公开(公告)号：EP2013659A4

公开(公告)日：2011-12-07

申请号：EP07760816

申请日：2007-04-18

Applicant: IBM

Inventor： CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

IPC: G03F7/09 ,  C08F220/28

CPC classification number: G03F7/091 ,  C08F220/28 ,  C08F222/40 ,  C08F232/08 ,  Y10S430/151

公开(公告)号：EP0698230A4

公开(公告)日：1995-10-24

申请号：EP94900495

申请日：1993-10-29

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM ROSS ,  BREYTA GREGORY ,  DIPIETRO RICHARD ANTHONY ,  ITO HIROSHI ,  KNORS CHRISTOPHER JOHN ,  KWONG RANEE WAI-LING ,  MIURA STEVE SEIICHI ,  MONTGOMERY MELVIN WARREN ,  MOREAU WAYNE MARTIN ,  SACHDEV HARBANS SINGH ,  WELSH KEVIN MICHAEL

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C5/16 ,  G03F7/029

CPC classification number: G03F7/039

Abstract: Resists for use in ultraviolet, electron beam and x-ray exposure devices comprising a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate esters or benzenesulfonyloxy esters of N-hydroxyimides.

公开(公告)号：JPH10182989A

公开(公告)日：1998-07-07

申请号：JP25249297

申请日：1997-09-17

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM ROSS ,  FAHEY JAMES THOMAS ,  HEFFERON GEORGE JOSEPH ,  HUANG WU-SONG ,  JAGANNATHAN PREMLATHA ,  KATNANI AHMAD DAUOD ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  KIM YAN LEE ,  SACHDEV HARBANS SINGH ,  SACHDEV KRISHNA GANDI ,  SOORIYAKUMARAN RATNAM ,  WOOD ROBERT LAVIN

IPC: C08L25/02 ,  C08L61/10 ,  C08L101/00 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To make a composition hardly receive a disadvantageous reaction with environmental contaminants, enhance the tolerance for variable or long delay between exposure and printing after the exposure or printing after the exposure and development, eliminate any deterioration in a profile, stabilize the solubility in solvents and impart storage life thereof in a solution for a long period at ambient temperature. SOLUTION: This microlithographic composition comprises a composition, containing a film-forming polymer substituted at the o-position with an acid unstable compound containing a ketal component in at least a part of a chemically bound recurring hydroxyl group and an acid-generating compound, capable of forming an acid by exposure to actinic radiations and chemically bound to the polymer and used as the microlithographic composition. The acid generated by the exposure initiates the cleavage of at least a part of the compound containing the ketal component and the exposed composition becomes selectively more soluble in an aqueous base as compared with an unexposed composition.

公开(公告)号：WO2007121456A3

公开(公告)日：2008-03-27

申请号：PCT/US2007066841

申请日：2007-04-18

Applicant: IBM ,  CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

Inventor： CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

IPC: G03C1/00

CPC classification number: G03F7/091 ,  C08F220/28 ,  C08F222/40 ,  C08F232/08 ,  Y10S430/151

Abstract: The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.

Abstract translation: 本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。 抗反射涂料组合物可在含水碱性显影剂中显影。 抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。 聚合物不包含酸不稳定基团。 本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。

公开(公告)号：DE112013003188T5

公开(公告)日：2015-03-12

申请号：DE112013003188

申请日：2013-06-27

Applicant: IBM

Inventor： LIU SEN ,  CHEN KUANG-JUNG ,  HOLMES STEVEN ,  HUANG WU-SONG ,  KWONG RANEE WAI-LING

IPC: G02B1/11 ,  B32B7/02 ,  G03F7/004

Abstract: Die vorliegende Erfindung betrifft eine Zusammensetzung einer entwickelbaren untenliegenden Antireflexbeschichtung (BARC-Zusammensetzung) und ein Verfahren zum Bilden von Strukturen unter Verwendung der BARC-Zusammensetzung. Die BARC-Zusammensetzung enthält ein erstes Polymer mit einer ersten Carbonsäureeinheit, einer Hydroxy-enthaltenden alicyclischen Einheit und einer ersten chromophoren Einheit; ein zweites Polymer mit einer zweiten Carbonsäureeinheit, einer Hydroxy-enthaltenden acyclischen Einheit und einer zweiten chromophoren Einheit; ein Vernetzungsmittel; und einen strahlungsempfindlichen Säuregenerator. Die erste und die zweite chromophore Einheit absorbieren jeweils Licht mit einer Wellenlänge von 100 nm bis 400 nm. Bei dem Verfahren zum Bilden von Strukturen wird eine Photoresistschicht über einer BARC-Schicht aus der BARC-Zusammensetzung gebildet. Nach dem Exponieren werden nichtexponierte Bereiche der Photoresistschicht und der BARC-Schicht selektiv durch einen Entwickler entfernt, um eine strukturierte Struktur in der Photoresistschicht zu bilden. Die BARC-Zusammensetzung und das Verfahren zum Bilden von Strukturen sind besonders für Implantationsebenen verwendbar.

公开(公告)号：GB2517324A

公开(公告)日：2015-02-18

申请号：GB201419648

申请日：2013-06-27

Applicant: IBM

Inventor： CHEN KUANG-JUNG ,  HOLMES STEVEN ,  HUANG WU-SONG ,  KWONG RANEE WAI-LING ,  LIU SEN

IPC: G02B1/11 ,  B32B7/02 ,  C09D133/00 ,  G03F7/004

Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy- containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.

公开(公告)号：DE69027799D1

公开(公告)日：1996-08-22

申请号：DE69027799

申请日：1990-02-02

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM ROSS ,  KNORS CHRISTOPHER JOHN ,  KWONG RANEE WAI-LING ,  MIURA STEVE SEIICHI ,  MONTGOMERY MELVIN WARREN ,  MOREAU WAYNE MARTIN ,  SACHDEV HARBANS SINGH

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30

Abstract: Resists for use in photon, electron beam and x-ray exposure devices comprise a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate salts of imides.

公开(公告)号：GB2517324B

公开(公告)日：2015-06-03

申请号：GB201419648

申请日：2013-06-27

Applicant: IBM

Inventor： CHEN KUANG-JUNG ,  HOLMES STEVEN ,  HUANG WU-SONG ,  KWONG RANEE WAI-LING ,  LIU SEN

IPC: G02B1/11 ,  B32B7/02 ,  C09D133/00 ,  G03F7/004

Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.

公开(公告)号：DE68926143T2

公开(公告)日：1996-10-24

申请号：DE68926143

申请日：1989-09-16

Applicant: IBM

Inventor： BRUCE JAMES ALLEN ,  KERBAUGH MICHAEL LYNN ,  KWONG RANEE WAI-LING ,  LEE TANYA NINA ,  LINDE HAROLD GEORGE ,  SACHDEV HARBANS SINGH ,  SACHDEV KRISHNA GANDHI

IPC: H01L21/302 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L21/3065

Abstract: The structure comprises a pattern of a cured polymeric material deposited onto a substrate, said polymeric material having at least one fluorine-containing functional group and of an overlying silylated photoresist material. For forming a structure on a substrate utilizing photolithographic techniques a layer of polymeric material containing a fluorine-containing compound is applied over the substrate and cured. A layer of photoresist material is applied over the polymeric material, imagewise exposed and developed to reveal the image on the underlying polymeric material. Thereafter, the photoresist is silylated, and the then present structure is reactive ion etched to transfer the pattern down to the underlying substrate. The fluorine component provides that the structure or the pattern and the underlying substrate respectively are free of residue and cracking.

公开(公告)号：SG11201404867YA

公开(公告)日：2014-09-26

申请号：SG11201404867Y

申请日：2013-06-27

Applicant: IBM

Inventor： CHEN KUANG-JUNG ,  HOLMES STEVEN ,  HUANG WU-SONG ,  KWONG RANEE WAI-LING ,  LIU SEN

IPC: G02B1/11 ,  B32B7/02 ,  G03F7/004

Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.