公开(公告)号：EP1849183A4

公开(公告)日：2010-09-01

申请号：EP06735050

申请日：2006-02-14

Applicant: IBM ,  SONY CORP

Inventor： NGUYEN SON V ,  LANE SARAH L ,  LEE JIA ,  IDA KENSAKU ,  RESTAINO DARRYL D ,  NOGAMI TAKESHI

IPC: H01L21/31

CPC classification number: H01L21/7682 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/3122 ,  H01L21/31633 ,  H01L2221/1047

公开(公告)号：EP2567400A4

公开(公告)日：2017-12-27

申请号：EP11777742

申请日：2011-03-21

Applicant: IBM

Inventor： HORAK DAVID V ,  NOGAMI TAKESHI ,  PONOTH SHOM ,  YANG CHIH-CHAO

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76805 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Interconnect structures having self-aligned dielectric caps are provided. At least one metallization level is formed on a substrate. A dielectric cap is selectively deposited on the metallization level.

公开(公告)号：WO2006088881A3

公开(公告)日：2007-01-18

申请号：PCT/US2006005204

申请日：2006-02-14

Applicant: IBM ,  SONY CORP ,  NGUYEN SON V ,  LANE SARAH L ,  LEE JIA ,  IDA KENSAKU ,  RESTAINO DARRYL D ,  NOGAMI TAKESHI

Inventor： NGUYEN SON V ,  LANE SARAH L ,  LEE JIA ,  IDA KENSAKU ,  RESTAINO DARRYL D ,  NOGAMI TAKESHI

IPC: H01L21/31

CPC classification number: H01L21/7682 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/3122 ,  H01L21/31633 ,  H01L2221/1047

Abstract: A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter "SiCOH") in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, -CH 2 - crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH 3 +CH 2 stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH 3 bonding of greater than about 2.0, and a peak area for Si-O-Si bonding of greater than about 60%, and a porosity of greater than about 20%.

Abstract translation: 在介电常数小于约3.0的共价键合的三维网络结构中，包含Si，C，O和H原子（以下称为“SiCOH”）的多孔低k或超低k电介质膜，结晶度更高 键合相互作用，提供比现有技术的SiCOH电介质更多的碳作为甲基端基和更少的亚甲基-CH 2 - 2交联基团。 SiCOH电介质的特征在于具有小于约1.40的CH 3 N 2 CH 2拉伸峰面积的FTIR光谱，SiH拉伸的峰面积小于 约0.20，SiCH 3键的峰面积大于约2.0，Si-O-Si键合的峰面积大于约60％，孔隙率大于约20％ 。

公开(公告)号：WO2011139417A3

公开(公告)日：2012-01-05

申请号：PCT/US2011029127

申请日：2011-03-21

Applicant: IBM ,  HORAK DAVID V ,  NOGAMI TAKESHI ,  PONOTH SHOM ,  YANG CHIH-CHAO

Inventor： HORAK DAVID V ,  NOGAMI TAKESHI ,  PONOTH SHOM ,  YANG CHIH-CHAO

IPC: H01L23/48

CPC classification number: H01L23/53238 ,  H01L21/76805 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Interconnect structures having self-aligned dielectric caps are provided. At least one metallization level is formed on a substrate. A dielectric cap is selectively deposited on the metallization level.

Abstract translation: 提供具有自对准电介质盖的互连结构。 在基板上形成至少一个金属化层。 电介质盖被选择性地沉积在金属化层上。

公开(公告)号：GB2485689A

公开(公告)日：2012-05-23

申请号：GB201200519

申请日：2010-08-25

Applicant: IBM

Inventor： ROSSNAGEL STEPHEN ,  YANG CHIH-CHAO ,  EDELSTEIN DANIEL ,  NOGAMI TAKESHI

IPC: H01L21/768

Abstract: An interconnect structure having reduced electrical resistance and a method of forming such an interconnect structure are provided. The interconnect structure includes a dielectric material (24) including at least one opening therein. The at least one opening is filled with an optional barrier diffusion layer (30), a grain growth promotion layer (32), an agglomerated plating seed layer (34'), an optional second plating seed layer a conductive structure (38). The conductive structure which includes a metal-containing conductive material, typically Cu, has a bamboo microstructure and an average grain size of larger than 0.05 microns. In some embodiments, the conductive structure includes conductive grains that have a (111) crystal orientation.

公开(公告)号：GB2508749A

公开(公告)日：2014-06-11

申请号：GB201403444

申请日：2012-07-18

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  NOGAMI TAKESHI ,  GAMBINO JEFFREY P ,  HUANG QIANG ,  RODBELL KENNETH P

IPC: H01L21/768 ,  H01L21/288 ,  H01L23/532

Abstract: A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90nm technologies. Preferably, bamboo grains are separated at distances less than the "Blech" length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.

公开(公告)号：DE112010003659T5

公开(公告)日：2012-10-31

申请号：DE112010003659

申请日：2010-08-25

Applicant: IBM

Inventor： ROSSNAGEL STEPHEN ,  YANG CHIH-CHAO ,  EDELSTEIN DANIEL ,  NOGAMI TAKESHI

IPC: H01L21/768

Abstract: Es werden eine Verbindungsstruktur, die einen verringerten elektrischen Widerstand aufweist, und ein Verfahren zum Bilden einer solchen Verbindungsstruktur bereitgestellt. Die Verbindungsstruktur umfasst ein dielektrisches Material (24), welche mindestens eine darin befindliche Öffnung umfasst. Die mindestens eine Öffnung ist mit einer optionalen Diffusionsbarrierenschicht (30), einer Kornwachstums-Förderungsschicht (32), einer agglomerierten Galvanisierungs-Keimschicht (34'), gegebenenfalls einer zweiten Galvanisierungs-Keimschicht und einer leitfähigen Struktur (38) gefüllt. Die leitfähige Struktur, welche ein metallhaltiges leitfähiges Material, typischerweise Cu, umfasst, weist eine Bambus-Mikrostruktur und eine mittlere Korngröße von mehr als 0,05 Mikrometern auf. In einigen Ausführungsformen umfasst die leitfähige Struktur leitfähige Körner, welche eine (111)-Kristallorientierung aufweisen.

公开(公告)号：DE112012003823T5

公开(公告)日：2014-08-07

申请号：DE112012003823

申请日：2012-07-18

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  NOGAMI TAKESHI ,  GAMBINO JEFFREY P ,  HUANG QIANG ,  RODBELL KENNETH P

IPC: H01L21/28

Abstract: Eine Metallverbindungsstruktur und ein Verfahren zur Herstellung der Metallverbindungsstruktur. Mangan (Mn) wird in eine Kupfer(Cu)-Verbindungsstruktur eingebaut, um die Mikrostruktur zu modifizieren, um Bambusstil-Korngrenzen in Sub-90-nm-Technologien zu erreichen. Vorzugsweise sind die Bambuskörner durch Abstände von weniger als der „Blech”-Länge getrennt, so dass eine Kupfer(Cu)-Diffusion durch Korngrenzen vermieden wird. Das hinzugefügte Mn löst auch das Wachstum von Cu-Körnern herunter bis zu der unteren Fläche der Metallleitung aus, so dass eine echte Bambusmikrostruktur gebildet wird, welche bis zu der unteren Fläche reicht, und der Cu-Diffusionsmechanismus entlang Korngrenzen, die entlang der Länge der Metallleitung orientiert sind, eliminiert wird.

公开(公告)号：GB2485689B

公开(公告)日：2013-06-12

申请号：GB201200519

申请日：2010-08-25

Applicant: IBM

Inventor： ROSSNAGEL STEPHEN ,  YANG CHIH-CHAO ,  EDELSTEIN DANIEL ,  NOGAMI TAKESHI

IPC: H01L21/768

公开(公告)号：GB2508749B

公开(公告)日：2015-12-02

申请号：GB201403444

申请日：2012-07-18

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  NOGAMI TAKESHI ,  GAMBINO JEFFREY P ,  HUANG QIANG ,  RODBELL KENNETH P

IPC: H01L21/768 ,  H01L21/288 ,  H01L23/532

Abstract: A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.