公开(公告)号：EP2020023A4

公开(公告)日：2012-09-19

申请号：EP07761307

申请日：2007-04-26

Applicant: IBM

Inventor： FAROOQ MUKTA G ,  DAUBENSPECK TIMOTHY H ,  SAUTER WOLFGANG ,  GAMBINO JEFFREY P ,  MUZZY CHRISTOPHER D ,  PETRARCA KEVIN S

IPC: H01L21/44

CPC classification number: H01L24/03 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/034 ,  H01L2224/03616 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05018 ,  H01L2224/05027 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05546 ,  H01L2224/05559 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05671 ,  H01L2224/113 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11902 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/00015 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A method for forming preferably Pb-lead C4 connections or capture pads with ball limiting metallization on an integrated circuit chip by using a damascene process and preferably Cu metallization in the chip and in the ball limiting metallization for compatibility. In two one embodiment, the capture pad is formed in the top insulating layer and it also serves as the final level of metallization in the chip.

公开(公告)号：JP2010157703A

公开(公告)日：2010-07-15

申请号：JP2009271304

申请日：2009-11-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  GAMBINO JEFFREY P ,  SAUTER WOLFGANG ,  MUZZY CHRISTOPHER DAVID ,  SULLIVAN TIMOTHY DOOLING

IPC: H01L21/60

CPC classification number: H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05088 ,  H01L2224/05096 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/05671 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/16238 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

Abstract: PROBLEM TO BE SOLVED: To provide structures with improved solder bump connections that prevent cracking and peeling, and to provide a method of fabricating such structures.
SOLUTION: The method includes steps of: forming an upper wiring layer in dielectric layers 10, 20 and 22; and depositing one or more dielectric layers on the upper wiring layer. The method further includes a step of forming a plurality of discrete trenches in the one or more dielectric layers extending to the upper wiring layer. The method further includes a step of depositing a ball limiting metallurgy or under bump metallurgy in the plurality of discrete trenches to form discrete metal islands in contact with the upper wring layer. A solder bump is formed in electrical connection to the plurality of the discrete metal islands.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供具有改善的防止开裂和剥离的焊料凸块连接的结构，并提供制造这种结构的方法。 解决方案：该方法包括以下步骤：在电介质层10,20和22中形成上布线层; 以及在所述上布线层上沉积一个或多个介电层。 该方法还包括在延伸到上布线层的一个或多个介电层中形成多个离散沟槽的步骤。 该方法还包括在多个离散的沟槽中沉积限界金属冶金或凸块下的冶金以形成与上部绞合层接触的离散的金属岛的步骤。 形成与多个离散金属岛电连接的焊料凸块。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010251754A

公开(公告)日：2010-11-04

申请号：JP2010091384

申请日：2010-04-12

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  SULLIVAN TIMOTHY DOOLING ,  WRIGHT STEVEN LORENZ ,  SAUTER WOLFGANG ,  SPROGIS EDMUND JURIS

IPC: H01L21/3205 ,  H01L21/60 ,  H01L23/52

CPC classification number: H01L24/03 ,  H01L23/5226 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05022 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/11334 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/05552

Abstract: PROBLEM TO BE SOLVED: To provide a metal wiring structure for a uniform current density in a C4 ball. SOLUTION: A sub-pad assembly of a metal structure is arranged directly underneath a metal pad. The sub-pad assembly includes an upper level metal line structure that comes into contact with the metal pad and a set of metal vias that provide electrical connection between the upper level metal line structure and a lower level metal line structure arranged underneath of the upper level metal line structure. The reliability of a C4 ball is improved by using a metal pad structure having a set of integrated metal vias that are divided and distributed to promote an uniform current density distribution in the C4 ball. The areal density of the cross-sectional area of the plurality of metal vias is higher at the center part of the metal pad than at the peripheral edge part of the flat part of the metal pad. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在C4球中具有均匀电流密度的金属布线结构。

解决方案：金属结构的子焊盘组件直接布置在金属焊盘下方。 子焊盘组件包括与金属焊盘接触的上层金属线结构和一组金属通孔，其在上层金属线结构和布置在上层下方的下层金属线结构之间提供电连接 金属线结构。 通过使用具有一组集成金属通孔的金属焊盘结构，C4球的可靠性得到改善，该金属焊盘结构被分割和分配以促进C4球中均匀的电流密度分布。 金属焊盘的中心部分的金属通孔的横截面积的面密度比在金属焊盘的平坦部分的周缘部分高。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2005094013A

公开(公告)日：2005-04-07

申请号：JP2004269142

申请日：2004-09-16

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： BIGGS JULIE C ,  CHENG TIEN-JEN ,  EICHSTADT DAVID E ,  FANTI LISA A ,  GRIFFITH JONATHAN H ,  KNARR RANDOLPH F ,  KNICKERBOCKER SARAH H ,  PETRARCA KEVIN S ,  QUON ROGER A ,  SAUTER WOLFGANG ,  SRIVASTAVA KAMALESH K ,  VOLANT RICHARD P

IPC: H01L21/60 ,  H01L23/485

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05181 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/45144 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/85205 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a wire bond in an I/C chip. SOLUTION: This method comprises steps of: providing an I/C chip having a conductive pad for wire bonding and at least one dielectric material layer on the pad; forming an opening penetrating the dielectric material layer to expose a part of said pad; forming at least a first conductive layer on the exposed surface of the pad and on the surface of the opening; forming a seed layer on the first conductive layer, applying photoresist onto the seed layer; exposing the photoresist to light and developing the light-exposed photoresist; exposing the surface of the seed layer surrounding the opening; removing the exposed seed layer; removing the photoresist material inside the opening to expose the seed layer; coating at least one second conductive material layer on the seed layer inside the opening; and removing the first conductive layer on the dielectric layer around the opening. The present invention includes the structure obtained by the above method. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供在I / C芯片中形成引线键合的方法。 解决方案：该方法包括以下步骤：提供具有用于引线接合的导电焊盘和衬垫上的至少一个电介质材料层的I / C芯片; 形成贯穿所述电介质材料层的开口以露出所述垫的一部分; 在所述垫的暴露表面和所述开口的表面上形成至少第一导电层; 在所述第一导电层上形成种子层，将光致抗蚀剂施加到种子层上; 将光致抗蚀剂曝光并显影曝光的光致抗蚀剂; 暴露围绕开口的种子层的表面; 去除暴露的种子层; 去除开口内的光致抗蚀剂材料以暴露种子层; 在开口内的种子层上涂覆至少一个第二导电材料层; 以及去除围绕开口的电介质层上的第一导电层。 本发明包括通过上述方法获得的结构。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2011023719A

公开(公告)日：2011-02-03

申请号：JP2010157590

申请日：2010-07-12

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  GAMBINO JEFFREY P ,  SAUTER WOLFGANG ,  MUZZY CHRISTOPHER DAVID ,  QUESTAD DAVID L ,  SULLIVAN TIMOTHY DOOLING ,  PAUL FORTIER

IPC: H01L21/60

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/03005 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05016 ,  H01L2224/05019 ,  H01L2224/05027 ,  H01L2224/05552 ,  H01L2224/05563 ,  H01L2224/05572 ,  H01L2224/10126 ,  H01L2224/1147 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: PROBLEM TO BE SOLVED: To provide a structure of a control collapse chip connection (C4) and its manufacturing method, and particularly, a structure to improve reliability of lead-free C4 interconnection and its method. SOLUTION: The structure includes a ball limited metalization (BLM) layer and a solder ball of control collapse chip connection (C4) formed on the BLM layer. Moreover, the structure includes the final metal pad layer under the BLM layer and a cap layer under the final metal pad layer. Then the structure includes an air gap between the final metal pad layer and one of the BLM layer and cap layer under the C4 solder ball. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供控制崩溃芯片连接（C4）的结构及其制造方法，特别是提高无铅C4互连的可靠性的结构及其方法。 解决方案：该结构包括在BLM层上形成的球限制金属化（BLM）层和控制崩溃芯片连接（C4）的焊球。 此外，该结构包括在BLM层下面的最终金属焊盘层和在最终金属焊盘层下面的覆盖层。 然后，该结构在最终金属焊盘层与C4焊球之下的BLM层和盖层之一之间包括气隙。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010157698A

公开(公告)日：2010-07-15

申请号：JP2009267454

申请日：2009-11-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GAMBINO JEFFREY P ,  DAUBENSPECK TIMOTHY HARRISON ,  SULLIVAN TIMOTHY DOOLING ,  SAUTER WOLFGANG ,  MUZZY CHRISTOPHER DAVID

IPC: H01L21/60 ,  H01L21/3205 ,  H01L23/52

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05011 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05557 ,  H01L2224/05644 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00013 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/0103 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

Abstract: PROBLEM TO BE SOLVED: To provide structures with improved solder bump connections and methods of fabricating such structures. SOLUTION: Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The structure includes a via formed in a dielectric layer to expose a contact pad and a capture pad formed in the via and over the dielectric layer. The capture pad has openings over the dielectric layer to form segmented features. The solder bump is deposited on the capture pad and the openings over the dielectric layer. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供具有改进的焊料凸块连接的结构和制造这种结构的方法。 解决方案：本文提供了具有改善的焊料凸点连接的结构和制造这种结构的方法。 该结构包括在电介质层中形成的通孔，以露出形成在通孔中和电介质层上的接触焊盘和捕获焊盘。 捕获垫在电介质层上具有开口以形成分段特征。 焊料凸块沉积在捕获垫上并且在介电层上沉积开口。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：WO2007127816A2

公开(公告)日：2007-11-08

申请号：PCT/US2007067449

申请日：2007-04-26

Applicant: IBM ,  FAROOQ MUKTA G ,  DAUBENSPECK TIMOTHY H ,  SAUTER WOLFGANG ,  GAMBINO JEFFREY P ,  MUZZY CHRISTOPHER D ,  PETRARCA KEVIN S

Inventor： FAROOQ MUKTA G ,  DAUBENSPECK TIMOTHY H ,  SAUTER WOLFGANG ,  GAMBINO JEFFREY P ,  MUZZY CHRISTOPHER D ,  PETRARCA KEVIN S

IPC: H01L23/48 ,  H01L21/44

CPC classification number: H01L24/03 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/034 ,  H01L2224/03616 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05018 ,  H01L2224/05027 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05546 ,  H01L2224/05559 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05671 ,  H01L2224/113 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11902 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/00015 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A method for forming preferably Pb-lead C4 connections or capture pads 37 with ball limiting metallization on an integrated circuit chip 30 by using a damascene process and preferably Cu metallization 32 in the chip 30 and in the ball limiting metallization for compatibility. In two one embodiment, the capture pad 52 is formed in the top insulating layer 51 and it also serves as the final level of metallization in the chip.

Abstract translation: 一种用于在集成电路芯片30上通过使用镶嵌工艺，优选在芯片30中的铜金属化层32以及用于兼容性的球限制金属化中，优选地形成具有球限制金属化的Pb-铅C4连接或俘获垫37的方法。 在两个实施例中，捕获垫52形成在顶部绝缘层51中，并且还用作芯片中的最终金属化水平。

公开(公告)号：WO2008100923A3

公开(公告)日：2008-11-06

申请号：PCT/US2008053703

申请日：2008-02-12

Applicant: IBM ,  DAUBENSPECK TIMOTHY H ,  GAMBINO JEFFREY P ,  MUZZY CHRISTOPHER D ,  SAUTER WOLFGANG

Inventor： DAUBENSPECK TIMOTHY H ,  GAMBINO JEFFREY P ,  MUZZY CHRISTOPHER D ,  SAUTER WOLFGANG

IPC: B23K31/02 ,  H01L29/12

CPC classification number: H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03462 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/0501 ,  H01L2224/05083 ,  H01L2224/05546 ,  H01L2224/05624 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/11902 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/00014 ,  H01L2224/13099

Abstract: A system and method for eliminating undercut when forming a C4 solder bump for BLM (Ball Limiting Metallurgy) and improving the C4 pitch. In the process, a barrier layer metal stack (20') is deposited above a metal pad layer (19'). A top layer (22') of the barrier layer metals (e.g., Cu) is patterned by CMP with a bottom conductive layer (21 ') of the barrier metal stack (20') removed by etching. The diffusion barrier (40) and C4 solder bump (50) may be formed by electroless plating, in one embodiment, using a maskless technique, or by an electroplating techniques using a patterned mask. This allows the pitch of the C4 solder bumps to be reduced.

Abstract translation: 一种用于在形成用于BLM（限流冶金）的C4焊料凸块并提高C4间距时消除底切的系统和方法。 在该过程中，在金属垫层（19'）上方沉积阻挡层金属叠层（20'）。 通过CMP对阻挡层金属（例如Cu）的顶层（22'）进行图案化，通过蚀刻去除阻挡金属叠层（20'）的底部导电层（21'）。 扩散阻挡层（40）和C4焊料凸块（50）可以通过化学镀，在一个实施例中使用无掩模技术，或通过使用图案化掩模的电镀技术形成。 这样可以减少C4焊料凸点的间距。

公开(公告)号：WO2007146757A3

公开(公告)日：2008-03-20

申请号：PCT/US2007070661

申请日：2007-06-08

Applicant: IBM ,  DAUBENSPECK TIMOTHY H ,  GAMBINO JEFFREY P ,  MUZZY CHRISTOPHER D ,  SAUTER WOLFGANG

Inventor： DAUBENSPECK TIMOTHY H ,  GAMBINO JEFFREY P ,  MUZZY CHRISTOPHER D ,  SAUTER WOLFGANG

IPC: H01L21/44

CPC classification number: H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13006 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00

Abstract: In a first aspect, a method comprises depositing a first metal containing layer (16) into a trench structure, which contacts a metalized area (12) of a semiconductor structure (10). The method further includes patterning at least one opening in a resist to the first metal containing layer (16). The opening should be in alignment with the trench structure. At least a pad metal containing layer (20) is formed within the at least one opening (preferably by electroplating processes). The resist (18) and the first metal layer (16) underlying the resist (18) are then etched (with the second metal layer (20) acting as a mask, in embodiments). The method includes flowing solder material (22) within the trench and on pad metal containing layer (20) after the etching process. The structure is a controlled collapse chip connection (C4) structure comprising at least one electroplated metal layer formed in a resist pattern to form at least one ball limiting metallurgical layer. The structure further includes an underlying metal layer devoid of undercuts.

Abstract translation: 在第一方面，一种方法包括将第一含金属层（16）沉积到与半导体结构（10）的金属化区域（12）接触的沟槽结构中。 该方法还包括将抗蚀剂中的至少一个开口构图到第一含金属层（16）。 开口应与沟槽结构对齐。 在至少一个开口内（优选地，通过电镀工艺）形成至少一块垫金属层（20）。 然后在实施例中蚀刻抗蚀剂（18）和抗蚀剂（18）下面的第一金属层（16）（第二金属层（20）用作掩模）。 该方法包括在蚀刻工艺之后使沟槽内的焊料材料（22）和衬垫金属含有层（20）流动。 该结构是受控的崩溃芯片连接（C4）结构，包括至少一个以抗蚀剂图形形成的电镀金属层，以形成至少一个球限制冶金层。 该结构还包括没有底切的底层金属层。

公开(公告)号：DE602007010978D1

公开(公告)日：2011-01-13

申请号：DE602007010978

申请日：2007-10-31

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY HARRISON ,  MUZZY CHRISTOPHER DAVID ,  GAMBINO JEFFREY PETER ,  SAUTER WOLFGANG

IPC: H01L23/31 ,  H01L23/485