公开(公告)号：US3530055A

公开(公告)日：1970-09-22

申请号：US3530055D

申请日：1968-08-26

Applicant: IBM

Inventor： MAISSEL LEON I ,  SCHAIBLE PAUL M

IPC: C23C14/00 ,  C23C14/02 ,  C23C14/14 ,  H01J37/34 ,  C23C15/00

CPC classification number: C23C14/024 ,  C23C14/0036 ,  C23C14/14 ,  H01J37/34

公开(公告)号：FR2312114A1

公开(公告)日：1976-12-17

申请号：FR7610361

申请日：1976-04-01

Applicant: IBM

Inventor： HARVILCHUCK JOSEPH M ,  LOGAN JOSEPH S ,  METZGER WILLIAM C ,  SCHAIBLE PAUL M ,  RISEMAN JACOB ,  SCHWARTZ GERALDINE C

IPC: C23F4/00 ,  H01L21/3065 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/72

Abstract: In the selective removal of metal and/or semiconductor materials by reactive ion etching using a photoresist or dielectric film, e.g. SiO2, Si3H4 or Al2O3 as mask, the improvement comprises subjecting the substrate to be treated to cathodic sputtering under the action of a plasma or an atmos. under preliminary vacuum conditions, consisting of CCl4, HCl, Cl2, CBr4, HBr, Br2, CI4, I2, mixts. and cpds. of these, without addn. of F2 and F cpds. Method is used in the prodn. of monolithic semiconductor circuits. A relatively high etching rate is obtd. without undercutting.

公开(公告)号：DE3277755D1

公开(公告)日：1988-01-07

申请号：DE3277755

申请日：1982-12-20

Applicant: IBM

Inventor： PLATTER VALERIA ,  ROTHMAN LAURA B ,  SCHAIBLE PAUL M ,  SCHWARTZ GERALDINE C

IPC: H01L21/3205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/48 ,  H01L21/768 ,  H01L23/498 ,  H01L23/532 ,  H05K3/46 ,  H01L21/90 ,  H01L23/52

Abstract: Coplanar conductor/insulator films with at least one level of metallization are produced by forming on a substrate a conductive pattern (5A, 6A) of a composite consisting of a lower layer (5A) of an aluminum based metal and an upper layer (6A) of hafnium with a coating (7A) of magnesium oxide covering its top surface, blanket depositing a layer of dielectic material whose thickness equals that of the conductive pattern, and wet etching said coating (7) of magnesium oxide for removal thereof together with the overlying portions of said dielectric coating thereon. … To produce structures with interconnected, coplanar conductor/insulator films on different levels the above process steps are repeated once or several times. … The hatnium layer is used to protect the aluminum based metal during the removal of the magnesium oxide, and as a registration enhancer for subsequent electron-beam processing.

公开(公告)号：CA1161787A

公开(公告)日：1984-02-07

申请号：CA389000

申请日：1981-10-29

Applicant: IBM

Inventor： SCHAIBLE PAUL M ,  SCHWARTZ GERALDINE C

IPC: H01L21/302 ,  C23F1/00 ,  C23F4/00 ,  H01L21/3065 ,  H05K3/06 ,  H05K3/38 ,  B23P1/00 ,  C23C15/00

Abstract: Dry Etching of Copper Patterns The use of a molybdenum diffusion barrier between a copper layer and a magnesium oxide dry etch mask to obtain and insure adhesion between the two. FI9-80-023

公开(公告)号：CA1245517A

公开(公告)日：1988-11-29

申请号：CA509373

申请日：1986-05-16

Applicant: IBM

Inventor： BEYER KLAUS D ,  GUTHRIE WILLIAM L ,  MAKAREWICZ STANLEY R ,  MENDEL ERIC ,  PATRICK WILLIAM J ,  PERRY KATHLEEN A ,  PLISKIN WILLIAM A ,  RISEMAN JACOB ,  SCHAIBLE PAUL M ,  STANDLEY CHARLES L

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/306

Abstract: A method is disclosed for producing coplanar metal/insulator films on a substrate according to a chem-mech polishing technique. In one example, a substrate having a patterned insulating layer of dielectric material thereon, is coated with a layer of metal. The substrate is then placed in a parallel polisher and the metal is removed elsewhere except in the holes where it is left intact. This is made possible through the use of an improved selective slurry which removes the metal much faster than the dielectric material. The insulating layer may then be used as an automatic etch stop barrier. In a second example a substrate having a paterned metallic layer is coated with an insulating layer and then subjected to chem-mech polishing. The structure is coplanarized by the chem-mech removal of the insulating material from the high points of the structure at a faster rate than from the lower points. Optional etch stop layers also may be used.

公开(公告)号：CA734913A

公开(公告)日：1966-05-24

申请号：CA734913D

Applicant: IBM

Inventor： MAISSEL LEON I ,  SCHAIBLE PAUL M