中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.017 seconds)

    2.
    发明专利
    未知

    公开(公告)号：DE2257047A1

    公开(公告)日：1973-06-07

    申请号：DE2257047

    申请日：1972-11-21

    Applicant: IBM

    Inventor： BASI JAGTAR SINGH ,  LYONS VINCENT JAMES

    IPC: H01L21/22 ,  C30B31/06 ,  C30B31/16 ,  B01J17/34

    Abstract: 1412438 Semiconductor diffusion INTERNATIONAL BUSINESS MACHINES CORP 22 Nov 1972 [2 Dec 1971] 54044/72 Heading H1K Zinc is diffused into a GaAs substrate in an evacuated container at a temperature between 800‹ and 1000‹ C. (e.g. 900‹ C.) in the presence of a two-phase system of Si and As to attain controllable shallow diffused regions. The Si-As system contains SiAs in the solid solution, and may comprise 2 to 50 (preferably 2À8) atomic per cent. As; it may be prepared as described in Specification 1,292,374. The dopant source may be Zn; ZnAs 2 ; Ga-Zn alloy; mixtures of Zn and As; ZnAs 2 and As; GaAs, ZnAs, and ZnAs 2 ; or preferably a homogenized mixture of Zu and GaAs. The substrate may be doped with Sn to a concentration of 1-3 x 10 18 atoms/cc.

    3.
    发明专利
    未知

    公开(公告)号：DE1240826B

    公开(公告)日：1967-05-24

    申请号：DEJ0025051

    申请日：1963-12-30

    Applicant: IBM

    Inventor： HULL EDWARD MELVIN ,  LYONS VINCENT JAMES

    IPC: H01L21/205

    Abstract: 1,002,528. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 2, 1963 [Dec. 31, 1962], No. 47382/63. Heading H1K. A method of producing a smooth-surfaced epitazial deposit of semi-conductive material on a substrate comprises reacting a halogen transport element with a source of both semi-conductive material and cadmium and decomposing the vapour so formed on to a heated substrate, the deposit having a cadmium concentration of the order of the limit of solubility for cadmium in the semi-conductive deposit. As shown, an N-type gallium arsenide (GaAs) wafer 6 is placed in a sealed quartz reaction tube 1 together with a source 3 of GaAs, a source 4 of iodine or other halogen, and a source 5 of cadmium. The materials of sources 3, 4 and 5 are heated by coil 2a, whilst wafer 6, which may be masked, is heated by coil 2b. The iodine reacts with the sources of GaAs and cadmium and forms a vapour 8 which decomposes on the wafer 6 to produce an epitaxial deposit 7 of P-type GaAs. A Group II element such as zinc may be included in the GaAs source 3 or the cadmium source 5 to produce greater impurity concentrations in the deposited layer. An " open tube system of vapour deposition may also be used. The substrate may also be of P-type material.

Patent Agency Ranking