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    2.
    发明专利
    未知

    公开(公告)号：DE3766031D1

    公开(公告)日：1990-12-13

    申请号：DE3766031

    申请日：1987-07-24

    Applicant: IBM

    Inventor： DAY MELANIE ANN ,  KASCHAK RONALD ANTHONY ,  SCHUBERT STEVEN ASHLEY

    IPC: C23C18/31 ,  C23C18/16 ,  C23C18/40 ,  H05K3/18

    Abstract: Method of controlling the residual resistivity of an electrolessly deposited metal by first, determining the mathematical relationship between the residual resistivity of the deposited metal and its rate of deposition and second, depositing said metal at a rate to produce a predetermined residual resistivity.

    6.
    发明专利
    未知

    公开(公告)号：DE3685241D1

    公开(公告)日：1992-06-17

    申请号：DE3685241

    申请日：1986-02-28

    Applicant: IBM

    Inventor： KASCHAK RONALD ANTHONY ,  MAGNUSON ROY HARVEY ,  YARMCHUK EDWARD JOHN

    IPC: H05K3/18 ,  C23C18/16 ,  C23C18/31 ,  C23C18/40

    Abstract: Method for controlling plating in an electroless plating process. The plating rate is continuously monitored. The plating rate is compared with a set point plating rate. A control voltage is derived proportional to the difference in .plating rate and the desired plating rate, the integral of the difference, and the derivative of the difference. The control voltage is applied to a replenishment control for controlling the replenishment rate of a constituent chemical of the plating process.

    7.
    发明专利
    未知

    公开(公告)号：DE3577731D1

    公开(公告)日：1990-06-21

    申请号：DE3577731

    申请日：1985-02-22

    Applicant: IBM

    Inventor： CHEBINIAK PAUL ,  KASCHAK RONALD ANTHONY ,  ROOT LOIS JEAN

    IPC: C23C18/16 ,  C23C18/18 ,  C23C18/52 ,  H05K3/18 ,  H05K3/22

    Abstract: A metal is deposited onto a substrate from an electroless plating solution by plating an initial layer of metal onto the substrate, then contacting the metal-plated substrate with a solution of an acid; and plating an additional layer of metal onto the plated, acid-treated substrate. The process reduces the plating void defects.

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