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    RADIATION SENSITIVE POSITIVE TYPE RESIST
    5.
    发明专利
    RADIATION SENSITIVE POSITIVE TYPE RESIST 失效

    公开(公告)号：JPH11316460A

    公开(公告)日：1999-11-16

    申请号：JP3870299

    申请日：1999-02-17

    Applicant: IBM

    Inventor： CHEN KUANG-JUNG ,  DELLAGUARDIA RONALD A ,  HUANG WU-SONG ,  KATNANI AHMAD D ,  KHOJASTEH MAHMOUD M ,  LIN QINGHUANG

    IPC: H01L21/027 ,  G03F7/004 ,  G03F7/039

    Abstract: PROBLEM TO BE SOLVED: To obtain high resolution and superior stability by incorporating a mix of at least two kinds of miscible polymer resins soluble in an aqueous base to make it useful for the blend of a positive type resist. SOLUTION: One of polymer resins soluble in an aq. base is partially protected with protective groups, having high activation energy and the other of the polymer resins soluble in an aqueous base is partially protected with protective groups having low activation energy. The polymer resin to be used is a homopolymer which is soluble in an alkali solution after being deprotected or a multiple polymer containing two or more kinds of repeating monomeric units e.g. a copolymer or a terpolymer and contains polar functional groups which ionize readily. The polar functional groups of the polymer resins are hydroxyl or carboxyl groups. The homopolymer which can be used as the polymer resin is especially preferably polyhydroxystyrene(PHS), and the para-type is most preferable.

    PHOTORESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND PATTERN FORMING METHOD USING THEREOF
    6.
    发明申请
    PHOTORESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND PATTERN FORMING METHOD USING THEREOF 审中-公开
    用于负面发展的光电组合物及其使用的图案形成方法

    公开(公告)号：WO2012067755A2

    公开(公告)日：2012-05-24

    申请号：PCT/US2011057245

    申请日：2011-10-21

    Applicant: IBM ,  CHEN KUANG-JUNG ,  LIU SEN ,  HUANG WU-SONG ,  LI WAI-KIN

    Inventor： CHEN KUANG-JUNG ,  LIU SEN ,  HUANG WU-SONG ,  LI WAI-KIN

    IPC: G03F7/004 ,  G03F7/038 ,  G03F7/26 ,  G03F7/32

    CPC classification number: G03F7/325 ,  G03F7/0397

    Abstract: The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer and a radiation sensitive acid generator. The imaging polymer includes a first monomelic unit having a pendant acid labile moiety and a second monomelic unit containing a reactive ether moiety, an isocyanide moiety or an isocyanate moiety. The patterning forming method utilizes an organic solvent developer to selectively remove unexposed regions of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193nm (ArF) lithography.

    Abstract translation: 本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。 光致抗蚀剂组合物包括成像聚合物和辐射敏感酸产生剂。 成像聚合物包括具有侧酸不稳定部分的第一单体单元和包含反应性醚部分，异氰化物部分或异氰酸酯部分的第二单体单元。 图案形成方法利用有机溶剂显影剂选择性去除光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。 光致抗蚀剂组合物和图案形成方法对于使用193nm（ArF）光刻在半导体衬底上形成材料图案特别有用。

    WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF
    7.
    发明申请
    WET DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND METHOD FOR USE THEREOF 审中-公开
    可湿性底漆抗反射涂料组合物及其使用方法

    公开(公告)号：WO2007121456A3

    公开(公告)日：2008-03-27

    申请号：PCT/US2007066841

    申请日：2007-04-18

    Applicant: IBM ,  CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

    Inventor： CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

    IPC: G03C1/00

    CPC classification number: G03F7/091 ,  C08F220/28 ,  C08F222/40 ,  C08F232/08 ,  Y10S430/151

    Abstract: The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.

    Abstract translation: 本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。 抗反射涂料组合物可在含水碱性显影剂中显影。 抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。 聚合物不包含酸不稳定基团。 本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。

    Method to mitigate resist pattern critical dimension variation in double-exposure process
    8.
    发明专利
    Method to mitigate resist pattern critical dimension variation in double-exposure process 有权
    在双重曝光过程中缓解电阻图形关键尺寸变化的方法

    公开(公告)号：JP2010244041A

    公开(公告)日：2010-10-28

    申请号：JP2010073184

    申请日：2010-03-26

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： WAI-KIN LI ,  HUANG WU-SONG ,  CHEN KUANG-JUNG

    IPC: G03F7/40 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027

    CPC classification number: G03F7/40 ,  G03F7/0035 ,  G03F7/2024 ,  G03F7/203 ,  G03F7/2041 ,  G03F7/38

    Abstract: PROBLEM TO BE SOLVED: To provide a method to mitigate resist pattern critical dimension variation in a double-exposure process.
    SOLUTION: The method to mitigate resist pattern critical dimension (CD) variation in a double-exposure process generally includes steps of: forming a photoresist layer over a substrate; exposing the photoresist layer to a first radiation; developing the photoresist layer to form a first pattern in the photoresist layer; forming a topcoat layer over the photoresist layer; exposing the topcoat layer and the photoresist layer to a second radiation; removing the topcoat layer; and developing the photoresist layer to form a second pattern in the photoresist layer.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种减轻双曝光过程中抗蚀剂图案临界尺寸变化的方法。 解决方案：减轻双曝光工艺中的抗蚀剂图案临界尺寸（CD）变化的方法通常包括以下步骤：在衬底上形成光致抗蚀剂层; 将光致抗蚀剂层暴露于第一辐射; 显影光致抗蚀剂层以在光致抗蚀剂层中形成第一图案; 在光致抗蚀剂层上形成顶涂层; 将顶涂层和光致抗蚀剂层暴露于第二辐射; 去除顶涂层; 并且在光致抗蚀剂层中显影光致抗蚀剂层以形成第二图案。 版权所有（C）2011，JPO＆INPIT

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