）和NDBARC层（20E）的光刻曝光部分变得不溶于显影剂。

公开(公告)号：WO2009087027A3

公开(公告)日：2009-11-05

申请号：PCT/EP2008067717

申请日：2008-12-17

Applicant: IBM ,  GLODDE MARTIN ,  LIU SEN ,  POPOVA IRENE

Inventor： GLODDE MARTIN ,  LIU SEN ,  POPOVA IRENE

IPC: G03F7/004 ,  G03F7/039

CPC classification number: G03F7/0045 ,  G03F7/0392

Abstract: A photoacid generator compound P+ A-, comprises an antenna group P+ comprising a cation that generates protons upon interaction with light, and A- comprising a weakly coordinating peracceptor-substituted aromatic anion that does not contain fluorine or semi-metallic elements such as boron. In one embodiment, such anions comprise the following compounds 4, 5, 6 and 7, wherein E comprises an electron- withdrawing group and the removal of one proton generates aromaticity. P+ comprises an onium cation that decomposes into a proton and other components upon interaction with photons. P+ may comprise an organic chalcogen onium cation or a halonium cation, wherein the chalcogen onium cation in another embodiment may comprises an oxonium, sulfonium, selenium, tellurium, or onium cation, and the halonium cation may comprise an iodonium, chlorine or bromine onium cation. A novel compound comprises TPS CN5. A photolithographic formulation comprises the photoacid generator in combination with a photolithographic composition such as a photolithographic polymer. The formulation, when on a substrate, is exposed to optical lithographic radiation or ArF (193 nm) or KrF (248 nm) radiation, and developed. A product comprises an article of manufacture made by the method of the invention.

Abstract translation: 光酸产生剂化合物P + A-包含天线基团P +，所述天线基团P +包含在与光相互作用时产生质子的阳离子，和包含不包含氟或半金属元素如硼的弱配位的被取代基取代的芳族阴离子的A-。 在一个实施方案中，这样的阴离子包含以下化合物4,5,6和7，其中E包含吸电子基团并且去除一个质子产生芳香性。 P +包含鎓阳离子，其在与光子相互作用时分解成质子和其他组分。 P +可以包含有机硫属元素鎓阳离子或卤化鎓阳离子，其中在另一个实施方案中硫属元素鎓阳离子可以包含氧鎓，锍，硒，碲或鎓阳离子，并且所述卤鎓阳离子可以包含碘鎓，氯或溴鎓阳离子 。 一种新型化合物包含TPS CN5。 光刻制剂包含与光刻组合物例如光刻聚合物组合的光酸产生剂。 当在基材上时，该配方暴露于光学光刻辐射或ArF（193nm）或KrF（248nm）辐射下并显影。 产品包括通过本发明的方法制造的制品。

公开(公告)号：WO2009091704A2

公开(公告)日：2009-07-23

申请号：PCT/US2009030792

申请日：2009-01-13

Applicant: IBM ,  LI WENJIE ,  HUANG WU-SONG S ,  VARANASI PUSHKARA R ,  LIU SEN ,  POPOVA IRENE Y

Inventor： LI WENJIE ,  HUANG WU-SONG S ,  VARANASI PUSHKARA R ,  LIU SEN ,  POPOVA IRENE Y

IPC: G03F7/004 ,  C07C317/14 ,  G03F7/26

CPC classification number: C07C309/59 ,  C07C25/18 ,  C07C309/40 ,  C07C381/12 ,  G03F7/0045 ,  G03F7/0397

Abstract: Fluorine-free photoacid generators and photoresist compositions containing fluorine-free photoacid generators are enabled as alternatives to PFOS/PFAS photoacid generator-containing photoresists. The photoacid generators are characterized by the presence of a fluorine-free aromatic sulfonate anionic component having one or more electron withdrawing groups. The photoacid generators preferably contain a fluorine-free onium cationic component, more preferably a sulfonium cationic component. The photoresist compositions preferably contain an acid sensitive imaging polymer having a lactone functionality. The compositions are especially useful for forming material patterns using 193nm (ArF) imaging radiation.

Abstract translation: 含有无氟光致酸发生剂的无氟光致酸发生剂和光致抗蚀剂组合物可用作具有PFOS / PFAS光致酸产生剂的光致抗蚀剂的替代品。 光酸产生剂的特征在于存在具有一个或多个吸电子基团的无氟芳族磺酸盐阴离子组分。 光酸产生剂优选含有无氟鎓阳离子成分，更优选含有阳离子锍组分。 光致抗蚀剂组合物优选含有具有内酯官能度的酸敏感成像聚合物。 组合物特别适用于使用193nm（ArF）成像辐射形成材料图案。

公开(公告)号：GB2498674B

公开(公告)日：2014-11-05

申请号：GB201307732

申请日：2011-10-21

Applicant: IBM

Inventor： CHEN KUANG-JUNG ,  LIU SEN ,  HUANG WU-SONG ,  LI WAI-KIN

IPC: G03F7/32 ,  G03F7/004 ,  G03F7/039

公开(公告)号：GB2486102A

公开(公告)日：2012-06-06

申请号：GB201203634

申请日：2010-08-06

Applicant: IBM

Inventor： GOLDFARB DARIO L ,  GLODDE MARTIN ,  HUANG WU-SONG ,  LIU SEN ,  VYKLICKY LIBOR ,  LI WAI-KIN

IPC: C09D5/32 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  H01L21/02

Abstract: A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

公开(公告)号：SG11201404867YA

公开(公告)日：2014-09-26

申请号：SG11201404867Y

申请日：2013-06-27

Applicant: IBM

Inventor： CHEN KUANG-JUNG ,  HOLMES STEVEN ,  HUANG WU-SONG ,  KWONG RANEE WAI-LING ,  LIU SEN

IPC: G02B1/11 ,  B32B7/02 ,  G03F7/004

Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.