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    3.
    发明专利
    未知

    公开(公告)号：DE19962534B4

    公开(公告)日：2004-01-29

    申请号：DE19962534

    申请日：1999-12-23

    Applicant: IBM ,  RAINBOW DISPLAYS INC

    Inventor： MIWA KOICHO ,  NOGUCHI MICHIKAZU ,  SUZUKI SHUNJI ,  LEE HO CHONG ,  SERAPHIM DONALD PHILIP ,  SKINNER DEAN WILLIAM

    IPC: G02F1/13 ,  G02F1/1339

    Abstract: A method for applying the sealing material onto the corner regions of the substrate to realize the liquid crystal cell with large display region. A protrude region 100 is formed on each of the side regions adjacent to a display region of a first substrate 20. A difference of level is formed at each boundary of the side region and the corner region on one surface of the first substrate 20 for providing the corner region with a height which is lower than a height of the side region. A sealing material 30 is applied on the side regions and the corner regions on the one surface of the first substrate 20 by a tool for dispensing the sealing material 30. When a second substrate 10 is positioned on the applied sealing material 30 on one surface of the first substrate 20, a distance between the first substrate 20 and the second substrate 10 is decreased and the sealing material 30 applied on the first substrate 20 is collapsed.

    5.
    发明专利
    未知

    公开(公告)号：DE1256995B

    公开(公告)日：1967-12-21

    申请号：DEJ0026538

    申请日：1964-09-11

    Applicant: IBM

    Inventor： CHIOU CHARLES ,  COUNTY WESTCHESTER ,  CONNELL RICHARD ALLEN ,  MISSION SHAWNEE ,  COUNTY JOHNSON ,  SERAPHIM DONALD PHILIP

    IPC: C23C14/14 ,  C23C14/58 ,  G11C11/44 ,  H01L39/00

    Abstract: A superconductive memory element is made by vacuum depositing a film which is a mixture of germanium and a superconductor on an insulating substrate and then annealing the film to concentrate the germanium into particles within the film. The film preferably consists of 5-40% by weight of germanium and the residue tin or indium, and is 800-2000ALPHA thick. Annealing is effected at 110 DEG C. for 42 hours in vacuo. The germanium and tin or indium may be deposited simultaneously from separate boats or from a mixture in a common boat. In the latter case the mixture is heated slowly to a temperature below the evaporating temperature of either metal and then quickly raised to a temperature above the evaporating temperature of both. Suitable materials for the substrate are glass, mica and resin.

    6.
    发明专利
    未知

    公开(公告)号：DE1227946B

    公开(公告)日：1966-11-03

    申请号：DEJ0024477

    申请日：1963-09-26

    Applicant: IBM

    Inventor： CONNELL RICHARD ALLEN ,  HORWITZ LAWRENCE PAUL ,  QUINN DANIEL JOHN ,  SERAPHIM DONALD PHILIP

    IPC: G11C11/44

    Abstract: 1,004,963. Superconductive devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. July 30, 1963 [July 30, 1962; Oct. 5, 1962], No. 30057/63. Heading H1K. [Also in Division H3] A superconductive arrangement comprises a hollow cylindrical member of superconducting material in which a quantised amount of magnetic flux is trapped by switching the member from the resistive to the superconducting state while it is threaded by an applied magnetic field, and means for directly sensing the amount of trapped flux or means for continuously raising the resultant magnetic field within the cylinder until it exceeds the critical field, thereby successively releasing quanta of trapped flux to produce current pulses in a sensing element which are counted to determine the total amount of flux trapped. An arrangement suitable for use in the latter manner, produced by thin film deposition techniques, is shown in Fig. 6. Along the axis of the cylindrical indium member 42 11 runs a copper strip 41 11 used as readout conductor. The sensing conductor is constituted by a layer 44 11 connected at both ends to superconductive shield 69 to form a coil which includes a neck portion 5111 forming the control conductor of a cryotron the gate of which is designated 56 11 . Operation is as follows: a magnetic flux parallel to the cylinder axis is established by passing current through member 55 while the cylinder is held resistive by means of a resultant field greater than the critical field. This may be the vector resultant of the field of member 55 and an auxiliary field generated either by current along conductor 4111 or by current along the cylinder itself. The auxiliary field is then cut off to render the cylinder superconducting whereupon a reaction current is generated in the cylinder sufficient to bring the flux within the cylinder parallel to the axis to an allowed quantised value. The external field is then removed whereupon the reaction current changes sufficiently to maintain the total flux at the quantised value. This flux may be read out by passing a current increasing as a ramp function axially along conductor 41 or cylinder 42. In either case the vectorial sun of the field thus generated and the quantised flux field increases until it exceeds the critical field. The cylinder then goes momentarily resistive and releases a quantum of stored flux to produce a current pulse in coil 44 1 sufficient to drive the cryotron gate resistive. When the quantum has been released the cylinder reverts to the superconductive state until the vectorial sum of the fields again exceeds the critical field, when a further pulse is produced, and so on. The pulses are counted to determine the amount of flux stored. A similar arrangement with a field coil replacing conductor 55 is also described (Fig. 5, not shown). In another arrangement (Fig. 4A, not shown) which lacks the built-in cryotron the pulses in the sensing coil are either counted using a cryogenic ring circuit or amplified and displayed on a cathode ray tube. The amplitude of the pulse increases and its width decreases as the number of quanta still stored increases and when a larger number of quanta is stored the time delay in switching from the superconducting to resistive state and back is such that several quanta are released simultaneously. A device enabling non-destructive readout, shown in Fig. 7 is maintained at a temperature such that under zero field conditions all the elements shown are with superconducting state. The device is connected in the circuit shown in Fig. 8. In this case quantised flux is trapped in tin cylinder 110 by holding it resistive by current in lead 115 while subjected to field generated by current in leads 113, 114, which are as broad as the cylinder is long and then terminating the current in lead 115. Since the critical current in indium conductor 112 is now dependent on the amount of flux trapped the latter may be sensed by increasing the current supplied to it as a ramp function. This current supplied by 151 divides between conductor 112 and a parallel lead including inductor 156 and one or more cryotron control elements 154. Initially as both paths are superconducting the greater inductance of the parallel path shows the rise of current therein but when the critical current is reached the current in conductor 112 stays substantially constant and the current through the cryotron control element begins to rise. At a certain point it drives the gate resistive, a condition which is sensed by periodic pulses from a strobe 63. The time elapsing before this happens is determined by the amount of stored flux. Several cryotron control conductors associated with differently biased gates may be placed in series in line 153. In this case the arrangement may be such that at the end of readout the number of gates in the resistive state corresponds to the number of quanta stored. A method of making a device constructionally similar to that of Fig. 5 by vapour deposition techniques is described. Dimensions of all the devices referred to above are given in the Specification. Specification 990,288 is referred to.

    8.
    发明专利
    未知

    公开(公告)号：DE1123367B

    公开(公告)日：1962-02-08

    申请号：DEJ0018503

    申请日：1960-07-29

    Applicant: IBM

    Inventor： CONNELL RICHARD ALLEN ,  SERAPHIM DONALD PHILIP

    IPC: G11C11/44 ,  H01L39/10

    Abstract: 924,170. Superconductive circuits. INTER. NATIONAL BUSINESS MACHINES COR. PORATION. July 21, 1960 [Nov. 3, 1959], No. 25409/60. Class 40 (9). [Also in Group XXXVI] A superconducting element comprises a piezo-electric body having a pair of electrodes on different faces of the bodies, at least one of the electrodes being of superconducting material. When a potential of one polarity is applied between the electrodes the deformation of the superconducting electrode by the piezo-electric body raises its critical temperature while polarity of opposite potential lowers it. In the arrangement shown in Fig. 3, with switch 27 in its upper position and switch 17 open, no potential is applied across the piezo-electric body between electrodes 12A, 11A. Electrode 11A is superconducting and introduces no resistance in series with source 30 and resistor 31. Voltmeter 33 reads zero. When switch 26 is closed the piezo-electric body deforms electrode 11A becomes resistive and the voltage drop across it is indicated by meter 33. With switch 27 in its lower position the temperature may be so adjusted that electrode 11A is normally resistive, closure of switch 26 (which may be electronic or electromechanical) making it superconductive. Fig. 4 shows a bi-stable circuit, each side of which consists of the superconducting electrode applied to the piezoelectric device 11B, 11C, the gate conductor of one of cryotrons K38, K39, the control conductors of the corresponding cryotron in the other path and the control winding of one of read-out cryotrons K41, K40., Consider that initially the circuit in the state where current flow is through superconducting electrode 11C, gate K39, control K38 and read-out control winding K41. A switch 42 is moved to position X from its centre position N, gate 8C is deformed and becomes resistive so that the current from source 35 is shared with gate 8B. The current in gate conductor K38 rises increasing the control current in K39 while that in gate conductor K39 falls and control K38 falls consequently the circuit changes over gate 8B becomes superconducting and 8C wholly resistive. This state of affairs is indicated by the fact that gate K41 is resistive and K40 superconducting. When switch 42 returns to terminal N, gate 8C is again superconducting, but the current remains in the path through 8B until restored to the other path by putting switch 42 to position Y. In the arrangement of Fig. 5, centre-tapped source 61 applies opposite potentials to gate 8D, 8E to make one superconducting and the other resistive according to the position of switch 62, this state of affairs being indicated by read-out cryotrons K58, K59. The circuit is operated just. below the critical temperature but may be operated well above with magnetic biasing to adjust it to just above. In the oscillator of Fig. 6 the potential developed when superconductive element 11F is resistive is amplified in D.C. amplifier 73 and applied to terminal 12F, making the device deform so that 11F becomes superconductive. The voltage applied to amplifier 73 ceases and the cycle is repeated, the voltage pulses being derived at terminals 74, 75.

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