公开(公告)号：EP1658639A4

公开(公告)日：2009-09-30

申请号：EP04777467

申请日：2004-07-01

Applicant: IBM

Inventor： KHATER MARWAN H ,  DUNN JAMES S ,  HARAME DAVID L ,  JOSEPH ALVIN J ,  LIU QIZHI ,  PAGETTE FRANCOIS ,  ST ONGE STEPHEN A ,  STRICKER ANDREAS D

IPC: H01L29/732 ,  H01L21/331 ,  H01L29/10 ,  H01L29/737

CPC classification number: H01L29/66287 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

公开(公告)号：EP1815517A4

公开(公告)日：2009-08-05

申请号：EP05820748

申请日：2005-11-10

Applicant: IBM

Inventor： KHATER MARWAN H ,  PAGETTE FRANCOIS

IPC: H01L27/082 ,  H01L21/331

CPC classification number: H01L29/66287 ,  H01L29/1004 ,  H01L29/66272 ,  H01L29/732

Abstract: Disclosed is a bipolar transistor and a method of forming the transistor, where the transistor includes a collector (12) in a substrate (10), an intrinsic base (14) above the collector, an extrinsic base adjacent the intrinsic base, and an emitter (130) above the intrinsic base. The extrinsic base includes extrinsic base implant regions (82, 172, 192) adjacent the intrinsic base, when viewed in cross-section. The transistor is formed by patterning an emitter pedestal (50) for the lower portion of the emitter on the substrate above the intrinsic base. The extrinsic base is formed in regions not protected by the emitter pedestal. Subsequently, the emitter, associated spacers (180) and a silicide region (220) are formed. The silicide, extrinsic base and emitter are all self-aligned with each other.

公开(公告)号：JP2005026689A

公开(公告)日：2005-01-27

申请号：JP2004192192

申请日：2004-06-29

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GREGORY G FREEMAN ,  KHATER MARWAN H ,  PAGETTE FRANCOIS

IPC: H01L29/737 ,  H01L21/331 ,  H01L21/8222 ,  H01L29/10 ,  H01L29/732

CPC classification number: H01L29/66287 ,  H01L29/1004 ,  H01L29/732

Abstract: PROBLEM TO BE SOLVED: To provide a self-adjusting bipolar transistor structure having a projecting exogenous base provided with external and internal regions with different dope densities, and to provide its manufacturing method.
SOLUTION: The first material of a first dope density is provided so that an exogenous base external region is formed. Then, a first opening is formed in the first material's layer by lithography into which a dummy emitter pedestal is formed, and by which a trench is formed between a side wall of the first opening and the dummy pedestal. Thereafter, the second material of a second dope density is provided within this trench, and another exogenous base internal extension region is formed whose projecting external base marginal part self-adjusts to a dummy pedestal marginal part. Since the emitter is formed where there were the dummy pedestals, this exogenous base also self-adjusts to the emitter.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有突出的外源基底的自调节双极晶体管结构，其具有不同的浓度密度的外部和内部区域，并提供其制造方法。 解决方案：提供第一浓度密度的第一种材料，以便形成外源基底外部区域。 然后，通过光刻法在第一材料层中形成第一开口，在其中形成有虚拟发射极基座，并且在第一开口的侧壁和虚拟基座之间形成有沟槽。 此后，在该沟槽内设置第二掺杂浓度的第二材料，并且形成另外的外源基底内部延伸区域，其突出的外部基部边缘部分自调整到虚拟基座边缘部分。 由于发射器形成在具有虚拟基座的位置，所以这种外部基极也自发地调节到发射极。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：WO2005024900A3

公开(公告)日：2005-06-09

申请号：PCT/US2004021345

申请日：2004-07-01

Applicant: IBM ,  KHATER MARWAN H ,  DUNN JAMES S ,  HARAME DAVID L ,  JOSEPH ALVIN J ,  LIU QIZHI ,  PAGETTE FRANCOIS ,  ST ONGE STEPHEN A ,  STRICKER ANDREAS D

Inventor： KHATER MARWAN H ,  DUNN JAMES S ,  HARAME DAVID L ,  JOSEPH ALVIN J ,  LIU QIZHI ,  PAGETTE FRANCOIS ,  ST ONGE STEPHEN A ,  STRICKER ANDREAS D

IPC: H01L21/331 ,  H01L29/10 ,  H01L29/732 ,  H01L29/737 ,  H01L23/62

CPC classification number: H01L29/66287 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

Abstract: A bipolar transistor with raised extrinsic base and selectable self-alignment between the extrinsic base and the emitter (106) is disclosed. The fabrication method may include the formation of a predefined thickness of a first extrinsic base layer (102) of polysilicon or silicon on an intrinsic base (108). A dielectric landing pad (128) is then formed by lithography on the first extrinsic base layer (102). Next, a second extrinsic base layer (104) of polysilicon or silicon is formed on top of the dielectric landing pad (128) to finalize the raised extrinsic base total thickness. An emitter (106) opening is formed using lithography and RIE, where the second extrinsic base layer (104) is etched stopping on the dielectric landing pad (128). The degree of self-alignment between the emitter (106) and the raised extrinsic base is achieved by selecting the first extrinsic base layer (102) thickness, the dielectric landing pad (128) width, and the spacer width.

Abstract translation: 公开了一种具有凸起的非本征基极和在本征基极和发射极（106）之间的可选自对准的双极晶体管。 制造方法可以包括在内在基极（108）上形成多晶硅或硅的第一非本征基极层（102）的预定厚度。 然后通过光刻在第一非本征基极层（102）上形成电介质着色焊盘（128）。 接下来，在电介质着色焊盘（128）的顶部上形成多晶硅或硅的第二非本征基极层（104），以最终确定凸出的非本征基本总厚度。 使用光刻和RIE形成发射器（106）开口，其中第二外部基极层（104）被蚀刻停止在电介质着色焊盘（128）上。 通过选择第一非本征基极层（102）的厚度，电介质着陆焊盘（128）的宽度和间隔物宽度来实现发射极（106）和凸起的外在基极之间的自对准程度。